KF5N65P_15 [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;型号: | KF5N65P_15 |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总7页 (文件大小:403K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KF5N65P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N65P
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
O
C
F
DIM MILLIMETERS
E
I
_
G
A
B
C
D
E
F
9.9 + 0.2
15.95 MAX
B
1.3+0.1/-0.05
Q
_
0.8+ 0.1
_
3.6 0.2
+
FEATURES
_
2.8 + 0.1
K
P
3.7
G
H
I
· VDSS= 650V, ID= 5A
0.5+0.1/-0.05
1.5
M
N
L
· Drain-Source ON Resistance : RDS(ON)=1.75Ω (Max) @VGS = 10V
· Qg(typ) = 14.5nC
J
_
J
13.08+ 0.3
D
K
L
M
N
O
P
1.46
_
H
1.4 + 0.1
N
_
1.27+ 0.1
_
2.54+ 0.2
_
+
4.5 0.2
_
+
2.4 0.2
_
9.2 + 0.2
Q
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25℃)
RATING
KF5N65P KF5N65F
CHARACTERISTIC
SYMBOL
UNIT
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
650
V
V
±30
TO-220AB
5
5*
ID
Drain Current
@TC=100℃
3.0
3.0*
A
KF5N65F
IDP
Pulsed (Note1)
15
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
150
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
DIM MILLIMETERS
E
EAR
3.8
4.5
_
10.16 0.2
+
A
B
C
D
E
_
15.87 0.2
+
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
2.54 0.2
+
_
0.8 0.1
+
100
0.8
41.7
0.33
W
W/℃
℃
Tc=25℃
_
+
Drain Power
Dissipation
3.18
0.1
PD
_
3.3 0.1
+
_
12.57 0.2
+
F
Derate above 25℃
G
H
J
L
M
N
_
0.5 0.1
+
R
Tj
Maximum Junction Temperature
Storage Temperature Range
150
_
13.0 0.5
+
_
K
L
3.23 0.1
+
Tstg
-55∼ 150
℃
D
1.47 MAX
1.47 MAX
M
N
O
Q
R
Thermal Characteristics
N
H
_
2.54 0.2
+
RthJC
RthJA
_
Thermal Resistance, Junction-to-Case
1.25
62.5
3.0
℃/W
℃/W
6.68 0.2
+
_
4.7
+
_
0.2
Thermal Resistance, Junction-to-
Ambient
1. GATE
2.76 0.2
+
62.5
1
2
3
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
D
G
S
2014. 12. 16
Revision No : 1
1/7
KF5N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
650
-
0.7
-
-
-
V
V/℃
㎂
-
-
IDSS
Vth
VDS=650V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±30V, VDS=0V
VGS=10V, ID=2.5A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
10
2.5
-
-
4.5
±100
1.75
V
IGSS
-
nA
RDS(ON)
-
1.5
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
14.5
3.0
5.8
35
-
-
-
-
-
-
-
-
-
-
VDS=520V, ID=5.0A
Gate-Source Charge
Gate-Drain Charge
nC
VGS=10V
(Note4,5)
(Note4,5)
Turn-on Delay time
Turn-on Rise time
VDD=325V
ID=5.0A
RG=25Ω
35
ns
td(off)
tf
Turn-off Delay time
Turn-off Fall time
65
25
Ciss
Coss
Crss
Input Capacitance
720
72
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
pF
7.2
IS
ISP
VSD
trr
Continuous Source Current
Pulsed Source Current
-
-
-
-
-
-
-
5
20
1.4
-
VGS<Vth
A
IS=5.0A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
V
ns
300
1.8
IS=5.0A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.4mH, IS=5.0A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 4.5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N65
KF5N65
F
2
P
001
2
001
1
2
PRODUCT NAME
LOT NO
2014. 12. 16
Revision No : 1
2/7
KF5N65P/F
Fig1. I - V
Fig2. I - V
D
D
GS
DS
102
101
V
=25V
DS
101
V
=10V, 7V
GS
100 C
25 C
100
V
=5V
100
GS
10-1
10-1
10-1
101
100
102
2
4
6
8
10
Drain - Source Voltage VDS (V)
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DSS
j
DS(ON) D
1.2
1.1
1.0
0.9
0.8
6.0
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
IDS = 250
V
=7V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
1
2
3
4
5
6
7
8
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
= 2.5A
GS
DS
101
100
10-1
150 C
25 C
-100
-50
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(V)
Junction Temperature T (
)
C
Source - Drain Voltage VSD
j
2014. 12. 16
Revision No : 1
3/7
KF5N65P/F
Fig 7. C - V
DS
Fig8. Q - V
g
GS
104
103
12
10
8
ID=5A
C
iss
V
= 520V
DS
102
101
6
C
oss
4
2
C
rss
0
100
3
9
12
21
24
0
6
15
18
(nC)
0
5
10
15
20
25
30
35
40
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig10. Safe Operation Area
Fig9. Safe Operation Area
(KF5N65P)
(KF5N65F)
102
101
100
10-1
102
102
101
100
10-1
102
Operation in this
area is limited by RDS(ON)
Operation in this
area is limited by RDS(ON)
10µs
10µs
100µs
100µs
1ms
1ms
10ms
10ms
DC
DC
T = 25
T = 25
C
c
C
c
C
C
T = 150
j
T = 150
j
Single pulse
Single pulse
102
103
102
103
100
101
100
101
Drain - Source Voltage V
(V)
Drain - Source Voltage V
(V)
DS
DS
Fig11. I - T
D
j
6
5
4
3
2
1
0
50
75
125
150
0
25
100
Junction Temperature T
(
)
C
j
2014. 12. 16
Revision No : 1
4/7
KF5N65P/F
Fig12. Transient Thermal Response Curve
(KF5N65P)
101
100
10-1
10-2
Duty=0.5
P
DM
t
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF5N65F)
101
100
10-1
10-2
Duty=0.5
P
DM
t
1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2014. 12. 16
Revision No : 1
5/7
KF5N65P/F
Fig14. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig15. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DD
DSS
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig16. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2014. 12. 16
Revision No : 1
6/7
KF5N65P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.8
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2014. 12. 16
Revision No : 1
7/7
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