BLF521_15 [JMNIC]
UHF power MOS transistor;
| 型号： | BLF521_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | UHF power MOS transistor |
| 文件： | 总14页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF521
UHF power MOS transistor
November 1992
Product specification
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
FEATURES
PIN CONFIGURATION
• High power gain
ook, halfpage
1
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
d
2
3
g
s
MBB072
4
DESCRIPTION
MSB007
Top view
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
Fig.1 Simplified outline and symbol.
CAUTION
The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT172D
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN
1
DESCRIPTION
source
gate
2
3
drain
4
source
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
500
12.5
2
> 10
> 50
November 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
40
UNIT
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
1
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
10
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
THERMAL
RESISTANCE
PARAMETER
Rth j-mb
Rth j-a
thermal resistance from junction to mounting base
thermal resistance from junction to ambient (note 1)
17.5 K/W
75 K/W
Note
1. Mounted on printed circuit board, see Fig.12.
MRA989
MDA486
5
16
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
(2)
(1)
12
1
8
4
(1)
(2)
0
0
0.1
1
10
100
40
80
120
160
( °C)
V
(V)
DS
T
mb
(1) Current in this area may be limited by RDS(on)
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
November 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VGS = 0; ID = 3 mA
MIN. TYP. MAX. UNIT
V(BR)DSS
IDSS
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
40
−
−
−
V
VGS = 0; VDS = 12.5 V
−
10
1
µA
µA
V
IGSS
±VGS = 20 V; VDS = 0
−
−
VGS(th)
gfs
RDS(on)
IDSX
ID = 3 mA; VDS = 10 V
2
−
4.5
−
ID = 0.3 A; VDS = 10 V
80
−
135
3.5
1.3
5.3
7.8
1.8
mS
Ω
ID = 0.3 A; VGS = 15 V
4
VGS = 15 V; VDS = 10 V
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
−
A
Cis
input capacitance
−
−
pF
pF
pF
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
MDA484
MDA485
1600
15
handbook, halfpage
handbook, halfpage
I
D
T.C
(mV/K)
(mA)
1200
10
800
400
0
5
0
−5
0
4
8
12
16
V
20
(V)
2
3
1
10
10
10
I
(A)
GS
D
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
November 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
MDA483
MDA482
5
30
handbook, halfpage
handbook, halfpage
R
DSon
C
(Ω)
4
(pF)
20
10
3
2
C
os
C
is
1
0
0
0
0
40
80
120
160
4
8
12
16
T (°C)
V
(V)
j
DS
ID = 0.3 A; VGS = 15 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
MDA481
5
handbook, halfpage
C
rs
(pF)
4
3
2
1
0
0
4
8
12
16
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
November 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tamb = 25 °C; RGS = 274 Ω, unless otherwise specified.
RF performance in a common source class-B test circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
CW, class-B
500
12.5
10
2
> 10
> 50
typ. 13
typ. 60
Ruggedness in class-B operation
The BLF521 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases under
the following conditions:
VDS = 15.5 V; f = 500 MHz at rated output power.
MDA479
MDA480
4
20
100
handbook, halfpage
handbook, halfpage
η
G
P
L
(W)
D
(%)
p
(dB)
16
80
G
3
p
η
12
8
60
40
20
0
D
2
1
4
0
0
0
0.2
0.4
0.6
0.8
P
1.0
(W)
0.5
1.5
2.5
3.5
P
(W)
IN
L
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
ZL = 9.5 + j12.8; f = 500 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA;
ZL = 9.5 + j12.8; f = 175 MHz.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
Fig.10 Load power as a function of input power,
typical values.
November 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
C12
L9
L5
L8
L10
C14
C15
D.U.T.
C3
L3
50 Ω
output
L4
L1 L2
C1
50 Ω
input
BLF521
C13
C2
C4
L6
R1
C7
C11
R6
C5
C6
C8
L7
C9
R2
R3
C10
MDA475
+V
D
R4
R5
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
November 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C5, C8, C15 multilayer ceramic chip capacitor
(note 1)
390 pF, 500 V
C2, C13
C3
film dielectric trimmer
2 to 9 pF
2222 809 09002
multilayer ceramic chip capacitor
(note 2)
5.6 pF, 500 V
C4
film dielectric trimmer
2 to 18 pF
2222 809 09003
2222 852 47104
C6, C11
multilayer ceramic chip capacitor
2 × 100 nF in
parallel, 50 V
C7, C9
C10
multilayer ceramic chip capacitor
electrolytic capacitor
100 nF, 50 V
10 µF, 63 V
9.1 pF, 50 V
2222 852 47104
2222 030 38109
C12
multilayer ceramic chip capacitor
(note 2)
C14
L1
film dielectric trimmer
stripline (note 3)
stripline (note 3)
stripline (note 3)
stripline (note 3)
1.4 to 5.5 pF
83 Ω
2222 809 09001
20 × 2 mm
21 × 2 mm
19 × 2 mm
12 × 3 mm
L2
83 Ω
L3
83 Ω
L4, L5
L6
67 Ω
5 turns enamelled 0.5 mm copper 62 nH
wire
length 3.75 mm
int. dia. 3 mm
leads 2 × 4 mm
L7
grade 3B Ferroxcube RF choke
4312 020 36642
L8
stripline (note 3)
83 Ω
18.6 × 2 mm
31.6 × 2 mm
2 × 2 mm
L9
stripline (note 3)
83 Ω
L10
R1
R2
R3
R4
R5
R6
stripline (note 3)
83 Ω
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
274 Ω
1.96 kΩ
1 MΩ
5 kΩ
2322 151 72741
2322 151 71962
2322 151 71005
7.5 kΩ
10 Ω
2322 151 77502
2322 153 51009
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
November 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
+V
R4
DS
C9
C11
C10
R3
C7
R6
L7
C5
R1
R2
C6
L4
C8
C15
C3
C12
L6
L10
L5
L8
L9
L1
L2
L3
C1
C2
C4
C13
C14
MBA381
150 mm
rivets
strap
strap
strap
rivets
70
mm
strap
rivets
mounting
screws
(6x)
MBA380
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz test circuit.
