KF5N60F [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应型号: | KF5N60F |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总7页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KF5N60P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N60P
A
O
C
This planar stripe MOSFET has better characteristics, such as fast
switching time,low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
F
E
I
DIM MILLIMETERS
G
Q
_
9.9 + 0.2
A
B
C
D
E
F
B
15.95 MAX
1.3+0.1/-0.05
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS= 600V, ID= 4.5A
K
P
3.7
G
H
I
· Drain-Source ON Resistance : RDS(ON)=2.0Ω @VGS = 10V
· Qg(typ) = 12nC
M
N
0.5+0.1/-0.05
1.5
L
J
_
13.08+ 0.3
J
K
L
M
N
O
P
D
1.46
_
1.4 + 0.1
H
N
_
1.27+ 0.1
_
2.54+ 0.2
MAXIMUM RATING (Ta=25℃)
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
2. DRAIN
3. SOURCE
KF5N60P
KF5N60F
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
600
V
V
±30
TO-220AB
4.5
2.7
13
4.5*
2.7*
13*
ID
Drain Current
@TC=100℃
A
KF5N60F
IDP
Pulsed (Note1)
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
140
3.5
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
E
_
10.16 0.2
+
A
B
C
D
E
Peak Diode Recovery dv/dt
(Note 3)
_
15.87 0.2
+
dv/dt
V/ns
_
2.54 0.2
+
_
0.8 0.1
+
83
38
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
_
+
3.18
0.1
PD
_
3.3 0.1
+
F
0.67
0.3
Derate above 25℃
_
G
H
J
12.57 0.2
+
L
M
_
Tj
0.5 0.1
Maximum Junction Temperature
Storage Temperature Range
150
+
R
_
13.0 0.5
+
Tstg
_
-55∼ 150
℃
K
L
3.23 0.1
+
D
1.47 MAX
1.47 MAX
Thermal Characteristics
M
N
O
Q
R
N
N
H
_
2.54 0.2
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
1.5
3.3
62.5
℃/W
℃/W
_
6.68 0.2
+
_
4.7
+
_
0.2
Thermal Resistance, Junction-to-
Ambient
62.5
2.76 0.2
+
1. GATE
2. DRAIN
3. SOURCE
1
2
3
* : Drain current limited by maximum junction temperature.
* Single Gauge Lead Frame
PIN CONNECTION
(KF5N60P, KF5N60F)
D
TO-220IS (1)
G
S
2010. 11. 4
Revision No : 0
1/7
KF5N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
600
-
-
-
V
V/℃
㎂
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
-
-
0.61
IDSS
Vth
VDS=600V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±30V, VDS=0V
VGS=10V, ID=2.25A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
-
-
10
2.5
-
4.5
±100
2.0
V
IGSS
-
nA
RDS(ON)
-
1.7
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
11
2.8
4.5
15
-
-
-
-
-
-
-
-
-
-
VDS=480V, ID=4.5A
VGS=10V
Gate-Source Charge
Gate-Drain Charge
nC
(Note4,5)
(Note4,5)
Turn-on Delay time
VDD=300V
ID=4.5A
RG=25Ω
Turn-on Rise time
16
ns
pF
A
td(off)
tf
Turn-off Delay time
Turn-off Fall time
30
15
Ciss
Coss
Crss
Input Capacitance
520
60
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
5.5
IS
ISP
VSD
trr
-
-
-
-
-
-
-
4.5
18
1.4
-
VGS<Vth
IS=4.5A, VGS=0V
-
V
ns
270
1.8
IS=4.5A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.7mH, IS=4.5A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 4.5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N60
KF5N60
2
001
F
2
001
P
1
2
PRODUCT NAME
LOT NO
2010. 11. 4
Revision No : 0
2/7
KF5N60P/F
Fig1. I - V
D
Fig2. I - V
D
GS
DS
100
10
V
=30V
DS
101
100
10-1
V
=10V
GS
V
=7V
GS
TC=100 C
25 C
V
=5V
GS
1
0.1
0.1
10
Drain - Source Voltage VDS (V)
2
4
6
8
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DSS
j
DS(ON)
D
1.2
1.1
1.0
0.9
0.8
6.0
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
IDS = 250
V
=6V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
2
4
6
8
10
12
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
101
100
10-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
GS
= 2.5A
DS
TC=100 C
25 C
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
j
)
C
Source - Drain Voltage VSD
2010. 11. 4
Revision No : 0
3/7
KF5N60P/F
Fig 7. C - V
DS
Fig8. Q - V
g
GS
12
10
8
1000
100
10
ID=4.5A
C
C
iss
V
= 480V
DS
6
oss
4
2
C
rss
1
0
2
6
8
14
16
0
4
10
12
(nC)
0
5
10
15
20
25
30
35
40
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
Fig10. Safe Operation Area
(KF5N60P)
(KF5N60F)
102
101
100
10-1
102
102
101
100
10-1
102
Operation in this
area is limited by RDS(ON)
Operation in this
area is limited by RDS(ON)
10µs
10µs
100µs
100µs
1ms
10ms
DC
1ms
10ms
DC
T = 25
T = 25
C
c
C
T = 150
j
C
c
C
T = 150
j
Single pulse
Single pulse
102
103
102
103
100
101
100
101
Drain - Source Voltage V
(V)
Drain - Source Voltage V
(V)
DS
DS
Fig11. I - T
D
j
6
5
4
3
2
1
0
25
50
75
100
125
)
150
Junction Temperature T
(
C
j
2010. 11. 4
Revision No : 0
4/7
KF5N60P/F
Fig12. Transient Thermal Response Curve
(KF5N60P)
10-1
100
Duty=0.5
0.2
0.1
P
DM
0.05
t
10-1
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF5N60F)
10-1
Duty=0.5
100
0.2
0.1
0.05
P
DM
t
10-1
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2010. 11. 4
Revision No : 0
5/7
KF5N60P/F
Fig14. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig15. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DSS
DD
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig16. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2010. 11. 4
Revision No : 0
6/7
KF5N60P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2010. 11. 4
Revision No : 0
7/7
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