KID65004AP/AF [KEC]
SEMICONDUCTOR;型号: | KID65004AP/AF |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | SEMICONDUCTOR |
文件: | 总7页 (文件大小:1505K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KID65001AP/AF~
SEMICONDUCTOR
KID65004AP/AF
TECHNICAL DATA
BIPOLAR LINEAR INTEGRATED CIRCUIT
7 CIRCUIT DARLINGTON TRANSISTOR ARRAY
W
FEATURES
· Output Current : 500mA Max.
Θ
· High Sustaining Voltage Outputs : 50V Min.
· Output Clamp Diodes.
d
P
D
T
DIM MILLIMETERS
· Inputs Compatible With Various Types of Logic.
· PKG Type AP : DIP-16Pin AF : FLP-16Pin
A
_
+
A
B
D
d
19.3 0.2
_
16
9
6.45+0.2
_
+
1.52 0.1
_
0.46+0.1
G
0.50 MIN
_
+
3.8 0.3
H
L
TYPE
INPUT RESISTOR
No (External)
DESIGNATION
General Purpose
_
+
3.3 0.3
1
8
P
2.54
0.25+0.1/-0.05
7.62
KID65001AP/AF
T
W
Θ
0 - 15
Zener Diode
KID65002AP/AF
14∼ 25V P-MOS
7V+10.5kΩ
KID65003AP/AF
KID65004AP/AF
TTL, 5V C-MOS
DIP-16
2.7kΩ
10.5kΩ
6∼ 15V P-MOS, C-MOS
DESCRIPTION:
The KID65001AP/AF Series are high-voltage, high-current
darlington transistor array comprised of seven NPN darlington pairs.
All units feature internal clamp diodes for switching inductive loads.
P
L
D
A
DIM MILLIMETERS
_
16
9
A
B1
B2
D
9.88+0.2
_
+
3.94 0.2
_
6.00+0.3
_
+
0.4 0.1
G
0.15+0.1/-0.05
_
+
1.63 0.2
H
_
L
0.65+0.2
P
1.27
T
0.20+0.1/-0.05
1
8
MAXIMUM RATINGS (Ta=25℃, unless otherwise noted)
CHARACTERISTIC
Output Sustaining Voltage
Output Current
SYMBOL
VCE(SUS)
IOUT
RATING
UNIT
V
50
500
FLP-16
mA/ch
V
1)
IIN
Input Voltage
-0.5∼ +30
25
2)
Input Current
IIN
mA
V
VR
IF
Reverse Voltage
Forward Current
50
Clamp
Diode
500
mA
A
IGND
GND Terminal Current
Power Dissipation
2.8
AP
AF
1.47
W
PD
0.54 /0.633)/1.25 4)
-40∼ 85
-55∼ 150
W
Topr
Tstg
Operating Temperature
Storage Temperature
℃
℃
1) Except KID65001AP/AF
2) Only KID65001AP/AF
3) On PCB(30×30×1.6mm, Cu 50%)
4) On PCB (Test Board : JEDEC 2s2p)
2014. 9. 16
Revision No : 12
1/7
KID65001AP/AF~KID65004AP/AF
2014. 9. 16
Revision No : 12
2/7
KID65001AP/AF~KID65004AP/AF
RECOMMENDED OPERATING CONDITIONS (Ta=-40∼ 85℃)
CHARACTERISTIC
Output Sustaining Voltage
SYMBOL
VCE(SUS)
CONDITION
MIN.
TYP. MAX. UNIT
-
TPW=25ms, Duty=10%, 7 Circuits
TPW=25ms, Duty=30%, 7 Circuits
TPW=25ms, Duty=10%, 7 Circuits
TPW=25ms, Duty=30%, 7 Circuits
Except KID65001AP/AF
Only KID65001AP/AF
-
0
0
0
-
-
-
-
-
-
-
-
-
-
-
50
370
200
290
150
30
V
IOUT
mA
(AP, T =85℃)
a
Output Current
IOUT
mA
(AF, T =85℃)
a
-
VIN
IIN
VR
IF
Input Voltage
0
0
-
V
mA
V
Input Current
5
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
50
-
-
400
0.76
mA
AP
AF
-
Ta=85℃
PD
Power Dissipation
W
0.28 / 0.32* / 0.65**
Ta=85℃
* On PCB (30×30×1.6mm, Cu 50%)
** On PCB (Test Board : JEDEC 2s2p)
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise noted)
TEST
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
CIRCUIT
VCE=50V, Ta=25℃
-
-
-
-
-
-
-
-
-
-
-
-
-
50
100
500
500
1.6
VCE=50V, Ta=85℃
VCE=50V, VIN=6V
VCE=50V, VIN=1V
IOUT=350mA, IIN=500μA
IOUT=200mA, IIN=350μA
IOUT=100mA, IIN=250μA
VIN=17V
Output Leak
Current
ICEX
1
μA
KID65002AP/AF
KID65004AP/AF
-
-
1.3
1.1
0.9
0.82
0.93
0.35
1.0
VCE(sat)
Collector-Emitter Saturation Voltage
2
1.3
V
1.1
KID65002AP/AF
1.25
1.35
0.5
VIN=3.85V
KID65003AP/AF
KID65004AP/AF
Input Current
(Output On)
IIN(ON)
3
4
mA
VIN=5V
VIN=12V
1.45
Output Current
(Output Open)
IIN(OFF)
IOUT=500μA, Ta=85℃
50
65
-
μA
VCE=2V, IOUT=300mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=250mA
VCE=2V, IOUT=300mA
VCE=2V, IOUT=125mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=275mA
VCE=2V, IOUT=350mA
-
KID65002AP/AF
KID65003AP/AF
-
-
-
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
7.4
0.7
1.0
-
-
-
-
-
-
VIN(ON)
-
-
Input Voltage
5
-
-
V
KID65004AP/AF
-
-
-
-
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
0
-
VIN(OFF)
-
0
-
-
0
-
hFE
IR
VCE=2V, IOUT=350mA
VR=50V, Ta=25℃
VR=50V, Ta=85℃
IF=350mA
DC Current Transfer Ratio
2
6
1000
-
-
-
-
-
-
-
-
50
100
2.0
-
Clamp Diode Reverse Current
μA
-
VF
CIN
tON
tOFF
Clamp Diode Forward Voltage
Input Capacitance
7
-
-
V
-
15
0.1
0.2
pF
Turn-ON Delay
-
8
VOUT=50V, RL=163Ω ,CL=15pF
μs
Turn-OFF Delay
-
2014. 9. 16
Revision No : 12
3/7
KID65001AP/AF~KID65004AP/AF
2014. 9. 16
Revision No : 12
4/7
KID65001AP/AF~KID65004AP/AF
Notes : 1. Pulse Width 50μs, Duty Cycle 10%
Output Impedance 50Ω , tr≦5ns, tf≦10ns
2. See below
Input Conditions
RI
VIH
3V
Type Number
KID65001AP/AF
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
2.7kΩ
0
0
0
13V
3V
8V
3. CL includes probe and Jig capacitance.
2014. 9. 16
Revision No : 12
5/7
KID65001AP/AF~KID65004AP/AF
2014. 9. 16
Revision No : 12
6/7
KID65001AP/AF~KID65004AP/AF
2014. 9. 16
Revision No : 12
7/7
相关型号:
KID65081AF
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65081AP
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65082AF
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65082AP
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65083AF
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65083AP
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
KID65084AF
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS)
KEC
©2020 ICPDF网 联系我们和版权申明