November 1992
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
MDA478
MDA477
50
50
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
40
(Ω)
r
i
0
30
20
R
X
L
L
x
i
−50
10
−100
0
100
100
200
300
400
500
200
300
400
500
f (MHz)
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
RGS = 274 Ω; PL = 2 W.
RGS = 274 Ω; PL = 2 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
MDA476
20
handbook, halfpage
G
p
(dB)
16
12
8
handbook, halfpage
4
0
Z
Z
L
MBA379
i
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
RGS = 274 Ω; PL = 2 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency,
typical values.
November 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
Common emitter S-parameters
Measured at VDS = 12.5 V and ID = 100 mA.
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1000
0.968
0.864
0.701
0.626
0.587
0.580
0.580
0.581
0.588
0.596
0.605
−24.0
−55.4
10.749
9.105
6.353
4.693
3.622
2.959
2.498
2.131
1.874
1.656
1.473
161.5
138.3
112.7
97.0
85.6
76.5
68.8
61.4
54.7
48.8
43.0
0.044
0.094
0.130
0.140
0.141
0.139
0.135
0.130
0.123
0.115
0.107
72.6
51.7
29.7
17.2
9.4
0.900
0.828
0.735
0.693
0.678
0.675
0.675
0.677
0.677
0.683
0.689
−27.4
−62.4
−91.0
−100.8
−122.7
−136.3
−145.4
−152.1
−157.5
−162.3
−166.9
−171.2
−112.4
−127.0
−137.1
−144.6
−151.7
−157.6
−163.5
−168.8
4.0
0.0
−2.5
−4.3
−4.8
−4.4
Measured at VDS = 12.5 V and ID = 150 mA.
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1000
0.965
0.857
0.691
0.622
0.588
0.580
0.582
0.586
0.588
0.599
0.609
−25.9
−58.7
11.435
9.534
6.529
4.783
3.663
2.988
2.515
2.154
1.897
1.673
1.493
160.6
136.8
111.3
96.0
84.8
75.9
68.4
61.2
54.6
48.8
43.0
0.044
0.092
0.125
0.134
0.135
0.133
0.128
0.123
0.117
0.111
0.103
72.0
50.1
28.6
16.7
9.2
0.876
0.804
0.715
0.678
0.666
0.665
0.666
0.668
0.669
0.675
0.681
−29.2
−65.7
−95.1
−104.3
−125.8
−138.8
−147.5
−154.0
−159.1
−163.8
−168.1
−172.3
−116.7
−130.3
−140.8
−147.8
−154.9
−160.5
−166.3
−171.7
4.3
0.7
−1.3
−2.6
−2.6
−1.7
November 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
Measured at VDS = 12.5 V and ID = 200 mA.
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1000
0.965
0.851
0.688
0.623
0.590
0.585
0.583
0.589
0.593
0.602
0.612
−26.7
−60.7
11.660
9.625
6.524
4.751
3.644
2.968
2.495
2.137
1.877
1.656
1.476
160.1
135.9
110.5
95.2
84.3
75.3
67.8
60.7
54.3
48.4
42.8
0.044
0.091
0.123
0.131
0.132
0.130
0.126
0.120
0.114
0.108
0.100
71.4
49.4
27.9
16.4
9.2
0.854
0.783
0.699
0.666
0.657
0.658
0.659
0.662
0.664
0.670
0.677
−30.4
−67.7
−97.5
−106.5
−127.6
−140.3
−148.7
−155.0
−160.0
−164.6
−168.9
−173.0
−118.8
−132.7
−142.4
−150.0
−156.7
−162.2
−167.8
−173.0
4.3
1.0
−0.8
−1.9
−1.7
−0.5
Measured at VDS = 12.5 V and ID = 250 mA.
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1000
0.963
0.848
0.686
0.624
0.594
0.585
0.590
0.595
0.601
0.607
0.613
−27.3
−62.0
11.640
9.567
6.434
4.674
3.582
2.914
2.447
2.097
1.840
1.625
1.447
159.7
135.2
109.8
94.6
83.8
74.7
67.4
60.3
53.8
48.0
42.2
0.045
0.092
0.123
0.130
0.130
0.128
0.124
0.119
0.113
0.106
0.099
70.8
48.9
27.4
16.0
8.9
0.832
0.766
0.688
0.657
0.651
0.651
0.654
0.658
0.660
0.667
0.673
−31.3
−69.2
−99.3
−108.2
−128.9
−141.3
−149.6
−155.8
−160.7
−165.2
−169.4
−173.3
−120.3
−134.2
−143.9
−150.8
−157.6
−163.1
−168.8
−174.1
4.2
0.9
−0.6
−1.7
−1.3
−0.1
November 1992
12
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT172D
D
A
Q
c
D
1
H
b
4
b
1
H
1
3
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
H
Q
UNIT
1
1
3.31
3.04
0.89
0.63
5.33
5.08
3.71
2.89
5.20
4.95
26.17 1.15
24.63 0.88
0.16
0.10
mm
0.13 0.035
0.12 0.025
0.210
0.200
0.146
0.114
0.205
0.195
1.03 0.045
0.97 0.035
0.006
0.004
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-06-28
SOT172D
November 1992
13
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
14
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