KF11N50F [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;型号: | KF11N50F |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总7页 (文件大小:401K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KF11N50P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF11N50P
A
O
C
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
F
E
I
DIM MILLIMETERS
G
_
A
B
C
D
E
F
9.9 0.2
+
B
15.95 MAX
1.3+0.1/-0.05
Q
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS= 500V, ID= 11A
· Drain-Source ON Resistance :
RDS(ON)=0.52Ω (Max) @VGS = 10V
· Qg(typ.) = 26nC
K
P
3.7
G
H
I
M
N
0.5+0.1/-0.05
1.5
L
J
_
J
13.08+ 0.3
K
L
M
N
O
P
D
1.46
_
1.4 + 0.1
H
N
_
1.27+ 0.1
_
2.54+ 0.2
MAXIMUM RATING (Tc=25℃)
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
2. DRAIN
KF11N50P
KF11N50F
3. SOURCE
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
500
V
V
±30
TO-220AB
11
7
11*
7*
ID
Drain Current
@TC=100℃
A
KF11N50F
IDP
Pulsed (Note1)
33
33*
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
400
6.6
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
E
_
A
B
C
D
E
10.16 0.2
+
_
15.87 0.2
+
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
2.54 0.2
+
_
0.8 0.1
+
178
46.3
0.37
W
W/℃
℃
Tc=25℃
_
+
3.18
0.1
Drain Power
Dissipation
PD
_
3.3 0.1
+
F
1.43
Derate above 25℃
_
12.57 0.2
+
G
H
J
L
M
_
0.5 0.1
+
R
Tj
Maximum Junction Temperature
Storage Temperature Range
150
_
13.0 0.5
+
_
K
L
3.23 0.1
+
Tstg
D
-55∼ 150
℃
1.47 MAX
1.47 MAX
M
N
O
Q
R
Thermal Characteristics
N
N
H
_
2.54 0.2
+
_
6.68 0.2
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
0.7
62.5
2.7
℃/W
℃/W
_
4.7
+
_
0.2
Thermal Resistance, Junction-to-
Ambient
2.76 0.2
+
1
2
3
62.5
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
*Single Gauge Lead Frame
TO-220IS (1)
EQUIVALENT CIRCUIT
D
G
S
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Revision No : 1
1/7
KF11N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
ID=250μA, VGS=0V
500
-
-
-
V
V/℃
μA
V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
-
-
0.55
IDSS
Vth
VDS=500V, VGS=0V,
VDS=VGS, ID=250μA
VGS=±30V, VDS=0V
VGS=10V, ID=5.5A
-
10
2.5
-
-
-
4.5
IGSS
nA
Ω
±100
0.52
RDS(ON)
-
0.42
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
26
6.5
9.1
45
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=11A
VGS=10V
Gate-Source Charge
nC
ns
pF
A
(Note4,5)
(Note4,5)
Gate-Drain Charge
Turn-on Delay time
VDD=250V
ID=11A
Turn-on Rise time
35
td(off)
tf
Turn-off Delay time
100
35
RG=25Ω
Turn-off Fall time
Ciss
Coss
Crss
Input Capacitance
1400
170
12
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISP
VSD
trr
-
-
-
-
-
-
-
11
44
1.4
-
VGS<Vth
IS=11A, VGS=0V
-
V
ns
360
4.4
IS=11A, VGS=0V,
dIs/dt=100A/μs
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=6.2mH, IS=11A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 11A, dI/dt≤ 200A/μs, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300μs, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF11N50
KF11N50
2
101
F
2
101
P
1
2
PRODUCT NAME
LOT NO
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Revision No : 1
2/7
KF11N50P/F
Fig1. I - V
Fig2. I - V
D GS
D
DS
102
100
10
V
=20V
DS
V
=10V, 7V
GS
101
100
10-1
100 C
V
=5V
25 C
GS
1
0.1
0.1
10
Drain - Source Voltage VDS (V)
3
4
5
6
7
8
9
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DS(ON) D
DSS
j
1.2
1.1
1.0
0.9
0.8
0.8
0.6
0.4
0.2
VGS = 0V
IDS = 250
V
=7V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
5
10
Drain Current ID (A)
15
20
Junction Temperature Tj (
)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
101
100
10-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
= 5.5A
GS
DS
100 C
25 C
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
)
C
Source - Drain Voltage VSD
j
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Revision No : 1
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KF11N50P/F
Fig 7. C - V
DS
Fig8. Q - V
g
GS
104
103
102
101
12
10
8
ID=11A
C
C
V
= 400V
iss
DS
6
oss
4
2
C
rss
40
0
5
15
20
35
40
0
10
25
30
(nC)
0
10
20
30
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig10. Safe Operation Area
Fig9. Safe Operation Area
(KF11N50F)
(KF11N50P)
102
101
102
101
100
10-1
10-2
10µs
10µs
100µs
100µs
1ms
1ms
100
10-1
10-2
Operation in this
area is limited by RDS(ON)
10ms
10ms
Operation in this
area is limited by R
DS(ON)
DC
DC
T = 25
T = 25
C
C
c
j
c
C
T = 150
C
T = 150
j
Single pulse
Single pulse
100
101
102
103
102
103
100
101
Drain - Source Voltage V
(V)
Drain - Source Voltage V
(V)
DS
DS
Fig11. I - T
D
j
14
12
10
8
6
4
2
0
25
50
75
125
)
150
100
Junction Temperature T
(
C
j
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Revision No : 1
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KF11N50P/F
Fig12. Transient Thermal Response Curve
(KF11N50P)
100
10-1
10-2
Duty=0.5
0.2
0.1
P
DM
0.05
t
1
0.02
t
2
- Rth(j-c) = 0.7 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF11N50F)
101
100
Duty=0.5
0.2
P
0.1
DM
t
0.05
1
10-1
10-2
t
0.02
2
- Rth(j-c) = 2.7 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
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Revision No : 1
5/7
KF11N50P/F
Fig14. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig15. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DD
DSS
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig16. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
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Revision No : 1
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KF11N50P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
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Revision No : 1
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