KF5N60I [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
| 型号： | KF5N60I |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KF5N60D/I
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
A
C
K
DIM MILLIMETERS
L
D
B
_
6.60 + 0.20
A
B
C
D
E
_
6.10+0.20
_
5.34 + 0.30
_
0.70+0.20
_
2.70 + 0.15
FEATURES
_
2.30+0.10
F
0.96 MAX
0.90 MAX
G
H
J
· VDSS= 600V, ID= 3.5A
H
J
_
1.80+0.20
· Drain-Source ON Resistance : RDS(ON)=2.0Ω (Max) @VGS = 10V
· Qg(typ) = 11nC
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
0.50+0.10
F
F
M
M
N
0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
600
UNIT
V
VGSS
V
±30
3.5
DPAK (1)
ID
Drain Current
@TC=100℃
2.2
A
IDP
KF5N60I
Pulsed (Note1)
13
A
C
H
Single Pulsed Avalanche Energy
(Note 2)
EAS
J
140
3.5
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
Peak Diode Recovery dv/dt
(Note 3)
_
6.6 0.2
+
A
B
C
D
E
F
dv/dt
V/ns
_
6.1 0.2
+
M
_
5.34 0.3
+
59.5
0.48
W
W/℃
℃
Tc=25℃
P
Drain Power
Dissipation
_
0.7 0.2
+
PD
N
_
9.3 0.3
+
Derate above 25℃
_
2.3 0.2
+
_
0.76 0.1
+
Tj
Maximum Junction Temperature
Storage Temperature Range
150
G
H
J
G
_
2.3 0.1
+
Tstg
-55∼ 150
℃
_
L
0.5 0.1
+
F
F
_
K
L
M
N
P
1.8 0.2
+
Thermal Characteristics
_
+
0.5
0.1
_
1.0 0.1
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
2.1
℃/W
℃/W
0.96 MAX
_
1
2
3
1. GATE
2. DRAIN
3. SOURCE
1.02 0.3
+
Thermal Resistance, Junction-to-
Ambient
110
PIN CONNECTION
IPAK(1)
D
G
S
2011. 1. 26
Revision No : 0
1/6
KF5N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
600
-
-
-
V
V/℃
㎂
-
-
0.61
IDSS
Vth
VDS=600V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±30V, VDS=0V
VGS=10V, ID=1.75A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
-
-
10
2.5
-
4.5
±100
2.0
V
IGSS
-
nA
RDS(ON)
-
1.7
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
11
2.8
45
-
-
-
-
-
-
-
-
-
-
VDS=480V, ID=4.5A
Gate-Source Charge
Gate-Drain Charge
nC
VGS=10V
(Note4,5)
(Note4,5)
Turn-on Delay time
Turn-on Rise time
15
VDD=300V
ID=4.5A
RG=25Ω
16
ns
td(off)
tf
Turn-off Delay time
Turn-off Fall time
30
15
Ciss
Coss
Crss
Input Capacitance
520
60
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
pF
5.5
IS
ISP
VSD
trr
Continuous Source Current
Pulsed Source Current
-
-
-
-
-
-
-
4.5
18
1.4
-
VGS<Vth
A
IS=3.5A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
V
ns
270
1.8
IS=4.5A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.7mH, IS=4.5A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 4.5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N60
001
KF5N60
2
I
2
001
D
1
2
PRODUCT NAME
LOT NO
2011. 1. 26
Revision No : 0
2/6
KF5N60D/I
Fig1. I - V
D
Fig2. I - V
D
GS
DS
100
10
V
=30V
DS
101
100
10-1
V
=10V
GS
V
=7V
GS
TC=100 C
25 C
V
=5V
GS
1
0.1
0.1
10
Drain - Source Voltage VDS (V)
2
4
6
8
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DSS
j
DS(ON)
D
1.2
1.1
1.0
0.9
0.8
6.0
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
IDS = 250
V
=6V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
2
4
6
8
10
12
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
101
100
10-1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
GS
= 2.5A
DS
TC=100 C
25 C
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
j
)
C
Source - Drain Voltage VSD
2011. 1. 26
Revision No : 0
3/6
KF5N60D/I
Fig 7. C - V
DS
Fig8. Q - V
g
GS
12
10
8
1000
100
10
ID=4.5A
C
C
iss
V
= 480V
DS
6
oss
4
2
C
rss
1
0
2
6
8
14
16
0
4
10
12
(nC)
0
5
10
15
20
25
30
35
40
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
Fig10. I - T
D
j
102
101
100
10-1
102
6
5
4
3
2
1
0
Operation in this
area is limited by RDS(ON)
10µs
100µs
1ms
10ms
DC
T = 25
C
c
C
T = 150
j
Single pulse
102
103
50
75
100
125
150
100
101
0
25
Drain - Source Voltage V
(V)
DS
Junction Temperature T
(
)
C
j
Fig11. Transient Thermal Response Curve
Duty=0.5
100
0.2
0.1
0.05
P
DM
10-1
t
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2011. 1. 26
Revision No : 0
4/6
KF5N60D/I
Fig12. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig13. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DSS
DD
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig14. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2011. 1. 26
Revision No : 0
5/6
KF5N60D/I
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2011. 1. 26
Revision No : 0
6/6
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