KF5N50FSA [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
| 型号： | KF5N50FSA |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：720K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KF5N50FZA/FSA
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
· VDSS= 500V, ID= 5.0A
· Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V
· Qg(typ) = 12nC
· trr(typ) = 150ns (KF5N50FSA)
· trr(typ) = 300ns (KF5N50FZA)
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
500
UNIT
V
VGSS
V
±30
5.0*
ID
Drain Current
@TC=100℃
2.9*
A
IDP
Pulsed (Note1)
13*
Single Pulsed Avalanche Energy
(Note 2)
EAS
270
8.6
20
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
37.9
0.30
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
PD
Derate above 25℃
Tj
Maximum Junction Temperature
Storage Temperature Range
150
Tstg
-55∼ 150
℃
Thermal Characteristics
RthJC
RthJA
Thermal Resistance, Junction-to-Case
3.3
℃/W
℃/W
Thermal Resistance, Junction-to-
Ambient
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2010. 8. 25
Revision No : 0
1/6
KF5N50FZA/FSA
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
500
-
-
-
V
V/℃
㎂
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
-
-
0.55
IDSS
Vth
VDS=500V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±25V, VDS=0V
VGS=10V, ID=2.5A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
-
10
2.5
-
-
-
4.5
±10
1.4
IGSS
㎂
Ω
RDS(ON)
-
1.15
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
12
2.4
5.4
22.5
29
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=5A
VGS=10V
Gate-Source Charge
Gate-Drain Charge
nC
ns
(Note4,5)
(Note4,5)
Turn-on Delay time
Turn-on Rise time
VDD=250V
RL=50Ω
td(off)
tf
Turn-off Delay time
Turn-off Fall time
58
RG=25Ω
18
Ciss
Coss
Crss
Input Capacitance
430
71
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
7.5
IS
-
-
-
-
-
-
-
-
-
5
20
1.4
-
VGS<Vth
A
V
ISP
VSD
IS=5A, VGS=0V
-
KF5N50FZA
KF5N50FSA
KF5N50FZA
KF5N50FSA
300
150
4.8
0.42
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
-
IS=5A, VGS=0V,
dIs/dt=100A/㎲
-
Qrr
μC
-
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
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