BFG92AX_15 [JMNIC]
NPN 5 GHz wideband transistor;
| 型号： | BFG92AX_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总16页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
book, halfpage
BFG92A/X
NPN 5 GHz wideband transistor
1998 Sep 23
Product specification
Supersedes data of 1995 Sep 12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
FEATURES
DESCRIPTION
• High power gain
• Low noise figure
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
4
3
• Gold metallization ensures
excellent reliability.
PINNING
1
2
APPLICATIONS
PIN
1
DESCRIPTION
collector
Top view
MSB014
Wideband applications in the UHF
and microwave range.
Marking code: V14.
2
emitter
base
3
Fig.1 SOT143B.
4
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
−
−
−
−
−
−
−
−
−
V
15
25
400
−
V
mA
mW
pF
Ptot
Cre
Ts ≤ 60 °C
IC = ic = 0; VCB = 10 V; f = 1 MHz
0.35
5
fT
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
−
GHz
dB
GUM
maximum unilateral power IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
−
16
−
gain
f = 1 GHz
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 2 GHz
−
−
11
2
−
−
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
open base
15
open collector
2
collector current (DC)
total power dissipation
storage temperature range
junction temperature
25
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 60 °C; note 1
400
150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cc
−
−
50
−
nA
IC = 15 mA; VCE = 10 V
40
−
90
0.6
0.9
0.35
5
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 10 V; f = 1 MHz
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
pF
Ce
−
−
pF
Cre
fT
−
−
pF
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
−
GHz
dB
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
−
−
−
16
−
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
11
2
−
−
−
dB
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
3
Note
2
S21
--------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
(1 – S11 2) (1 – S22
)
2
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MBB963 - 1
MCD074
800
120
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
600
80
40
400
200
0
0
0
0
50
100
150
200
10
20
30
I
(mA)
C
o
T ( C)
s
VCE = 10 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MBB275
MCD075
6
0.6
handbook, halfpage
handbook, halfpage
f
C
T
re
(GHz)
(pF)
4
0.4
2
0
0.2
0
0
0
10
20
30
6
12
18
24
I
(mA)
C
V
(V)
CB
VCE = 10 V; Tamb = 25 °C; f = 500 MHz.
IC = ic = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD077
MCD078
30
30
handbook, halfpage
handbook, halfpage
MSG
gain
(dB)
gain
(dB)
MSG
G
UM
20
10
0
20
10
G
UM
0
0
0
5
10
20
I
15
25
(mA)
5
10
15
20
25
(mA)
C
I
C
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MCD079
MCD080
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
40
gain
(dB)
G
UM
40
G
UM
MSG
30
30
MSG
20
20
G
max
G
max
10
0
10
0
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f
(MHz)
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8 Gain as a function of frequency; typical
values.
Fig.9 Gain as a function of frequency; typical
values.
1998 Sep 23
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD081
MCD082
4
4
handbook, halfpage
handbook, halfpage
I
= 15 mA
f = 2 GHz
C
F
F
(dB)
(dB)
10 mA
5 mA
3
3
2
1
0
1 GHz
500 MHz
2
1
0
2
1
10
10
2
3
4
10
10
10
I
(mA)
C
f (MHz)
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
stability circle
1
0.5
2
0.2
5
*
OPT
10
+
j
F
= 1.6 dB
2
min
0
∞
0.2
0.5
1
5
10
– j
MSG
23.9 dB
10
2 dB
5
0.2
3 dB
4 dB
2
0.5
MCD083
1
Zo = 50 Ω.
Maximum stable gain = 23.9 dB.
Fig.12 Common emitter noise figure circles; typical values.
6
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
0.5
2
stability circle
0.2
5
OPT
10
*
+ j
F
= 2.1 dB
min
0
∞
MSG
19.9 dB
0.2
1
0.5
2
5
10
– j
10
2.5 dB
3 dB
4 dB
5
0.2
2
0.5
MCD084
1
Zo = 50 Ω.
Maximum stable gain = 19.9 dB.
Fig.13 Common emitter noise figure circles; typical values.
1
0.5
2
5 dB
4 dB
0.2
5
3.5 dB
OPT
10
+ j
– j
*
F
= 3 dB
min
0
∞
0.2
1
0.5
2
5
10
G
max
10
*
12.5 dB
12 dB
5
0.2
10 dB
2
0.5
MCD085
1
Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
7
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
0.5
2
3 GHz
0.2
5
10
+
j
0.2
0.5
1
2
5
10
0
∞
– j
40 MHz
10
5
0.2
2
0.5
MCD086
1
VCE = 10 V; IC = 15 mA.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
45
135
40 MHz
30
o
o
0
180
50
40
20
10
3 GHz
_
o
_
o
45
135
_
o
MCD072
90
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
8
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
o
90
o
o
45
135
3 GHz
40
MHz
o
o
0
180
0.04 0.08 0.12 0.16 0.20
_
o
_
o
45
135
_
o
MCD071
90
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
40 MHz
10
5
0.2
3 GHz
2
0.5
MCD073
1
VCE = 10 V; IC = 15 mA.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
9
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
SPICE parameters for BFR90A/X die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (note 1)
37 (note 1)
38
VJS
MJS
FC
750.0
0.000
850.0
1
IS
411.8
102.6
997.2
62.67
3.200
4.010
1.577
18.10
996.2
3.369
1.281
279.9
1.075
10.00
1.000
10.00
1.164
2.320
0.000
1.110
3.000
890.5
600.0
258.5
15.49
39.14
2.152
213.7
0.000
546.5
380.8
202.9
150.0
5.618
0.000
aA
−
−
2
BF
m
3
NF
m
V
Note
4
VAF
IKF
ISE
NE
1. These parameters have not been extracted,
the default values are shown.
5
A
6
fA
−
7
C
cb
handbook, halfpage
8
BR
−
9
NR
m
V
10
VAR
IKR
ISC
NC
L
B
L1
L2
11
A
B
B'
C'
C
12
aA
−
E'
C
C
be
ce
13
14
RB
Ω
L
E
15
IRB
RBM
RE
µA
Ω
MBC964
16
L3
17
Ω
18
RC
Ω
E
19 (note 1)
XTB
EG
−
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/fc).
fc = scaling frequency = 100 MHz.
20 (note 1)
eV
−
21 (note 1)
XTI
CJE
VJE
MJE
TF
22
fF
mV
m
ps
−
Fig.19 Package equivalent circuit SOT143B.
23
24
25
List of components (see Fig.19)
26
XTF
VTF
ITF
DESIGNATION
Cbe
VALUE
UNIT
27
V
28
mA
deg
fF
mV
m
m
ns
F
84
fF
29
PTF
CJC
VJC
MJC
XCJC
TR
Ccb
Cce
L1
L2
L3
LB
17
fF
30
191
fF
31
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
32
33
34
35 (note 1)
CJS
LE
1998 Sep 23
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1998 Sep 23
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Sep 23
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
NOTES
1998 Sep 23
15
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/04/pp16
Date of release: 1998 Sep 23
Document order number: 9397 750 04344
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Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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