BFQ67W_2015 [JMNIC]

BFQ67W_2015;


型号：	BFQ67W_2015
厂家：	QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：	BFQ67W_2015
文件：	总10页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ67W

NPN 8 GHz wideband transistor

September 1995

Product speciﬁcation

File under Discrete Semiconductors, SC14

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

FEATURES

PINNING

• High power gain

DESCRIPTION

• Low noise figure

Code: V2

• High transition frequency

base

handbook, 2 columns

• Gold metallization ensures

excellent reliability

emitter

collector

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323

envelope.

MBC870

Top view

It is designed for wideband

applications such as satellite TV

tuners and RF portable

communications equipment up to

2 GHz.

Fig.1 SOT323.

QUICK REFERENCE DATA

SYMBOL

V_CBO

V_CEO

I_C

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

DC current gain

open emitter

open base

−

300

−

P_tot

up to T_s= 118 °C; note 1

−

h_FE

I_C= 15 mA; V_CE= 5 V; T_j= 25 °C

−

100

f_T

transition frequency

I_C= 15 mA; V_CE= 8 V; f = 2 GHz;

T_amb= 25 °C

−

GHz

G_UM

maximum unilateral power gain

noise ﬁgure

I_c= 15 mA; V_CE= 8 V; f = 1 GHz;

T_amb= 25 °C

−

I_c= 5 mA; V_CE= 8 V; f = 1 GHz

1.3

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

DC collector current

total power dissipation

storage temperature

junction temperature

−

open base

open collector

2.5

°C

P_tot

T_stg

T_j

up to T_s= 118 °C; note 1

300

150

175

−65

−

°C

Note

1. T_sis the temperature at the soldering point of the collector tab.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

THERMAL RESISTANCE

SYMBOL

R_{th j-s}

PARAMETER

CONDITIONS

THERMAL RESISTANCE

thermal resistance from junction to

soldering point

up to T_s= 118 °C; note 1

190 K/W

Note

1. T_sis the temperature at the soldering point of the collector tab.

CHARACTERISTICS

T_j= 25 °C, unless otherwise speciﬁed.

SYMBOL

I_CBO

PARAMETER

collector cut-off current

DC current gain

CONDITIONS

I_E= 0; V_CB= 5 V

MIN. TYP. MAX. UNIT

−

h_FE

C_c

C_e

C_re

f_T

I_C= 15 mA; V_CE= 5 V

−

100

0.7

1.3

0.5

collector capacitance

emitter capacitance

feedback capacitance

transition frequency

I_E= i_e= 0; V_CB= 8 V; f = 1 MHz

I_C= i_c= 0; V_EB= 0.5 V; f = 1 MHz

I_C= 0; V_CB= 8 V; f = 1 MHz

−

I_C= 15 mA; V_CE= 8 V; f = 2 GHz;

−

GHz

T_amb= 25 °C

G_UM

maximum unilateral power gain I_C= 15 mA; V_CE= 8 V; f = 1 GHz

−

(note 1)

T_amb= 25 °C

I_C= 15 mA; V_CE= 8 V; f = 2 GHz;

T_amb= 25 °C

noise ﬁgure

Γ_s= Γ_opt; I_C= 5 mA; V_CE= 8 V;

1.3

f = 1 GHz

Γ_s= Γ_opt; I_C= 15 mA; V_CE= 8 V;

f = 1 GHz

Γ_s= Γ_opt; I_C= 5 mA; V_CE= 8 V;

f = 2 GHz

2.2

2.5

2.7

I_C= 5 mA; V_CE= 8 V;

f = 2 GHz; Z_s= 60 Ω

Γ_s= Γ_opt; I_C= 15 mA; V_CE= 8 V;

f = 2 GHz

I_C= 5 mA; V_CE= 8 V;

f = 2 GHz; Z_s= 60 Ω

Note

1. G_UMis the maximum unilateral power gain, assuming S₁₂is zero and

S₂₁

--------------------------------------------------------------

G_UM= 10 log

dB.

