KMC6D5CN20CA [KEC]
Common N-Ch Trench MOSFET; 常见的N沟道沟槽MOSFET
| 型号： | KMC6D5CN20CA |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | Common N-Ch Trench MOSFET |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KMC6D5CN20CA
Common N-Ch Trench MOSFET
TECHNICAL DATA
General Description
This Device is a Dual N-Channel MOSFET designed for use as a bi-
directional load switch, facilitated by its commom-drain configuration.
It′s mainly suitable for Li-ion battery pack.
C
D
8
5
A
E1
E
B
A1
FEATURES
1
4
VDSS=20V, ID=6.5A.
Low Drain to Source On Resistance.
: RDS(ON)=24.0m (Max.) @ VGS=4.5V
: RDS(ON)=25.0m (Max.) @ VGS=4.0V
: RDS(ON)=27.0m (Max.) @ VGS=3.1V
: RDS(ON)=32.0m (Max.) @ VGS=2.5V
ESD Protection.
DIM MILLIMETERS
A
A1
B
1.2 MAX
0.15 MAX
_
0.28 + 1
0.65 Typ.
GAUGE
PLANE
C
D
E
_
3.0 + 0.10
_
6.40 0.20
+
_
4.40+0.10
E1
L
_
+
0.50 0.20
Super High Dense Cell Design.
0.25
L
MAXIMUM RATING (Ta=25
)
TSSOP-8
CHARACTERISTIC
SYMBOL RATING UNIT
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
20
12
V
V
Marking
Type Name
6.5
26
DC@Ta = 25℃(Note1)
Pulsed
Drain Current
A
IDP
KMC6D5
CN20CA
PD
Drain Power Dissipation
1.5
W
@Ta = 25℃(Note1)
Tj
Maximum Junction Temperature
150
Tstg
RthJA
Storage Temperature Range
-55 150
83.3
Lot No.
Thermal Resistance, Junction to Ambient(Note1)
/W
Note 1) Surface Mounted on 1″ 1″FR4 Board, t≤ 10sec
PIN CONNECTION (TOP VIEW)
D
S
1
2
8
7
D
1
2
3
4
8
7
6
5
S
1
1
2
Rg
Rg
S
S
3
4
6
5
2
G
G
1
2
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Revision No : 0
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KMC6D5CN20CA
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Static
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain Cut-off Current
20
-
-
-
V
VGS=0V, ID=250 A
VDS=20V, VGS=0V
VGS 12V, VDS=0V
-
-
1
A
IGSS
Gate to Source Leakage Current
Gate Threshold Voltage
-
=
10
A
Vth
0.5
-
-
1.5
24.0
25.0
27.0
32.0
-
V
VDS=VGS, ID=250 A
VGS=4.5V, ID=3.0A
VGS=4.0V, ID=3.0A
VGS=3.1V, ID=3.0A
VGS=2.5V, ID=3.0A
(Note2)
(Note2)
(Note2)
(Note2)
21.5
22.5
24.5
28.5
2.5
28
-
RDS(ON)
Drain to Source On Resistance
m
-
-
Rg
gfs
Gate Resistance
f=1MHz
-
k
VDS=5V, ID=6.5A
(Note2)
Forward Transconductance
Dynamic
-
-
S
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
4.6
1.0
2.6
1.0
1.8
7.0
6.0
-
-
-
-
-
-
-
VDS=10V, ID=6.5A
VGS=4.0V
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
nC
(Note2)
VDS=10V, VGS=4.0V
ID=4.0A, RG=6
s
(Note2)
(Note2)
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Source to Drain Diode Ratings
Source to Drain Diode Forward Voltage
VSD
VGS=0V, IS=1.7A
-
0.8
1.2
V
Note2) Pulse test : Pulse width 300 , Duty Cycle 2%.
2009. 6. 4
Revision No : 0
2/4
KMC6D5CN20CA
Fig 1. I - V
D
Fig 2. R
- I
DS(ON) D
DS
50
30
24
18
12
6
VGS=4.5,4.0,3.1V
2.5V
40
VGS=2.5V
30
VGS=4.5V
20
2.0V
10
0
0
0
6
12
18
24
30
0
0.5
1
1.5
2
2.5
3
Drain Current ID (A)
Drain to Source Voltage VDS (V)
Fig 4. R
- T
j
Fig 3. I - V
D
DS(ON)
GS
30
24
18
12
6
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS=4.5V, ID=3A
VGS=2.5V, ID=3A
25 C
150 C
Tj=-55 C
2
0
0
1
3
4
-75 -50 -25
0
25 50 75 100 125 150 175
Gate to Source Voltage VGS (V)
Junction Temperature Tj (
)
C
Fig 6. I - V
S
Fig 5. V - T
th
SD
j
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
1
VGS = VDS, ID = 250µA
150 C
Tj=-55
C
25 C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
-75 -50 -25
0
25 50 75 100 125 150 175
(V)
Source to Drain Forward Voltage VSD
Junction Temperature Tj (
)
C
2009. 6. 4
Revision No : 0
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KMC6D5CN20CA
Fig7. R
- V
DS(ON)
GS
Fig8. C - V
DS
50
40
30
20
10
0
1000
ID=6.5A
f = 1MHz
800
C
iss
Tj=150
C
600
400
200
0
Tj=25
C
C
oss
C
rss
2.5
3.5
4.5
1.5
12
16
20
4
6
0
Gate to Source Voltage VGS (V)
Fig9. Q - V
Drain to Source Voltage V
DS
(V)
Fig10. Safe Operation Area
g
GS
5
4
3
102
101
VDS = 10V
6.5
ID
=
A
200µs
1ms
100
RDS(ON) Limited
10ms
2
1
0
100ms
10-1
10-2
DC
VGS=4.5V
SINGLE PULSE
= 25 C
Ta
10-2
10-1
100
101
102
0
1.2
2.4
3.6
(nC)
4.8
6
Drain to Source Voltage VDS (V)
Gate Charge
Q
g
Fig10. Transient Thermal Response Curve
101
100
Duty Cycle = 0.5
0.2
10-1
10-2
10-3
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
1. Duty Cycle D = t1/t2
2. RthJA=111 C/W
100
Square Wave Pulse Duration tw (sec)
101
102
103
10-4
10-3
10-2
10-1
2009. 6. 4
Revision No : 0
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