JCS19N20 [JSMC]
N- CHANNEL MOSFET;型号: | JCS19N20 |
厂家: | JILIN SINO-MICROELECTRONICS CO., LTD. |
描述: | N- CHANNEL MOSFET |
文件: | 总10页 (文件大小:1733K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS19N20
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
18.0A
200 V
VDSS
Rdson-max
(@Vgs=10V)
Qg-typ
0.18Ω
47nC
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
用途
高频开关电源
电子镇流器
UPS 电源
产品特性
低栅极电荷
FEATURES
Low gate charge
Low Crss (typical 48pF )
Fast switching
低Crss (典型值48pF)
开关速度快
产品全部经过雪崩测试
高抗dv/dt 能力
RoHS 产品
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
器件重量
订 货 型 号
印
记
封
装
无卤素
包
装
Device
Weight
Order codes
Marking
Package
Halogen Free
Packaging
JCS19N20C-O-C-N-B
JCS19N20F-O-F-N- B
JCS19N20C TO-220C
JCS19N20F TO-220MF
否
否
NO
NO
条管 Tube
条管 Tube
2.06 g(typ)
2.22 g(typ)
版本:201510F
1/11
R
JCS19N20
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数 值
Value
JCS19N20C
项
目
符 号
单 位
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
Symbol
Unit
JCS19N20F
VDSS
200
V
ID
T=25℃
18.0
11.4
18.0*
11.4*
A
A
连续漏极电流
Drain Current -continuous
T=100℃
最大脉冲漏极电流(注1)
IDM
72
72*
A
V
Drain Current -pulse (note 1)
最高栅源电压
VGSS
EAS
±30
421
18
Gate-Source Voltage
单脉冲雪崩能量(注2)
mJ
A
Single Pulsed Avalanche Energy(note 2)
雪崩电流(注1)
IAR
Avalanche Current (note 1)
重复雪崩能量(注1)
EAR
dv/dt
14
4.4
mJ
V/ns
Repetitive Avalanche Current (note 1)
二极管反向恢复最大电压变化速率(注3)
Peak Diode Recovery dv/dt (note 3)
5.5
PD
140
44
W
TC=25℃
-Derate
above
25℃
耗散功率
Power Dissipation
1.12
0.35
W/℃
最高结温及存储温度
Operating and Storage Temperature
Range
TJ,TSTG
-55~+150
℃
℃
引线最高焊接温度
Maximum Lead Temperature for Soldering TL
Purposes
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201510F
2/10
R
JCS19N20
电特性 ELECTRICAL CHARACTERISTIC
项
目
符 号
测试条件
最小 典型最大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
200
-
-
-
Drain-Source Voltage
击穿电压温度特性
V
ΔBVDSS ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
0.2
-
-
V/℃
/ΔTJ
25℃
VDS=200V, VGS=0V, TC=25℃
VDS=160V, TC=125℃
-
-
1
零栅压下漏极漏电流
μA
IDSS
Zero Gate Voltage Drain Current
-
-
10 μA
正向栅极体漏电流
IGSSF
VDS=0V, VGS =30V
VDS=0V, VGS =-30V
-
-
100 nA
Gate-body leakage current, forward
反向栅极体漏电流
-
IGSSR
-100 nA
Gate-body leakage current, reverse
通态特性On-Characteristics
阈值电压
VGS(th) VDS = VGS , ID=250μA
RDS(ON) VGS =10V , ID=9.0A
gfs
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
0.15 0.18
-
-
Static Drain-Source On-Resistance
正向跨导
13.5
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
VDS = 40V , ID=9.0A(note 4)
VDS=25V,
GS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
-
-
1330 1760 pF
181 245 pF
48 65 pF
Input capacitance
V
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
版本:201510F
3/10
R
JCS19N20
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型最大 单位
Parameter
Symbol
Tests conditions
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间Turn-On delay time
上升时间Turn-On rise time
td(on)
tr
VDD=100V,ID=18A,RG=25Ω
VGS =10V
-
-
-
-
-
-
-
54 70
104 162 ns
395 ns
ns
(note 4,5)
td(off)
tf
327
延迟时间Turn-Off delay time
下降时间Turn-Off Fall time
107 145 ns
47 62 nC
栅极电荷总量Total Gate Charge
栅-源电荷Gate-Source charge
栅-漏电荷Gate-Drain charge
Qg
VDS =160V ,
ID=18A
Qgs
Qgd
8
-
-
nC
nC
VGS =10V(note 4,5)
22
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
