KID65004AP/AF [KEC]

SEMICONDUCTOR;
KID65004AP/AF
型号: KID65004AP/AF
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

SEMICONDUCTOR

文件: 总7页 (文件大小:1505K)
中文:  中文翻译
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KID65001AP/AF~  
SEMICONDUCTOR  
KID65004AP/AF  
TECHNICAL DATA  
BIPOLAR LINEAR INTEGRATED CIRCUIT  
7 CIRCUIT DARLINGTON TRANSISTOR ARRAY  
W
FEATURES  
· Output Current : 500mA Max.  
Θ
· High Sustaining Voltage Outputs : 50V Min.  
· Output Clamp Diodes.  
d
P
D
T
DIM MILLIMETERS  
· Inputs Compatible With Various Types of Logic.  
· PKG Type AP : DIP-16Pin AF : FLP-16Pin  
A
_
+
A
B
D
d
19.3 0.2  
_
16  
9
6.45+0.2  
_
+
1.52 0.1  
_
0.46+0.1  
G
0.50 MIN  
_
+
3.8 0.3  
H
L
TYPE  
INPUT RESISTOR  
No (External)  
DESIGNATION  
General Purpose  
_
+
3.3 0.3  
1
8
P
2.54  
0.25+0.1/-0.05  
7.62  
KID65001AP/AF  
T
W
Θ
0 - 15  
Zener Diode  
KID65002AP/AF  
1425V P-MOS  
7V+10.5kΩ  
KID65003AP/AF  
KID65004AP/AF  
TTL, 5V C-MOS  
DIP-16  
2.7kΩ  
10.5kΩ  
615V P-MOS, C-MOS  
DESCRIPTION:  
The KID65001AP/AF Series are high-voltage, high-current  
darlington transistor array comprised of seven NPN darlington pairs.  
All units feature internal clamp diodes for switching inductive loads.  
P
L
D
A
DIM MILLIMETERS  
_
16  
9
A
B1  
B2  
D
9.88+0.2  
_
+
3.94 0.2  
_
6.00+0.3  
_
+
0.4 0.1  
G
0.15+0.1/-0.05  
_
+
1.63 0.2  
H
_
L
0.65+0.2  
P
1.27  
T
0.20+0.1/-0.05  
1
8
MAXIMUM RATINGS (Ta=25, unless otherwise noted)  
CHARACTERISTIC  
Output Sustaining Voltage  
Output Current  
SYMBOL  
VCE(SUS)  
IOUT  
RATING  
UNIT  
V
50  
500  
FLP-16  
mA/ch  
V
1)  
IIN  
Input Voltage  
-0.5+30  
25  
2)  
Input Current  
IIN  
mA  
V
VR  
IF  
Reverse Voltage  
Forward Current  
50  
Clamp  
Diode  
500  
mA  
A
IGND  
GND Terminal Current  
Power Dissipation  
2.8  
AP  
AF  
1.47  
W
PD  
0.54 /0.633)/1.25 4)  
-4085  
-55150  
W
Topr  
Tstg  
Operating Temperature  
Storage Temperature  
1) Except KID65001AP/AF  
2) Only KID65001AP/AF  
3) On PCB(30×30×1.6mm, Cu 50%)  
4) On PCB (Test Board : JEDEC 2s2p)  
2014. 9. 16  
Revision No : 12  
1/7  
KID65001AP/AF~KID65004AP/AF  
2014. 9. 16  
Revision No : 12  
2/7  
KID65001AP/AF~KID65004AP/AF  
RECOMMENDED OPERATING CONDITIONS (Ta=-4085)  
CHARACTERISTIC  
Output Sustaining Voltage  
SYMBOL  
VCE(SUS)  
CONDITION  
MIN.  
TYP. MAX. UNIT  
-
TPW=25ms, Duty=10%, 7 Circuits  
TPW=25ms, Duty=30%, 7 Circuits  
TPW=25ms, Duty=10%, 7 Circuits  
TPW=25ms, Duty=30%, 7 Circuits  
Except KID65001AP/AF  
Only KID65001AP/AF  
-
0
0
0
-
-
-
-
-
-
-
-
-
-
-
50  
370  
200  
290  
150  
30  
V
IOUT  
mA  
