BLF177_15 [JMNIC]
HF/VHF power MOS transistor;
| 型号： | BLF177_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | HF/VHF power MOS transistor |
| 文件： | 总20页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF177
HF/VHF power MOS transistor
1998 Jul 02
Product specification
Supersedes data of September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
FEATURES
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
andbook, halfpage
4
3
• Good thermal stability
• Withstands full load mismatch.
d
APPLICATIONS
g
s
MBB072
• Designed for industrial and military
applications in the HF/VHF
frequency range.
1
2
MLA876
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
Fig.1 Simplified outline (SOT121B) and symbol.
CAUTION
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINNING
Product and environmental safety - toxic materials
PIN
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
(MHz)
SSB class-AB
CW class-B
28
50
50
150 (PEP)
150
>20
>35
<−30
<−30
108
typ. 19
typ. 70
−
−
1998 Jul 02
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
110
UNIT
VDS
VGS
ID
−
−
−
−
V
gate-source voltage
drain current (DC)
±20
16
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
T
mb ≤ 25 °C
220
150
200
W
−65
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
K/W
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
max. 0.8
max. 0.2
MGP089
MRA906
2
10
300
handbook, halfpage
handbook, halfpage
I
P
D
tot
(A)
(W)
10
200
(1)
(2)
(1)
(2)
1
100
−1
0
0
10
2
3
1
10
10
10
50
100
150
V
(V)
T
(°C)
DS
h
(1) Current in this area may be limited by RDSon
.
(1) Short-time operation during mismatch.
(2) Continuous operation.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1998 Jul 02
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ID = 50 mA; VGS = 0
MIN.
110
TYP. MAX. UNIT
V(BR)DSS
IDSS
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
−
−
−
−
−
−
V
VGS = 0; VDS = 50 V
VGS = ±20 V; VDS = 0
ID = 50 mA; VDS = 10 V
ID = 50 mA; VDS = 10 V
−
−
2
−
2.5
1
mA
µA
V
IGSS
VGSth
∆VGS
4.5
100
gate-source voltage difference of
matched pairs
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 5 A; VDS = 10 V
4.5
−
6.2
0.2
25
−
S
RDSon
IDSX
Cis
ID = 5 A; VGS = 10 V
0.3
−
Ω
VGS = 10 V; VDS = 10 V
−
A
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
−
480
190
14
−
pF
pF
pF
Cos
Crs
output capacitance
−
−
feedback capacitance
−
−
MGP090
MGP091
0
30
handbook, halfpage
handbook, halfpage
T.C.
I
(mV/K)
D
(A)
−1
20
−2
−3
−4
−5
10
0
0
−2
−1
5
10
15
10
10
1
10
I
(A)
V
(V)
D
GS
VDS = 10 V; valid for Th = 25 to 70 °C.
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
1998 Jul 02
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MBK408
MGP092
1200
400
handbook, halfpage
handbook, halfpage
R
C
DSon
(pF)
(mΩ)
800
400
300
C
is
200
100
C
os
0
0
20
40
60
0
50
100
150
V
(V)
T (°C)
DS
j
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
MGP093
300
handbook, halfpage
C
rs
(pF)
200
100
0
0
10
20
30
40
50
(V)
V
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jul 02
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise specified.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
MODE OF
OPERATION
f
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
(MHz)
SSB, class-AB
28
50
0.7
20 to 150
(PEP)
>20
typ. 35
>35
typ. 40
<−30
typ. −35
<−30
typ. −38
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; VDS = 50 V at rated output power.
MGP096
MGP094
30
60
handbook, halfpage
handbook, halfpage
G
p
η
D
(dB)
(%)
20
40
10
20
0
0
0
0
100
200
100
200
P
(W) PEP
P (W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9 Power gain as a function of load power;
typical values.
Fig.10 Two tone efficiency as a function of load
power; typical values.
