BFQ18A_2015 [JMNIC]
NPN 4 GHz wideband transistor;
| 型号： | BFQ18A_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 4 GHz wideband transistor |
| 文件： | 总6页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ18A
NPN 4 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
DESCRIPTION
PINNING
PIN
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
DESCRIPTION
Code: FF
page
1
2
3
emitter
collector
base
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
−
−
−
−
4
25
18
150
1
V
V
mA
W
Ptot
up to Ts = 155 °C (note 1)
fT
IC = 100 mA; VCE = 10 V; f = 500 MHz;
−
GHz
Tj = 25 °C
Cre
dim
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
−
pF
dB
intermodulation distortion
IC = 80 mA; VCE = 10 V; RL = 75 Ω;
Vo = 700 mV; measured at
f(p+q-r) = 793.25 MHz
−
−60
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
−
−
−
−
25
18
2
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
V
open collector
V
150
1
mA
W
°C
°C
Ptot
Tstg
Tj
up to Ts = 155 °C (note 1)
−65 150
175
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 155 °C (note 1)
20 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
DC current gain
CONDITIONS
MIN.
25
TYP.
UNIT
hFE
Cc
Ce
Cre
fT
IC = 100 mA; VCE = 10 V
−
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 10.7 MHz
IC = 100 mA; VCE = 10 V; f = 500 MHz
−
−
−
−
−
2
pF
11
1.2
4
pF
pF
GHz
dB
dim
intermodulation distortion (see Fig.2) note 1
−60
Note
1. Ic = 80 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vo = 700 mV; fp =795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
120
handbook, halfpage
5 µH
handbook, halfpage
1.5 nF
2.2 nF
h
FE
V
BB
200 Ω
V
CC
80
40
5 µH
10 kΩ
10 nF
L1
4.7 nF
10 nF
DUT
2.2 nF
0.68
pF
R
L
0.68 pF
12 Ω
0
0
MBB829
40
80
120
160
(mA)
I
C
f = 40 − 860 MHz.
VCE = 10 V; Tj = 25 °C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3 DC current gain as a function of collector
current.
MBB357
8
handbook, halfpage
f
T
(GHz)
6
4
2
0
0
40
80
120
160
I
(mA)
C
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
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