2SD2060_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SD2060_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2060
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1368
·Low collector saturation voltage:
V
CE(SAT)=1.7V(Max) at IC=3A,IB=0.3A
·Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
80
80
V
V
V
A
A
Open base
Open collector
5
4
IB
Base current
0.4
Ta=25℃
TC=25℃
2.0
PC
Collector dissipation
W
25
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2060
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
80
5
TYP.
MAX
UNIT
V
IC=50mA ;IB=0
IE=10mA ;IC=0
IC=3A ;IB=0.3A
IC=3A;VCE=5V
VCB=80V; IE=0
VEB=5V; IC=0
V
0.45
1.0
1.5
1.5
30
V
V
ICBO
μA
μA
IEBO
100
240
hFE-1
DC current gain
IC=0.5A ; VCE=5V
IC=3A ; VCE=5V
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
40
15
hFE-2
DC current gain
50
8.0
90
fT
Transition frequency
MHz
pF
COB
Collector output capacitance
ꢀ hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2060
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic
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