1 – S₁₁

1 – S₂₂

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

MRC045- 1

MBB301

400

handbook, halfpage

120

handbook, halfpage

tot

(mW)

300

200

100

150

200

T ( C)

(mA)

V_CE= 5 V; T_j= 25 °C.

Fig.2 Power derating curve.

Fig.3 DC current gain as a function of collector

current.

MRC039

MBB303

0.8

handbook, halfpage

(GHz)

(pF)

0.6

0.4

0.2

(V)

(mA)

I_C= 0; f = 1 MHz.

V_CE= 8 V; f = 2 GHz; T_amb= 25 °C.

Fig.4 Feedback capacitance as a function of

collector-base voltage.

Fig.5 Transition frequency as a function of

collector current.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

In Figs 6 to 9, G_UM= maximum unilateral power gain;

MSG = maximum stable gain; G_max= maximum available

gain.

MRC042

MRC040

handbook, halfpage

gain

(dB)

MSG

max

MSG

max

(mA)

−2

−1

f (GHz)

V_CE= 8 V; f = 1 GHz; T_amb= 25 °C.

I_C= 5 mA; V_CE= 8 V; T_amb= 25 °C.

Fig.6 Gain as a function of collector current.

Fig.7 Gain as a function of frequency.

MRC041

MRC043

handbook, halfpage

gain

(dB)

MSG

max

−2

−1

−2

−1

f (GHz)

I_C= 15 mA; V_CE= 8 V; T_amb= 25 °C.

I_C= 30 mA; V_CE= 8 V; T_amb= 25 °C.

Fig.8 Gain as a function of frequency.

Fig.9 Gain as a function of frequency.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

MRC044

handbook, halfpage

(dB)

(mA)

V_CE= 8 V; f = 1 GHz.

Fig.10 Minimum noise figure as a function of

collector current.

90°

handbook, full pagewidth

1.0

0.8

0.6

0.4

0.2

135°

45°

0.5

= 1.5 dB

opt

min

0.2

0.5

180°

0°

F = 2 dB

F = 2.5 dB

F = 3 dB

0.2

0.5

−45°

−135°

MRC046

1.0

−90°

I_C= 5 mA; V_CE= 8 V;

f = 1 GHz; Z_o= 50 Ω.

Fig.11 Noise circle.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

90°

handbook, full pagewidth

1.0

0.8

0.6

0.4

0.2

135°

45°

0.5

0.2

3 GHz

0.2

0.5

180°

0°

40 MHz

0.2

0.5

−45°

−135°

MRA047

1.0

−90°

I_C= 15 mA; V_CE= 8 V; Z_o= 50 Ω.

Fig.12 Common emitter input reflection coefficient (S₁₁).

90°

handbook, full pagewidth

135°

45°

40 MHz

3 GHz

0°

180°

−45°

−135°

MRC048

−90°

I_C= 15 mA; V_CE= 8 V.

Fig.13 Common emitter forward transmission coefficient (S₂₁).

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

90°

handbook, full pagewidth

135°

45°

3 GHz

40 MHz

0°

180°

0.5

0.4

0.3

0.2

0.1

−45°

−135°

MRC049

−90°

I_C= 15 mA; V_CE= 8 V.

Fig.14 Common emitter reverse transmission coefficient (S₁₂).

90°

handbook, full pagewidth

1.0

0.8

0.6

0.4

0.2

135°

45°

0.5

0.2

0.5

180°

0°

40 MHz

3 GHz

0.2

0.5

−45°

−135°

MRC050

1.0

−90°

I_C= 15 mA; V_CE= 8 V; Z_o= 50 Ω.

Fig.15 Common emitter output reflection coefficient (S₂₂).

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT323

v M

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

max

UNIT

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.23

0.13

0.1

1.3

0.65

0.2

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT323

SC-70

97-02-28

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFQ67W

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

September 1995

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