JCS4N60R-O-R-N-A [JSMC]

N-CHANNEL MOSFET;
JCS4N60R-O-R-N-A
型号: JCS4N60R-O-R-N-A
厂家: JILIN SINO-MICROELECTRONICS CO., LTD.    JILIN SINO-MICROELECTRONICS CO., LTD.
描述:

N-CHANNEL MOSFET

文件: 总16页 (文件大小:1978K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N道增强型场效应晶体管  
R
N-CHANNEL MOSFET  
JCS4N60  
封装 Package  
主要参数 MAIN CHARACTERISTICS  
4.0 A  
600 V  
2.5Ω  
27 nC  
ID  
VDSS  
Rdson(Vgs=10V)  
Qg  
APPLICATIONS  
用途  
l High efficiency switch  
mode power supplies  
l Electronic lamp ballasts  
based on half bridge  
l UPS  
l 高频开关电源  
l 电子镇流器  
l UPS 电源  
产品特性  
l低栅极电荷  
FEATURES  
lLow gate charge  
lLow Crss (typical 14pF )  
lFast switching  
lCrss (典型14pF)  
l开关速度快  
l产品全部经过雪崩测试  
ldv/dt 能力  
lRoHS 产品  
l100% avalanche tested  
lImproved dv/dt capability  
lRoHS product  
订货信息 ORDER MESSAGE  
订 货 型 号  
无卤素  
器件重量  
Device Weight  
Order codes  
Marking  
Package  
Halogen Free Packaging  
JCS4N60V-O-V-N-B  
JCS4N60R-O-R-N-B  
JCS4N60R-O-R-N-A  
JCS4N60S-O-S-N-B  
JCS4N60B-O-B-N-B  
JCS4N60C-O-C-N-B  
JCS4N60F-O-F-N-B  
JCS4N60V IPAK  
NO  
NO  
NO  
NO  
NO  
NO  
NO  
条管 Tube  
条管 Tube  
编带 REEL  
条管 Tube  
条管 Tube  
条管 Tube  
条管 Tube  
条管 Tube  
0.35 g(typ)  
0.30 g(typ)  
0.30 g(typ)  
1.37 g(typ)  
1.71 g(typ)  
2.15 g(typ)  
2.20 g(typ)  
1.78 g(typ)  
JCS4N60R DPAK  
JCS4N60R DPAK  
JCS4N60S TO-263  
JCS4N60B TO-262  
JCS4N60C TO-220C  
JCS4N60F TO-220MF  
JCS4N60F-O-F1-N-B JCS4N60F TO-220MF-K1 NO  
版本:201604F  
1/15  
R
JCS4N60  
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)  
数 值  
Value  
符 号  
JCS4N6 JCS4N60F  
Parameter  
Symbol  
JCS4N60 JCS4N60 0F(TO-22 (TO-220MF  
Unit  
V/R  
S/B/C  
0MF)  
-K1)  
最高漏极-源极直流电压  
VDSS  
600  
V
A
A
Drain-Source Voltage  
ID  
4.0  
2.5  
4.0*  
2.5*  
连续漏极电流  
T=25℃  
T=100℃  
Drain Current -continuous  
最大脉冲漏极电流1)  
Drain Current - pulse note 1)  
最高栅源电压  
IDM  
16  
16*  
A
V
VGSS  
±30  
240  
Gate-Source Voltage  
单脉冲雪崩能量2)  
Single Pulsed Avalanche  
Energy note 2)  
雪崩电流1)  
EAS  
mJ  
A
Avalanche Current  
note 1)  
IAR  
4.0  
重复雪崩能量1)  
Repetitive Avalanche Current  
note 1)  
EAR  
10.0  
mJ  
二极管反向恢复最大电压变化  
速率3)  
dv/dt  
5.5  
V/ns  
W
Peak Diode Recovery  
dv/dt note 3)  
PD  
51  
100  
48  
40  
TC=25℃  
-Derate  
above  
25℃  
耗散功率  
W/  
Power Dissipation  
0.39  
0.80  
0.38  
0.32  
最高结温及存储温度  
Operating and Storage  
Temperature Range  
TJTSTG  
-55+150  
引线最高焊接温度  
Maximum Lead Temperature  
for Soldering Purposes  
*漏极电流由最高结温限制  
TL  
300  
*Drain current limited by maximum junction temperature  
版本:201604F  
2/16  
R
JCS4N60  
电特性 ELECTRICAL CHARACTERISTICS  
符 号  
测试条件  
最小 典最大单 位  
Parameter  
关态特性 Off –Characteristics  
漏-源击穿电压  
Symbol  
Tests conditions  
Min Typ Max Units  
BVDSS  
ID=250µA, VGS=0V  
600  
-
-
-
V
Drain-Source Voltage  
击穿电压温度特性  
ΔBVDSS/Δ ID=250µA, referenced to  
Breakdown Voltage Temperature  
Coefficient  
0.65 - V/  
TJ  
25℃  
VDS=600V,VGS=0V,  
TC=25℃  
-
-
-
-
10 µA  
100 µA  
零栅压下漏极漏电流  
IDSS  
Zero Gate Voltage Drain Current  
VDS=480V, TC=125℃  
正向栅极体漏电流  
Gate-body leakage current,  
forward  
IGSSF  
VDS=0V, VGS =30V  
VDS=0V, VGS =-30V  
-
-
-
100 nA  
反向栅极体漏电流  
Gate-body leakage current,  
