JCS7HN65SC-O-S-N-B [JSMC]

Low gate charge;
JCS7HN65SC-O-S-N-B
型号: JCS7HN65SC-O-S-N-B
厂家: JILIN SINO-MICROELECTRONICS CO., LTD.    JILIN SINO-MICROELECTRONICS CO., LTD.
描述:

Low gate charge

文件: 总18页 (文件大小:1184K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N道增强型场效应晶体管  
N-CHANNEL MOSFET  
R
JCS7HN65C  
主要参数 MAIN CHARACTERISTICS  
封装 Package  
7.0 A  
650 V  
1.35  
ID  
VDSS  
Rdson-max  
(@Vgs=10V)  
Qg-typ  
32 nC  
APPLICATIONS  
用途  
z High frequency switching  
mode power supply  
z Electronic ballast  
z LED  
z 高频开关电源  
z 电子镇流器  
z LED 电源  
产品特性  
z低栅极电荷  
FEATURES  
zLow gate charge  
zLow Crss (typical 14pF )  
zFast switching  
zCrss (典型14pF)  
z开关速度快  
z产品全部经过雪崩测试  
zdv/dt 能力  
zRoHS 产品  
z100% avalanche tested  
zImproved dv/dt capability  
zRoHS product  
订货信息 ORDER MESSAGE  
无卤素  
Halogen  
Free  
器件重量  
Device  
订 货 型 号  
Order codes  
Marking  
Package  
Packaging  
Weight  
JCS7HN65VC-O-V-N-B  
JCS7HN65VC-O-V2-N-B  
JCS7HN65RC-O-R-N-B  
JCS7HN65RC-O-R-N-A  
JCS7HN65CC-O-C-N-B  
JCS7HN65FC-O-F-N-B  
JCS7HN65SC-O-S-N-B  
JCS7HN65SC-O-S-N-A  
JCS7HN65BC-O-B-N-B  
JCS7HN65V  
JCS7HN65V  
JCS7HN65R  
JCS7HN65R  
JCS7HN65C  
JCS7HN65F  
JCS7HN65S  
JCS7HN65S  
JCS7HN65B  
IPAK  
NO 条管 Tube  
NO 条管 Tube  
NO 条管 Tube  
NO 编带 Reel  
NO 条管 Tube  
NO 条管 Tube  
NO 条管 Tube  
NO 编带 Reel  
NO 条管 Tube  
NO 条管 Tube  
NO 条管 Tube  
0.35 g(typ)  
0.34 g(typ)  
0.30 g(typ)  
0.30 g(typ)  
2.15 g(typ)  
2.20 g(typ)  
1.37 g(typ)  
1.37 g(typ)  
1.71 g(typ)  
1.78 g(typ)  
1.78 g(typ)  
IPAK-S2  
DPAK  
DPAK  
TO-220C  
TO-220MF  
TO-263  
TO-263  
TO-262  
JCS7HN65FC-O-F2-N-B JCS7HN65F  
JCS7HN65FC-O-F1-N-B JCS7HN65F  
TO-220MF-K2  
TO-220MF-K1  
版本:201604I  
1/18  
R
JCS7HN65C  
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)  
数 值  
符 号  
Value  
Parameter  
Symbol  
JCS7HN65  
JCS7HN6  
5FC  
JCS7HN65  
FC-K1/K2  
Unit  
CC/SC/BC/VC/RC  
最高漏极-源极直流电压  
Drain-Source Voltage  
连续漏极电流  
VDSS  
ID  
650  
650  
V
7.0  
4.6  
7.0*  
4.6*  
A
A
T=25℃  
Drain Current  
-continuous T=100℃  
最大脉冲漏极电流1)  
Drain Current - pulsenote 1)  
最高栅源电压  
IDM  
28  
28*  
A
V
VGSS  
±30  
710  
7.0  
Gate-Source Voltage  
单脉冲雪崩能量2)  
Single Pulsed Avalanche  
Energynote 2)  
EAS  
mJ  
A
雪崩电流1)  
IAR  
Avalanche Currentnote 1)  
重复雪崩能量1)  
Repetitive Avalanche  
Energynote 1)  
EAR  
12.6  
mJ  
二极管反向恢复最大电压变  
化速率3Peak Diode  
Recovery dv/dtnote 3)  
dv/dt  
4.5  
V/ns  
W
PD  
120.0  
1.04  
54.34  
0.434  
43.9  
0.35  
耗散功率  
TC=25℃  
-Derate  
above 25℃  
Power Dissipation  
W/  
最高结温及存储温度  
Operating and Storage  
Temperature Range  
引线最高焊接温度  
TJTSTG  
-55+150  
Maximum Lead Temperature TL  
for Soldering Purposes  
300  
*漏极电流由最高结温限制  
*Drain current limited by maximum junction temperature  
版本:201604I  
2/18  
R
JCS7HN65C  
电特性 ELECTRICAL CHARACTERISTICS  
符 号  
测试条件  
最小 典型 最 大单 位  
Parameter  
关态特性 Off –Characteristics  
漏-源击穿电压  
Symbol  
Tests conditions  
Min Typ Max Units  
BVDSS  
ID=250μA, VGS=0V  
650  
-
-
-
-
V
Drain-Source Voltage  
击穿电压温度特性  
ΔBVDSS/Δ ID=250μA, referenced to  
Breakdown Voltage Temperature  
Coefficient  
0.64  
V/  
TJ  
25℃  
VDS=650V,VGS=0V,  
零栅压下漏极漏电流  
-
-
-
-
10 μA  
100 μA  
IDSS  
TC=25℃  