(AP, T =85)  
a
Output Current  
IOUT  
mA  
(AF, T =85)  
a
-
VIN  
IIN  
VR  
IF  
Input Voltage  
0
0
-
V
mA  
V
Input Current  
5
Clamp Diode Reverse Voltage  
Clamp Diode Forward Current  
50  
-
-
400  
0.76  
mA  
AP  
AF  
-
Ta=85℃  
PD  
Power Dissipation  
W
0.28 / 0.32* / 0.65**  
Ta=85℃  
* On PCB (30×30×1.6mm, Cu 50%)  
** On PCB (Test Board : JEDEC 2s2p)  
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise noted)  
TEST  
CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN. TYP. MAX. UNIT  
CIRCUIT  
VCE=50V, Ta=25℃  
-
-
-
-
-
-
-
-
-
-
-
-
-
50  
100  
500  
500  
1.6  
VCE=50V, Ta=85℃  
VCE=50V, VIN=6V  
VCE=50V, VIN=1V  
IOUT=350mA, IIN=500μA  
IOUT=200mA, IIN=350μA  
IOUT=100mA, IIN=250μA  
VIN=17V  
Output Leak  
Current  
ICEX  
1
μA  
KID65002AP/AF  
KID65004AP/AF  
-
-
1.3  
1.1  
0.9  
0.82  
0.93  
0.35  
1.0  
VCE(sat)  
Collector-Emitter Saturation Voltage  
2
1.3  
V
1.1  
KID65002AP/AF  
1.25  
1.35  
0.5  
VIN=3.85V  
KID65003AP/AF  
KID65004AP/AF  
Input Current  
(Output On)  
IIN(ON)  
3
4
mA  
VIN=5V  
VIN=12V  
1.45  
Output Current  
(Output Open)  
IIN(OFF)  
IOUT=500μA, Ta=85℃  
50  
65  
-
μA  
VCE=2V, IOUT=300mA  
VCE=2V, IOUT=200mA  
VCE=2V, IOUT=250mA  
VCE=2V, IOUT=300mA  
VCE=2V, IOUT=125mA  
VCE=2V, IOUT=200mA  
VCE=2V, IOUT=275mA  
VCE=2V, IOUT=350mA  
-
KID65002AP/AF  
KID65003AP/AF  
-
-
-
13  
2.4  
2.7  
3.0  
5.0  
6.0  
7.0  
8.0  
7.4  
0.7  
1.0  
-
-
-
-
-
-
VIN(ON)  
-
-
Input Voltage  
5
-
-
V
KID65004AP/AF  
-
-
-
-
KID65002AP/AF  
KID65003AP/AF  
KID65004AP/AF  
0
-
VIN(OFF)  
-
0
-
-
0
-
hFE  
IR  
VCE=2V, IOUT=350mA  
VR=50V, Ta=25℃  
VR=50V, Ta=85℃  
IF=350mA  
DC Current Transfer Ratio  
2
6
1000  
-
-
-
-
-
-
-
-
50  
100  
2.0  
-
Clamp Diode Reverse Current  
μA  
-
VF  
CIN  
tON  
tOFF  
Clamp Diode Forward Voltage  
Input Capacitance  
7
-
-
V
-
15  
0.1  
0.2  
pF  
Turn-ON Delay  
-
8
VOUT=50V, RL=163,CL=15pF  
μs  
Turn-OFF Delay  
-
2014. 9. 16  
Revision No : 12  
3/7  
KID65001AP/AF~KID65004AP/AF  
2014. 9. 16  
Revision No : 12  
4/7  
KID65001AP/AF~KID65004AP/AF  
Notes : 1. Pulse Width 50μs, Duty Cycle 10%  
Output Impedance 50, tr5ns, tf10ns  
2. See below  
Input Conditions  
RI  
VIH  
3V  
Type Number  
KID65001AP/AF  
KID65002AP/AF  
KID65003AP/AF  
KID65004AP/AF  
2.7kΩ  
0
0
0
13V  
3V  
8V  
3. CL includes probe and Jig capacitance.  
2014. 9. 16  
Revision No : 12  
5/7  
KID65001AP/AF~KID65004AP/AF  
2014. 9. 16  
Revision No : 12  
6/7  
KID65001AP/AF~KID65004AP/AF  
2014. 9. 16  
Revision No : 12  
7/7  

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