-
-
-
-
18
72
A
A
V
正向最大脉冲电流
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
正向最大连续电流
Maximum Continuous Drain-Source VSD
Diode Forward Current
VGS=0V, IS=18A
1.48
反向恢复时间
trr
195
ns
Reverse recovery time
VGS=0V, IS=18A
dIF/dt=100A/μs (note 4)
反向恢复电荷
Qrr
1.48
μC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大值
项
目
符 号
单 位
Value
Parameter
Symbol
Unit
JCS19N20C JCS19N20F
结到管壳的热阻
Rth(j-c)
Rth(j-A)
0.89 2.85
℃/W
℃/W
Thermal Resistance, Junction to Case
结到环境的热阻
62.5
Thermal Resistance, Junction to Ambient
注:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction temperature
2:L=2.6mH, IAS=18A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
2:L=2.6mH, IAS=18A, VDD=50V, RG=25 Ω,起始结温
TJ=25℃
3:ISD ≤18A,di/dt ≤300A/μs, VDD≤BVDSS,起始结温TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
3:ISD ≤18A,di/dt ≤300A/μs, VDD≤BVDSS, Starting TJ=25℃
4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201510F
4/10
R
JCS19N20
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Capacitance Characteristics
Gate Charge Characteristics
12
10
8
2.0x103
VDS=40V
C =C +C (C =shorted)
iss
gs
gd ds
C =C +C
gd
VDS=100V
oss
ds
C
C =C
1.5x103
1.0x103
iss
rss
gd
6
VDS=160V
4
C
oss
5.0x102
2
Notes:
ID=18A
C
rss
0.0
0
0
1
10
0
10
20
30
40
50
10
VDS Drain-SourceVoltage[V]
Qg Toltal Gate Charge [nC]
版本:201510F
5/10
R
JCS19N20
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
vs. Temperature
On-Resistance Variation
vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
Notes:
Notes:
1. VGS=0V
2. ID=250μA
1. VGS=10V
2. ID=9A
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
Tj [℃]
Tj [℃ ]
Maximum Safe Operating Area
For JCS19N20C
Maximum Safe Operating Area
For JCS19N20F
Maximum Drain Current
vs. Case Temperature
20
16
12
8
4
0
25
50
75
100
125
150
TC CaseTemperature [℃]
版本:201510F
6/10
R
JCS19N20
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS19N20C
1
D
= 0 . 5
0
. 2
0 . 1
0 . 0 5
0 . 0 2
N
1
2
3
o
t e
s
:
0 . 1
Z
( t ) = 0 . 8 9
℃
/ W
/ t
M
C
a x
( t )
θ
u
J
C
F
D
T
t y
a c t o r ,
D
=
t
1
2
J
- T
=
P
* Z
M θ
0
. 0 1
J
M
c
D
s i n g l e p u l s e
P
D
M
0 . 0 1
t
1
t
2
1 E - 5
1 E - 4
1 E - 3
0 . 0 1
0 . 1
1
1 0
t 1 S q u a r e
W
a v e P u l s e
D
u r a t i o n [ s e c ]
Transient Thermal Response Curve
For JCS19N20F
1 0
D
= 0 . 5
1
0 . 2
0 . 1
0 . 0 5
0 . 0 2
N
1
2
3
o t e s :
Z
( t ) = 2 . 8 5 ℃ / W
J C
M
a x
( t )
θ
D
T
u t y F a c t o r ,
D
= t / t
1
2
- T = P
c
*
Z
θ
J M
D
M
J C
0 . 0 1
0 . 1
P
s i n g l e p u l s e
D
M
t
1
t
2
0 . 0 1
1 E - 5
1 E - 4
1 E - 3
0 . 0 1
0 . 1
1
1 0
t 1 S q u a r e
W a v e P u l s e D u r a t i o n [ s e c ]
版本:201510F
7/10
R
JCS19N20
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
单位Unit:mm
版本:201510F
8/10
R
JCS19N20
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
单位Unit:mm
版本:201510F
9/10
R
JCS19N20
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64678411
总机:86-432-64678411
传真:86-432-64665812
网址:HTUwww.hwdz.com.cnUTH
Fax:86-432-64665812
Web Site:HTUwww.hwdz.com.cnUTH
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64675588
64675688
电话: 86-432-64675588
64675688
64678411
64678411
Fax: 86-432-64671533
传真: 86-432-64671533
版本:201510F
10/10
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明