1998 Jul 02
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP097
MGP098
−20
−20
handbook, halfpage
handbook, halfpage
d
5
d
3
(dB)
(dB)
−30
−30
−40
−50
−60
−40
−50
−60
0
100
200
0
100
200
P
(W) PEP
P
(W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
GS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
R
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
C9
C12
C14
C15
L3
D.U.T.
L6
output
50 Ω
C3
C1
L2
L1
input
50 Ω
C10 C11
C2
C4
L4
R1
R3
R2
C5
C13
C6
L5
C7
R5
C8
R4
+V
G
+V
MGP095
D
Fig.13 Test circuit for class-AB operation at 28 MHz.
7
1998 Jul 02
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components class-AB test circuit (see Fig.13)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C4, C13, C14 film dielectric trimmer
7 to 100 pF
56 pF
2222 809 07015
C2
multilayer ceramic chip capacitor
(note 1)
C3, C11
multilayer ceramic chip capacitor
(note 1)
62 pF
C5, C6
C7
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
100 nF
2222 852 47104
2222 852 47104
3 × 100 nF
2.2 µF, 63 V
20 pF
C8
C9, C10
multilayer ceramic chip capacitor
(note 1)
C12
C15
L1
multilayer ceramic chip capacitor
(note 1)
100 pF
150 pF
133 nH
multilayer ceramic chip capacitor
(note 1)
5 turns enamelled 0.7 mm copper
wire
length 4.5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L2, L3
L4
stripline (note 2)
41.1 Ω
length 13 × 6 mm
7 turns enamelled 1.5 mm copper
wire
236 nH
length 12.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
L5
L6
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
5 turns enamelled 2 mm copper wire 170 nH
length 11.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
R1, R2
R2
metal film resistor
metal film resistor
metal film resistor
metal film resistor
10 Ω, 1 W
10 kΩ, 0.4 W
1 MΩ, 0.4 W
10 kΩ, 1 W
R3
R5
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
1998 Jul 02
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP099
MGP100
10
30
handbook, halfpage
handbook, halfpage
Z
i
G
p
(Ω)
(dB)
r
i
5
0
20
10
x
i
−5
0
0
0
10
20
30
10
20
30
f (MHz)
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Fig.15 Power gain as a function of frequency;
typical values.
1998 Jul 02
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
APPLICATION INFORMATION FOR CLASS-B OPERATION
RF performance in CW operation in a common source class-B test circuit (see Fig.19).
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω unless otherwise specified.
MODE OF
OPERATION
f
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
(MHz)
CW, class-B
108
50
0.1
150
typ. 19
typ. 70
MGP101
MGP102
30
100
handbook, halfpage
handbook, halfpage
G
p
(dB)
η
D
(%)
20
50
10
0
0
0
0
100
200
100
200
P
(W)
L
P
(W)
L
Class-B operation; VDS = 50 V; IDQ = 100 mA;
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
RGS = 15.8 Ω; f = 108 MHz.
Fig.16 Power gain as a function of load power;
typical values.
Fig.17 Two tone efficiency as a function of load
power; typical values.
1998 Jul 02
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP103
200
handbook, halfpage
P
L
(W)
100
0
0
1
2
3
4
P
(W)
IN
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Fig.18 Load power as a function of input power;
typical values.
C17
C18
C13
L8
C15
C16
D.U.T.
BLF177
L4
L7
output
50 Ω
C3
C2
C4
C5
C1
L2
L3
L1
input
50 Ω
C14
L5
C9
C10
R1
R2
C11
L6
C12
C6
R6
C7
R3
+V
C8
D
C19
R5
R4
MGP104
Fig.19 Test circuit for class-B operation at 108 MHz.
