JCS4N60SB-O-S-N-B [JSMC]
N-CHANNEL MOSFET;型号: | JCS4N60SB-O-S-N-B |
厂家: | JILIN SINO-MICROELECTRONICS CO., LTD. |
描述: | N-CHANNEL MOSFET |
文件: | 总18页 (文件大小:2013K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N沟道增强型场效应晶体管
R
N-CHANNEL MOSFET
JCS4N60B
封装 Package
主要参数 MAIN CHARACTERISTICS
4.0 A
600 V
2.4Ω
13.3nC
ID
VDSS
Rdson(Vgs=10V)
Qg
APPLICATIONS
用途
l High efficiency switch
mode power supplies
l Electronic lamp ballasts
based on half bridge
l 高频开关电源
l 电子镇流器
l LED 电源
l LED power supplies
产品特性
l低栅极电荷
FEATURES
lLow gate charge
lLow Crss (typical 9pF )
lFast switching
l低Crss (典型值9pF)
l开关速度快
l产品全部经过雪崩测试
l高抗dv/dt 能力
lRoHS 产品
l100% avalanche tested
lImproved dv/dt capability
lRoHS product
订货信息 ORDER MESSAGE
无卤素
包
装
器件重量
Device
Weight
订 货 型 号
印
记
封
装
Halogen
Order codes
Marking
Package
Free
Packaging
JCS4N60VB-O-V-N-B
JCS4N60RB-O-R-N-B
JCS4N60RB-O-R-N-A
JCS4N60BB-O-B-N-B
JCS4N60SB-O-S-N-B
JCS4N60CB-O-C-N-B
JCS4N60FB-O-F-N-B
JCS4N60FB-R-F-N-B
JCS4N60FB-O-F1-N-B
JCS4N60FB-O-F2-N-B
JCS4N60VB IPAK
否
否
否
否
否
否
否
NO 条管 Tube 0.35 g(typ)
NO 条管 Tube 0.30 g(typ)
NO 编带 Reel 0.30 g(typ)
NO 条管 Tube 1.71 g(typ)
NO 条管 Tube 1.37 g(typ)
NO 条管 Tube 2.15 g(typ)
NO 条管 Tube 2.20 g(typ)
JCS4N60RB DPAK
JCS4N60RB DPAK
JCS4N60BB TO-262
JCS4N60SB TO-263
JCS4N60CB TO-220C
JCS4N60FB TO-220MF
JCS4N60FB TO-220MF
是 YES 条管 Tube 2.20 g(typ)
JCS4N60FB TO-220MF-K1 否 NO 条管 Tube 1.78 g(typ)
JCS4N60FB TO-220MF-K2 否 NO 条管 Tube 1.78 g(typ)
版本:201604I
1/16
R
JCS4N60B
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数 值
Value
项
目
符 号
单
位
Uni
t
JCS4N60
JCS4N60
FB(TO-2
20MF)
Parameter
Symbol
JCS4N60
VB/RB
JCS4N60
FB(TO-22
0MF-K1/
K2)
CB/SB/BB
最高漏极-源极直流电压
VDSS
600
V
A
A
Drain-Source Voltage
ID
4.0
4.0*
连续漏极电流
T=25℃
T=100℃
Drain Current -continuous
2.5
2.5*
最大脉冲漏极电流(注1)
Drain Current - pulse
(note 1)
IDM
16
16*
A
V
最高栅源电压
VGSS
EAS
IAR
±30
17.5
4.0
Gate-Source Voltage
单脉冲雪崩能量(注2)
Single Pulsed Avalanche
Energy(note 2)
mJ
A
雪崩电流(注1)
Avalanche Current (note 1)
重复雪崩能量(注1)
Repetitive Avalanche Current
(note 1)
EAR
10.0
mJ
二极管反向恢复最大电压变化
速率(注3)
V/n
s
dv/dt
5.5
Peak Diode Recovery
dv/dt (note 3)
PD
51
100
43
36
W
TC=25℃
-Derate
above
25℃
耗散功率
W/
Power Dissipation
0.39
0.80
0.34
0.29
℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
-55~+150
℃
℃
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
*漏极电流由最高结温限制
TL
300
*Drain current limited by maximum junction temperature
版本:201604I
2/18
R
JCS4N60B
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型最大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250µA, VGS=0V
600
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250µA, referenced to
Breakdown Voltage Temperature
Coefficient
0.65 - V/℃
TJ
25℃
VDS=600V,VGS=0V,
TC=25℃
-
-
-
-
10 µA
100 µA
零栅压下漏极漏电流
IDSS
Zero Gate Voltage Drain Current
VDS=480V, TC=125℃
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
VDS=0V, VGS =-30V
-
-
-
100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
- -100 nA
通态特性On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250µA
VGS =10V , ID=2A
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
-
-
1.7 2.4
正向跨导
4.7
-
Forward Transconductance
VDS = 40V , ID=2A(note 4)
动态特性Dynamic Characteristics
输入电容
VDS=25V,
VGS =0V,
f=1.0MHZ
Ciss
-
-
-
490 642 pF
95 124 pF
Input capacitance
输出电容
Coss
Crss
Output capacitance
反向传输电容
9
12 pF
Reverse transfer capacitance
版本:201604I
3/18
R
JCS4N60B
电特性 ELECTRICAL CHARACTERISTICS
开关特性Switching Characteristics
延迟时间Turn-On delay time
上升时间Turn-On rise time
延迟时间Turn-Off delay time
下降时间Turn-Off Fall time
栅极电荷总量Total Gate Charge
栅-源电荷Gate-Source charge
栅-漏电荷Gate-Drain charge
td(on)
tr
VDD=300V,ID=4.0A,RG=25Ω
(note 4,5)
-
-
-
-
-
-
-
16 42 ns
49 111 ns
46 102 ns
37 84 ns
13.3 19 nC
td(off)
tf
VDS =480V ,
Qg
ID=4.0A
Qgs
Qgd
3.6
4.9
-
-
nC
nC
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
IS
-
-
-
-
-
4.0
