BFQ19SE6327BTSA1 [INFINEON]
RF Small Signal Bipolar Transistor,;
| 型号： | BFQ19SE6327BTSA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, |
| 文件： | 总6页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFQ19S
NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and
1
2
3
2
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFQ19S
Marking
FG
Pin Configuration
2 = C 3 = E
Package
SOT89
1 = B
Maximum Ratings
Parameter
Symbol
Value
15
20
20
3
210
21
1
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CES
CBO
EBO
mA
W
I
I
C
Base current
Total power dissipation
B
2)
P
tot
T ≤ 85°C
S
150
- ... -
-65 ... 150
-65 ... 150
°C
-
°C
Junction temperature
Operation junction temperature range
Ambient temperature
T
T
T
T
jo
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 65
Unit
K/W
3)
R
thJS
1Pb-containing package may be available upon special request
2T is measured on the collector lead at the soldering point to the pcb
S
3For calculation of R
thJA
please refer to Application Note Thermal Resistance
2010-03-12
1
BFQ19S
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
15
-
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
10
µA
Collector-emitter cutoff current
= 20 V, V = 0
I
CES
V
CE
BE
-
-
-
100 nA
100 µA
Collector-base cutoff current
= 10 V, I = 0
I
CBO
V
CB
E
-
Emitter-base cutoff current
= 2 V, I = 0
I
EBO
V
EB
C
70
100
140
-
DC current gain-
I = 70 mA, V = 8 V, pulse measured
h
FE
C
CE
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2
BFQ19S
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
4
5.5
-
GHz
f
T
I = 70 mA, V = 8 V, f = 500 MHz
C
CE
-
-
-
1.05
1.35 pF
Collector-base capacitance
= 10 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
F
cb
ce
eb
V
CB
BE
0.4
3.9
-
Collector emitter capacitance
V
= 10 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
-
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
dB
Noise figure
I = 20 mA, V = 6 V, Z = Z
,
C
CE
S
Sopt
f = 900 MHz
f = 1.8 GHz
-
-
1.8
3
-
-
1)
Power gain, maximum available
G
ma
I = 70 mA, V = 8 V, Z = Z
Z = Z
,
C
CE
S
Sopt,
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
11.5
7
-
-
2
Transducer gain
|S
|
dB
21e
I = 30 mA, V = 8 V, Z = Z = 50Ω,
C
CE
S
L
f = 900 MHz
f = 1.8 GHz
-
-
9.5
4
-
-
Third order intercept point at output
= 8 V, I = 70 mA, Z = Z , Z = Z ,
Lopt
IP
-
32
-
dBm
3
V
CE
C
S
Sopt
L
f = 1.8 GHz
2
1/2
1G
= |S /S | (k-(k -1)
)
ma
21 12
2010-03-12
3
BFQ19S
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 2
1200
mW
1000
900
800
700
600
500
400
300
200
100
0
K/W
0.5
10 1
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC
p
10 2
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
0.2
0.5
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
2010-03-12
4
Package SOT89
BFQ19S
Package Outline
0.1
4.5
B
0.1
1.5
45˚
0.25
0.2 MAX.1)
0.05
0.2
1.6
0.15
1
2
3
1.5
0.1
0.35
+0.2
-0.1
0.45
M
0.15
B
x3
3
0.2
B
1) Ejector pin markings possible
Foot Print
2.0
0.8
0.8
0.7
Marking Layout (Example)
BAW78D
Type code
Pin 1
2005, June
Date code (YM)
Manufacturer
Standard Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.2
8
Pin 1
1.6
4.3
2010-03-12
5
BFQ19S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-03-12
6
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