11
1998 Jul 02
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components class-B test circuit (see Fig.19)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C16, C18 film dielectric trimmer
2.5 to 20 pF
20 pF
2222 809 07004
C3
multilayer ceramic chip capacitor
(note 1)
C4, C5
multilayer ceramic chip capacitor
(note 1)
62 pF
1 nF
C6, C7, C9, C10
multilayer ceramic chip capacitor
(note 1)
C8
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 nF
10 nF
2222 852 47104
2222 852 47103
2222 852 47104
C11
C12
3 × 100 nF
36 pF
C13, C14
multilayer ceramic chip capacitor
(note 1)
C15
C17
multilayer ceramic chip capacitor
(note 1)
12 pF
multilayer ceramic chip capacitor
(note 1)
5.6 pF
C19
L1
electrolytic capacitor
4.4 µF, 63 V
2222 030 28478
3 turns enamelled 0.8 mm copper
wire
22 nH
length 5.5 mm;
int. dia. 3 mm;
leads 2 × 5 mm
L2
stripline (note 2)
stripline (note 2)
64.7 Ω
41.1 Ω
122 nH
31 × 3 mm
10 × 6 mm
L3, L4
L5
6 turns enamelled 1.6 mm copper
wire
length 13.8 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L6
L7
L8
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
1 turn enamelled 1.6 mm copper
wire
16.5 nH
34.4 nH
int. dia. 9 mm;
leads 2 × 5 mm
2 turns enamelled 1.6 mm copper
wire
length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5 mm
R1, R2
R3
metal film resistor
metal film resistor
cermet potentiometer
metal film resistor
metal film resistor
31.6 Ω, 1 W
1 kΩ, 0.4 W
5 kΩ
R4
R5
44.2 Ω, 0.4 W
10 Ω, 1 W
R6
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
1998 Jul 02
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
174
strap
strap
70
rivet
strap
R4
R5
C19
L6
+V
D
R6
R3
C8
C11
C10
C9
C6
C7
C12
C13
L5
R1
R2
L3
C4
C5
C15
C16
C3
C2
L2
L1
L7
L8
C17
C18
L4
C14
C1
MGP105
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth
connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact
between upper and lower sheets.
Fig.20 Component layout for 108 MHz class-B test circuit.
1998 Jul 02
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP107
MGP108
4
10
handbook, halfpage
handbook, halfpage
Z
Z
i
L
(Ω)
(Ω)
2
0
8
r
i
R
X
L
6
4
2
x
i
L
−2
−4
−6
0
0
0
100
200
100
200
f (MHz)
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Fig.21 Input impedance as a function of frequency
(series components); typical values.
Fig.22 Load impedance as a function of frequency
(series components); typical values.
MGP109
30
handbook, halfpage
G
p
(dB)
20
handbook, halfpage
10
Z
Z
L
MBA379
i
0
0
100
200
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Fig.24 Power gain as a function of frequency;
typical values.
Fig.23 Definition of transistor impedance.
1998 Jul 02
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
U
1
B
c
H
b
L
w
M
C
2
4
3
α
A
D
U
3
U
p
1
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
3
w
w
2
α
UNIT
1
1
2
1
5.82
5.56
12.83
12.57
7.27
6.17
12.86
12.59
2.67 28.45 7.93
2.41 25.52 6.32
3.30
3.05
4.45
3.91
24.90 6.48 12.32
24.63 6.22 12.06
0.16
0.10
18.42
0.725
1.02
0.51
0.02 0.04
mm
45°
0.229
0.219
0.505
0.495
0.286
0.243
0.506
0.496
0.105 1.120 0.312 0.130
0.095 1.005 0.249 0.120
0.255 0.485
0.245 0.475
0.006
0.004
0.175
0.154
0.98
0.97
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT121B
97-06-28
1998 Jul 02
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 02
16
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
NOTES
1998 Jul 02
17
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
NOTES
1998 Jul 02
18
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
NOTES
1998 Jul 02
19
Philips Semiconductors – a worldwide company
Argentina: see South America
Middle East: see Italy
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Fax. +43 160 101 1210
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
Norway: Box 1, Manglerud 0612, OSLO,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belgium: see The Netherlands
Brazil: see South America
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Portugal: see Spain
Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Colombia: see South America
Czech Republic: see Austria
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Slovakia: see Austria
Slovenia: see Italy
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp20
Date of release: 1998 Jul 02
Document order number: 9397 750 04059
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明