16
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
ISM
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=4.0A
-
1.4
-
反向恢复时间
trr
-
-
330
ns
Reverse recovery time
反向恢复电荷
VGS=0V, IS=4.0A
dIF/dt=100A/µs (note 4)
Qrr
2.67 -
µC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大
Max
项
目
符 号
单位
JCS4N60 JCS4N60 JCS4N6 JCS4N60FB(
Parameter
Symbol
Unit
VB
CB
0FB(TO- TO-220MF-K
/RB
/SB/BB 220MF)
1/K2)
结到管壳的热阻
Rth(j-c)
Rth(j-A)
2.50
83
1.25
62.5
2.92
37.6
3.49
℃/W
℃/W
Thermal Resistance, Junction to Case
结到环境的热阻
42.09
Thermal Resistance, Junction to Ambient
Notes:
注释:
1:Pulse width limited by maximum junction
temperature
1:脉冲宽度由最高结温限制
2:L=0.5mH, IAS=8.0A, VDD=50V, RG=25 Ω,起始结
温TJ=25℃
2:L=0.5mH, IAS=8.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤4.0A,di/dt ≤200A/µs,VDD≤BVDSS,起始结温
TJ=25℃
3 :ISD ≤4.0A,di/dt ≤200A/µs,VDD≤BVDSS, Starting
TJ=25℃
4:脉冲测试:脉冲宽度≤300µs,占空比≤2%
5:基本与工作温度无关
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201604I
4/18
R
JCS4N60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
10
VGS
15V
10V
8V
10
Top
7V
6.5V
6V
150℃
5.5V
Bottom 5V
1
25℃
Notes:
1.250µs pulse test
2.VDS=40V
1
Notes:
1. 250µs pulse test
2. TC=25℃
0.1
2
4
6
8
10
10
VGS [V]
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
VGS=10V
25℃
1
150℃
Notes:
1. 250µspulsetest
2. VGS=0V
Note :Tj=25℃
VGS=20V
0.1
0.4
0
1
2
3
4
5
6
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
ID [A]
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
2
12
10
8
8.0x10
C =C +C (C =shorted)
iss
gs
gd ds
VDS=480V
VDS=300V
C =C +C
gd
oss
ds
C =C
2
rss
gd
6.0x10
VDS=120V
2
6
4.0x10
4
2
2.0x10
2
0.0
0
-1
0
10
1
10
0
2
4
6
8
10
12
14
10
VDS Drain-SourceVoltage[V]
QgToltal Gate Charge [nC]
版本:201604I
5/18
R
JCS4N60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
vs. Temperature
1.15
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.10
1.05
1.00
0.95
Notes:
1. VGS=0V
2. ID=250µA
Notes:
1. VGS=10V
2. ID=2.0A
0.90
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
T j [℃ ]
Tj [℃ ]
Maximum Safe Operating Area
For JCS4N60(V/R/C/S/B)B
Maximum Safe Operating Area
For JCS4N60FB(TO-220MF)
Maximum Drain Current
vs. Case Temperature
Maximum Safe Operating Area
For JCS4N60FB(TO-220MF-K1/K2)
版本:201604I
6/18
R
JCS4N60B
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS4N60(V/R)B
Transient Thermal Response Curve
For JCS4N60CB/SB/BB
Transient Thermal Response Curve
For JCS4N60FB(TO-220MF)
版本:201604I
7/18
R
JCS4N60B
Transient Thermal Response Curve
For JCS4N60FB(TO-220MF-K1/K2)
版本:201604I
8/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
IPAK
单位Unit:mm
版本:201604I
9/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
IPAK S2
单位Unit:mm
版本:201604I
10/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
DPAK
单位Unit:mm
编带 REEL
版本:201604I
11/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-262
单位Unit:mm
版本:201604I
12/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-263
单位Unit:mm
版本:201604I
13/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
单位Unit:mm
版本:201604I
14/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
单位Unit:mm
版本:201604I
15/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF-K1
单位Unit:mm
版本:201604I
16/18
R
JCS4N60B
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF-K2
单位Unit:mm
版本:201604I
17/18
R
JCS4N60B
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标,如有疑问请与公
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
联系方式
吉林华微电子股份有限公司
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
公司地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64678411
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
市场营销部
地址:吉林省吉林市深圳街99 号
Post Code: 132013
邮编:132013
Tel: 86-432-64675588
64675688
电话: 86-432-64675588
64675688
64678411
64678411
Fax: 86-432-64671533
传真: 86-432-64671533
版本:201604I
18/18
相关型号:
©2020 ICPDF网 联系我们和版权申明