BAW56C [KEC]
SILICON EPITAXIAL PLANAR DIODE;
| 型号： | BAW56C |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE 局域网 |
| 文件： | 总2页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BAW56C
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
E
L
B
L
· Small Package : SOT-23(1).
DIM MILLIMETERS
_
+
A
B
C
D
E
2.90 0.1
2
3
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
J
0.10
K
L
0.00 ~ 0.10
0.55
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
M
N
0.20 MIN
SYMBOL
VRM
VR
RATING
85
UNIT
V
1.00+0.20/-0.10
M
Maximum (Peak) Reverse Voltage
Reverse Voltage
3
80
V
1. CATHODE
2. CATHODE
3. ANODE
1
2
IF
Continuous Forward Current
Surge Current (10ms)
200
mA
A
2
1
IFSM
PD
2
Power Dissipation
225*
150
mW
℃
Tj
Junction Temperature
SOT-23(1)
Tstg
Storage Temperature Range
-55∼ 150
℃
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
Marking
Lot No.
Type Name
H6C
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
TYP.
MAX.
-
UNIT
V
IR=100uA
80
-
-
VF(1)
VF(2)
VF(3)
IR
IF=1mA
0.6
0.65
0.8
1.25
0.5
3
IF=10mA
Forward Voltage
-
0.72
V
IF=150mA
VR=80V
-
-
-
-
Reverse Current
-
μA
CT
VR=0, f=1MHz
Total Capacitance
-
pF
2015. 5. 12
Revision No : 0
1/2
BAW56C
IF - VF
IR - VR
10 3
10 2
10
10
1
Ta=100 C
Ta=75 C
Ta=50 C
10-1
10-2
10-3
1
Ta=25 C
10-1
10-2
0
0
20
40
60
80
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
REVERSE VOLTAGE V (V)
R
CT - VR
2.5
2.0
1.5
1.0
0.5
0
f=1MHz
Ta=25 C
0.2
1
3
10
30
100 200
REVERSE VOLTAGE V (V)
R
2015. 5. 12
Revision No : 0
2/2
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