reverse  
IGSSR  
- -100 nA  
通态特On-Characteristics  
阈值电压  
VGS(th)  
RDS(ON)  
gfs  
VDS = VGS , ID=250µA  
VGS =10V , ID=2A  
2.0  
-
4.0  
V
S
Gate Threshold Voltage  
静态导通电阻  
Static Drain-Source  
On-Resistance  
-
-
2.0 2.5  
正向跨导  
4.7  
-
Forward Transconductance  
VDS = 40V , ID=2Anote 4)  
动态特Dynamic Characteristics  
输入电容  
VDS=25V,  
VGS =0V,  
f=1.0MHZ  
Ciss  
-
-
-
710 920 pF  
65 85 pF  
14 19 pF  
Input capacitance  
输出电容  
Coss  
Crss  
Output capacitance  
反向传输电容  
Reverse transfer capacitance  
版本:201604F  
3/16  
R
JCS4N60  
电特性 ELECTRICAL CHARACTERISTICS  
开关特Switching Characteristics  
延迟时Turn-On delay time  
上升时Turn-On rise time  
延迟时Turn-Off delay time  
下降时Turn-Off Fall time  
栅极电荷总Total Gate Charge  
栅-源电Gate-Source charge  
栅-漏电Gate-Drain charge  
td(on)  
tr  
VDD=300V,ID=4A,RG=25Ω  
note 45)  
-
-
-
-
-
-
-
20 50 ns  
55 120 ns  
70 150 ns  
55 120 ns  
27 30 nC  
td(off)  
tf  
VDS =480V ,  
Qg  
ID=4A  
Qgs  
Qgd  
3.6  
-
nC  
nC  
VGS =10V note 45)  
13.1 -  
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings  
正向最大连续电流  
Maximum Continuous Drain  
-Source Diode Forward Current  
正向最大脉冲电流  
IS  
-
-
-
-
-
4
A
A
V
Maximum Pulsed Drain-Source  
Diode Forward Current  
正向压降  
ISM  
16  
Drain-Source Diode  
Forward Voltage  
VSD  
VGS=0V,  
IS=4.0A  
-
1.4  
-
反向恢复时间  
trr  
-
-
330  
ns  
Reverse recovery time  
反向恢复电荷  
VGS=0V, IS=4.0A  
dIF/dt=100A/µs (note 4)  
Qrr  
2.67 -  
µC  
Reverse recovery charge  
热特THERMAL CHARACTERISTIC  
最大  
Max  
JCS4N60 JCS4N60 JCS4N60F( JCS4N60F(TO-22  
符 号  
单位  
Symbol  
Un  
Parameter  
结到管壳的热阻  
V/R  
S/B/C TO-220MF)  
0MF-K1)  
W
W
Rth(j-c)  
Rth(j-A)  
2.50  
1.25  
62.5  
2.60  
36.9  
3.11  
Thermal Resistance, Junction to Case  
结到环境的热阻  
83  
43.7  
Thermal Resistance, Junction to Ambient  
Notes:  
注释:  
1Pulse width limited by maximum junction  
1:脉冲宽度由最高结温限制  
temperature  
2L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,起始结  
TJ=25  
2L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting  
TJ=25℃  
3ISD 4.0A,di/dt ≤200A/µs,VDD≤BVDSS,起始结温  
TJ=25℃  
3 ISD 4.0A,di/dt ≤200A/µs,VDD≤BVDSS, Starting  
TJ=25℃  
4:脉冲测试:脉冲宽度≤300µs,占空比≤2%  
5:基本与工作温度无关  
4Pulse TestPulse Width ≤300μs,Duty Cycle≤2%  
5Essentially independent of operating temperature  
版本:201604F  
4/16  
R
JCS4N60  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
Transfer Characteristics  
On-Region Characteristics  
10  
VGS  
15V  
10V  
8V  
10  
Top  
7V  
6.5V  
6V  
150  
5.5V  
Bottom 5V  
1
25℃  
Notes  
1.250µs pulse test  
2.VDS=40V  
1
Notes  
1. 250µs pulse test  
2. TC=25℃  
0.1  
2
4
6
8
10  
10  
VGS [V]  
VDS [V]  
On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Body Diode Forward Voltage Variation  
vs. Source Current and Temperature  
3.2  
10  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
VGS=10V  
VGS=20V  
25  
1
150℃  
Notes:  
1. 250µspulsetest  
2. VGS=0V  
Note Tj=25℃  
0.1  
0.4  
0
1
2
3
4
5
6
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
ID [A]  
VSD [V]  
Gate Charge Characteristics  
Capacitance Characteristics  
12  
10  
8
VDS=480V  
VDS=300V  
VDS=120V  
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
