SD101B [JINANJINGHENG]

SMALL SIGNAL SCHOTTKY DIODES; 小信号肖特基二极管
SD101B
型号: SD101B
厂家: JINAN JINGHENG (GROUP) CO.,LTD    JINAN JINGHENG (GROUP) CO.,LTD
描述:

SMALL SIGNAL SCHOTTKY DIODES
小信号肖特基二极管

小信号肖特基二极管
文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SD101A THUR SD101C  
SMALL SIGNAL SCHOTTKY DIODES  
S
E M I C O N D U C T O R  
DO-35  
FEATURES  
For general purpose applications  
The SD101 series is a Metal-on-silicon junction Schottky barrier device which  
is protected by a PN junction guard ring. The low forward voltage drop  
and fast switching make it ideal for protection of MOS devices, steering,  
biasing, and coupling diodes for fast switching and low logic level  
applications.  
These diodes are also available in the Mini-MELF case with the type  
designation LL101A to LL101C , in the SOD-123 case type with the type  
designation SD101AW to SW101CW, in the SOD-323 case type with the type  
designation SD101AWS to SW101CWS  
MECHANICAL DATA  
Case: DO-35 glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.05 gram  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS(LIMITING VALUES)  
Value  
Units  
Symbols  
Peak Reverse Voltage  
SD101A  
SD101B  
SD101C  
VRRM  
VRRM  
VRRM  
60  
50  
40  
V
V
mW  
A
400 1)  
Power Dissipation (infinite Heat Sink)  
Maximum Single cycle surge 10ms square wave  
Junction temperature  
Ptot  
IFSM  
TJ  
2.0  
125  
C
Storage Temperature Range  
-55 to+150  
C
TSTG  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 C ambient temperature unless otherwise specified)  
Max.  
Typ.  
Unis  
Symbols  
Min.  
VR  
VR  
VR  
SD101A  
SD101B  
SD101C  
V
V
V
60  
50  
40  
Reverse breakover voltage  
at IR=10mA  
Leakage current at VR=50V  
VR=40V  
VR=30V  
SD101A  
SD101B  
SD101C  
200  
200  
200  
nA  
nA  
nA  
IR  
IR  
IR  
0.41  
0.4  
0.39  
1
0.95  
0.9  
SD101A  
SD101B  
SD101C  
SD101A  
SD101B  
SD101C  
VF  
VF  
VF  
VF  
VF  
VF  
Forward voltage drop at IF=1mA  
V
V
V
V
V
V
IF=15mA  
pF  
pF  
pF  
SD101A  
SD101B  
SD101C  
CJ  
CJ  
CJ  
2.0  
2.1  
2.2  
Junction Capacitance at VR=0V ,f=1MHz  
trr  
1
ns  
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR  
Thermal resistance,junction to Ambient  
RqJA  
300 1)  
K/W  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
2-108  
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096  
WWW.JIFUSEMICON.COM  
JINAN JINGHENG CO., LTD.  
RATINS AND CHARACTERISTICS CURVES SD101A THRU SD101C  
Figure 2. Typical forward conduction curve of  
combination Schottky barrier and PN junction  
guard ring  
Figure 1. Typical variation of fwd.current vs.fwd.  
Voltage for primary conduction through the  
schottky barrier  
mA  
mA  
A
B
A
B
C
C
IF  
IF  
VF  
VF  
Figure 4. Typical capacitance curve as a function  
of reverse voltage  
Figure 3.Typical variation of reverse current  
at various temperatures  
mA  
mA  
C
B
A
IR  
IR  
VR  
VR  
2-109  
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096  
WWW.JIFUSEMICON.COM  
JINAN JINGHENG CO., LTD.  

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