Zero Gate Voltage Drain Current  
VDS=520V,  
TC=125℃  
正向栅极体漏电流  
Gate-body leakage current,  
forward  
IGSSF  
VDS=0V, VGS =30V  
-
-
-
-
100 nA  
-100 nA  
反向栅极体漏电流  
Gate-body leakage current,  
reverse  
IGSSR  
VDS=0V, VGS =-30V  
通态特On-Characteristics  
阈值电压  
VGS(th)  
RDS(ON)  
gfs  
VDS = VGS  
,
ID=250μA  
2.0  
-
-
4.0  
V
S
Gate Threshold Voltage  
静态导通电阻  
Static Drain-Source  
On-Resistance  
VGS =10V , ID=3.5A  
1.05 1.35  
正向跨导  
VDS = 40V, ID=7.0Anote 4-  
5.6  
-
Forward Transconductance  
动态特Dynamic Characteristics  
输入电容  
VDS=25V,  
GS =0V,  
f=1.0MHZ  
Ciss  
Coss  
Crss  
-
1100 1600 pF  
251 300 pF  
14 20 pF  
Input capacitance  
输出电容  
V
-
-
Output capacitance  
反向传输电容  
Reverse transfer capacitance  
版本:201604I  
3/18  
R
JCS7HN65C  
电特性 ELECTRICAL CHARACTERISTICS  
开关特Switching Characteristics  
延迟时Turn-On delay time  
上升时Turn-On rise time  
延迟时Turn-Off delay time  
下降时Turn-Off Fall time  
栅极电荷总Total Gate Charge  
栅-源电Gate-Source charge  
栅-漏电Gate-Drain charge  
td(on)  
tr  
VDD=325V,ID=7A,RG=25Ω  
note 45)  
-
-
-
-
-
-
-
11 31 ns  
35 80 ns  
46 95 ns  
40 92 ns  
32 41 nC  
td(off)  
tf  
V
DS =520V ,  
ID=7A  
GS =10V note 45)  
Qg  
Qgs  
Qgd  
6
-
-
nC  
nC  
V
15  
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings  
正向最大连续电流  
Maximum Continuous Drain  
-Source Diode Forward Current  
正向最大脉冲电流  
IS  
-
-
-
-
-
-
7.0  
28  
A
A
V
Maximum Pulsed Drain-Source  
Diode Forward Current  
正向压降  
ISM  
Drain-Source Diode Forward  
Voltage  
VSD  
VGS=0V,  
IS=7.0A  
1.4  
反向恢复时间  
trr  
-
-
345  
3.2  
-
-
ns  
Reverse recovery time  
反向恢复电荷  
VGS=0V, IS=7.0A  
dIF/dt=100A/μs  
(note 4)  
Qrr  
μC  
Reverse recovery charge  
热特THERMAL CHARACTERISTIC  
最大 Max  
符 号  
单 位  
JCS7HN65VC JCS7HN65FC JCS7HN65FC  
Parameter  
Symbol  
Unit  
/RC/CC/SC/BC TO-220MF  
TO-220MF-K1/K2  
结到管壳的热阻  
Thermal Resistance,  
Junction to Case  
结到环境的热阻  
Rth(j-c)  
Rth(j-A)  
1.04  
62.5  
2.3  
2.845  
/W  
/W  
Thermal Resistance,  
Junction to Ambient  
注释:  
35.67  
40.25  
Notes:  
1Pulse width limited by maximum junction temperature  
1:脉冲宽度由最高结温限制  
2 L=27mH,  
TJ=25  
IAS=7.0A, VDD=50V, RG=25 ,Starting  
2L=27mH, IAS=7.0A, VDD=50V, RG=25 ,起始结  
TJ=25℃  
3ISD7.0A,di/dt300A/μs,VDDBVDSS, Starting TJ=25℃  
4Pulse TestPulse Width 300μs,Duty Cycle2%  
5Essentially independent of operating temperature  
3 ISD7.0A,di/dt300A/μs,VDDBVDSS, 始结温  
TJ=25℃  
4:脉冲测试:脉冲宽度300μs,占空比2%  
5:基本与工作温度无关  
版本:201604I  
4/18  
R
JCS7HN65C  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
Transfer Characteristics  
On-Region Characteristics  
VGS  
Top  
15V  
10V  
8V  
7V  
10  
10  
6.5V  
6V  
5.5V  
Bottom 5V  
150  
25℃  
1
Notes  
1. 250μs pulse test  
2. TC=25℃  
Notes  
1.250μs pulse test  
2.VDS=40V  
1
0.1  
2
4
6
8
10  
1
10  
VGS [V]  
VDS [V]  
On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Body Diode Forward Voltage Variation  
vs. Source Current and Temperature  
10  
1.2  
VGS=10V  
25  
VGS=20V  
1.0  
0.8  
1
150℃  
Notes:  
1. 250μs pulse test  
2. VGS =0V  
Note Tj=25℃  
0.1  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
1
2
3
4
5
6
VSD [V]  
ID [A]  
Capacitance Characteristics  
