KF5N50 [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;
| 型号： | KF5N50 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KF5N50DR/DS
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
A
C
K
DIM MILLIMETERS
L
D
B
_
6.60 + 0.20
A
B
C
D
E
_
6.10+0.20
_
5.34 + 0.30
_
0.70+0.20
_
2.70 + 0.15
FEATURES
_
2.30+0.10
F
0.96 MAX
0.90 MAX
G
H
J
· VDSS= 500V, ID= 4.3A
H
J
_
1.80+0.20
· Drain-Source ON Resistance : RDS(ON)=1.4Ω (Max) @VGS = 10V
· Qg(typ) = 12nC
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
0.50+0.10
F
F
M
M
N
· trr(typ) = 150ns
0.70 MIN
℃
)
MAXIMUM RATING (Tc=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
1
2
3
1. GATE
2. DRAIN
3. SOURCE
SYMBOL
VDSS
RATING
500
UNIT
V
VGSS
V
±30
4.3
ID
DPAK (1)
Drain Current
@TC=100℃
2.7
A
IDP
Pulsed (Note1)
13
Single Pulsed Avalanche Energy
(Note 2)
EAS
270
8.6
20
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
59.5
0.48
W
W/℃
℃
Tc=25℃
Derate above 25℃
Drain Power
Dissipation
PD
Tj
Maximum Junction Temperature
Storage Temperature Range
150
Tstg
-55∼ 150
℃
Thermal Characteristics
RthJC
RthJA
Thermal Resistance, Junction-to-Case
2.1
℃/W
℃/W
Thermal Resistance, Junction-to-
Ambient
110
PIN CONNECTION
(KF5N50DR)
(KF5N50DS)
D
D
G
G
S
S
2008. 12. 3
Revision No : 0
1/6
KF5N50DR/DS
℃
)
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
500
-
-
-
V
V/℃
㎂
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
-
-
0.55
IDSS
Vth
VDS=500V, VGS=0V,
Drain Cut-off Current
Gate Threshold Voltage
-
10
VDS=VGS, ID=250㎂
2.0
-
-
4.0
V
KF5N50DR VGS=±30V, VDS=0V
-
-
nA
㎂
±100
±10
1.4
IGSS
Gate Leakage Current
KF5N50DS
VGS=±25V, VDS=0V
-
RDS(ON)
VGS=10V, ID=2.5A
Drain-Source ON Resistance
Dynamic
-
1.10
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
-
-
-
-
-
-
-
-
-
-
-
12
3.4
4.5
23
-
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=5A
VGS=10V
nC
ns
(Note4,5)
(Note4,5)
VDD=250V
RL=50Ω
17
td(off)
tf
40
RG=25Ω
13
KF5N50DR
KF5N50DS
510
440
69
VDS=25V, VGS=0V,
f=1.0MHz
Ciss
Input Capacitance
pF
A
Coss
Crss
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
6
IS
ISP
VSD
trr
-
-
-
-
-
-
-
5
20
1.4
-
VGS<Vth
IS=5A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
V
ns
150
0.42
IS=5A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N50
KF5N50
2
2
801
801
DR
DS
1
2
PRODUCT NAME
LOT NO
2008. 12. 3
Revision No : 0
2/6
KF5N50DR/DS
Fig1. I - V
D
Fig2. I - V
D GS
DS
100
10
V
=30V
DS
101
V
=10V
GS
V
=7V
GS
TC=100 C
25 C
100
V
=5V
GS
1
10-1
0.1
0.1
10
Drain - Source Voltage VDS (V)
2
4
6
8
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R - I
DS(ON) D
DSS
j
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 0V
IDS = 250
V
=6V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
2
4
6
8
10
12
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
101
100
10-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
GS
= 2.5A
DS
TC=100 C
25 C
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
j
)
C
Source - Drain Voltage VSD
2008. 12. 3
Revision No : 0
3/6
KF5N50DR/DS
Fig 7. C - V
DS
Fig8. Q - V
g
GS
12
1000
100
10
ID=5A
10
8
C
C
iss
V
= 400V
DS
V
= 250V
DS
oss
6
V
= 100V
DS
4
C
rss
2
1
0
2
6
8
14
16
0
4
10
g
12
0
5
10
15
20
25
30
35
40
Gate - Charge
Q
(nC)
Drain - Source Voltage VDS (V)
Fig10. I - T
D
Fig9. Safe Operation Area
j
(KF5N50D, KF5N50DZ)
102
101
100
10-1
102
6
5
4
3
2
1
0
Operation in this
area is limited by RDS(ON)
10µs
100µs
1ms
10ms
100ms
DC
T = 25
C
c
C
T = 150
j
Single pulse
102
103
50
75
100
125
150
100
101
0
25
Drain - Source Voltage V
(V)
DS
Junction Temperature T
(
)
C
j
Fig11. Transient Thermal Response Curve
Duty=0.5
100
0.2
0.1
0.05
P
DM
10-1
t
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2008. 12. 3
Revision No : 0
4/6
KF5N50DR/DS
Fig12. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig13. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DSS
DD
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig14. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2008. 12. 3
Revision No : 0
5/6
KF5N50DR/DS
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2008. 12. 3
Revision No : 0
6/6
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