QgToltal Gate Charge [nC]  
版本:201604F  
5/16  
R
JCS4N60  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
Breakdown Voltage Variation  
On-Resistance Variation  
vs. Temperature  
vs. Temperature  
1.15  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.10  
1.05  
1.00  
0.95  
Notes  
1. VGS=0V  
2. ID=250µA  
Notes  
1. VGS=10V  
2. ID=2.0A  
0.90  
-75  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-75  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tj []  
Tj[]  
Maximum Safe Operating Area  
For JCS4N60V/R/S/B/C  
Maximum Safe Operating Area  
For JCS4N60F(TO-220MF)  
Maximum Drain Current  
vs. Case Temperature  
Maximum Safe Operating Area  
For JCS4N60F(TO-220MF-K1)  
版本:201604F  
6/16  
R
JCS4N60  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
Transient Thermal Response Curve  
For JCS4N60V/R  
Transient Thermal Response Curve  
For JCS4N60S/B/C  
Transient Thermal Response Curve  
For JCS4N60F(TO-220MF)  
版本:201604F  
7/16  
R
JCS4N60  
Transient Thermal Response Curve  
For JCS4N60F(TO-220MF-K1)  
版本:201604F  
8/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
IPAK  
Unitmm  
版本:201604F  
9/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
DPAK  
Unitmm  
编带 REEL  
版本:201604F  
10/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-262  
Unitmm  
版本:201604F  
11/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-263  
Unitmm  
编带 REEL  
版本:201604F  
12/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220C  
Unitmm  
版本:201604F  
13/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220MF  
Unitmm  
版本:201604F  
14/16  
R
JCS4N60  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220MF-K1  
Unitmm  
版本:201604F  
15/16  
R
JCS4N60  
注意事项  
NOTE  
1.吉林华微电子股份有限公司的产品销售分  
为直销和销售代理,无论哪种方式,订货  
时请与公司核实。  
1. Jilin Sino-microelectronics co., Ltd sales its  
product either through direct sales or sales  
agent , thus, for customers, when ordering ,  
please check with our company.  
2.购买时请认清公司商标,如有疑问请与公  
2. We strongly recommend customers check  
carefully on the trademark when buying our  
product, if there is any question, please  
don’t be hesitate to contact us.  
司本部联系。  
3.在电路设计时请不要超过器件的绝对最大  
3. Please do not exceed the absolute  
maximum ratings of the device when circuit  
designing.  
额定值,否则会影响整机的可靠性。  
4.本说明书如有版本变更不另外告知。  
4. Jilin Sino-microelectronics co., Ltd reserves  
the right to make changes in this  
specification sheet and is subject to  
change without prior notice.  
CONTACT  
JILIN SINO-MICROELECTRONICS CO., LTD.  
联系方式  
吉林华微电子股份有限公司  
ADD: No.99 Shenzhen Street, Jilin City, Jilin  
Province, China.  
公司地址:吉林省吉林市深圳99 号  
Post Code: 132013  
邮编:132013  
Tel86-432-64678411  
总机:86-432-64678411  
传真:86-432-64665812  
网址:www.hwdz.com.cn  
Fax86-432-64665812  
Web Sitewww.hwdz.com.cn  
MARKET DEPARTMENT  
ADD: No.99 Shenzhen Street, Jilin City, Jilin  
Province, China.  
市场营销部  
地址:吉林省吉林市深圳99 号  
Post Code: 132013  
邮编:132013  
Tel: 86-432-64675588  
64675688  
电话: 86-432-64675588  
64675688  
64678411  
64678411  
Fax: 86-432-64671533  
传真: 86-432-64671533  
版本:201604F  
16/16  

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