Gate Charge Characteristics  
版本:201604I  
5/18  
R
JCS7HN65C  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
On-Resistance Variation  
vs. Temperature  
Breakdown Voltage Variation  
vs. Temperature  
1.2  
1.1  
1.0  
0.9  
Notes  
1. VGS=0V  
2. ID=250μA  
0.8  
-75  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tj []  
Maximum Safe Operating Area  
For JCS7HN65CC/SC/BC/RC/VC  
Maximum Safe Operating Area  
For JCS7HN65FC(TO-220MF)  
Maximum Safe Operating Area  
For JCS7HN65FC(TO-220MF-K1/K2)  
版本:201604I  
6/18  
R
JCS7HN65C  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)  
Maximum Drain Current  
vs. Case Temperature  
Avalanche Energy  
vs. Temperature  
Transient Thermal Response Curve  
For JCS7HN65CB/SB/BB/RC/VC  
Transient Thermal Response Curve  
For JCS7HN65FC  
版本:201604I  
7/18  
R
JCS7HN65C  
Transient Thermal Response Curve  
For JCS7HN65FC(TO-220MF-K1/K2)  
版本:201604I  
8/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
IPAK  
Unitmm  
版本:201604I  
9/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
IPAK-S2  
Unitmm  
版本:201604I  
10/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
DPAK  
Unitmm  
编带 REEL  
版本:201604I  
11/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220C  
Unitmm  
版本:201604I  
12/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220MF  
Unitmm  
版本:201604I  
13/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-262  
Unitmm  
版本:201604I  
14/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-263  
Unitmm  
编带 REEL  
版本:201604I  
15/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220MF-K2  
Unitmm  
版本:201604I  
16/18  
R
JCS7HN65C  
外形尺寸 PACKAGE MECHANICAL DATA  
TO-220MF-K1  
Unitmm  
版本:201604I  
17/18  
R
JCS7HN65C  
注意事项  
NOTE  
1.吉林华微电子股份有限公司的产品销售分  
为直销和销售代理,无论哪种方式,订货  
时请与公司核实。  
1. Jilin Sino-microelectronics co., Ltd sales its  
product either through direct sales or sales  
agent , thus, for customers, when ordering ,  
please check with our company.  
2.购买时请认清公司商标,如有疑问请与公  
2. We strongly recommend customers check  
carefully on the trademark when buying our  
product, if there is any question, please  
don’t be hesitate to contact us.  
司本部联系。  
3.在电路设计时请不要超过器件的绝对最大  
3. Please do not exceed the absolute  
maximum ratings of the device when circuit  
designing.  
额定值,否则会影响整机的可靠性。  
4.本说明书如有版本变更不另外告知  
4. Jilin Sino-microelectronics co., Ltd reserves  
the right to make changes in this  
specification sheet and is subject to  
change without prior notice.  
CONTACT  
JILIN SINO-MICROELECTRONICS CO., LTD.  
联系方式  
吉林华微电子股份有限公司  
ADD: No.99 Shenzhen Street, Jilin City, Jilin  
Province, China.  
公司地址:吉林省吉林市深圳99 号  
Post Code: 132013  
邮编:132013  
Tel86-432-64678411  
总机:86-432-64678411  
传真:86-432-64665812  
网址:www.hwdz.com.cn  
Fax86-432-64665812  
Web Sitewww.hwdz.com.cn  
MARKET DEPARTMENT  
ADD: No.99 Shenzhen Street, Jilin City, Jilin  
Province, China.  
市场营销部  
地址:吉林省吉林市深圳99 号  
Post Code: 132013  
邮编:132013  
Tel:  
86-432-64675588  
64675688  
电话: 86-432-64675588  
64675688  
64678411  
64678411  
Fax: 86-432-64671533  
传真: 86-432-64671533  
版本:201604I  
18/18  

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