KRC861U [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); 外延平面NPN晶体管（开关，接口电路和驱动电路）
| 型号： | KRC861U |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KRC860U~KRC864U
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
B1
With Built-in Bias Resistors.
Simplify Circuit Design.
DIM MILLIMETERS
_
1
2
3
6
5
4
A
A1
B
2.00+0.20
_
1.3+0.1
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
_
2.1+0.1
D
_
1.25+0.1
B1
C
0.65
0.2+0.10/-0.05
0-0.1
D
G
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
_
0.9+0.1
H
T
0.15+0.1/-0.05
T
6
5
4
C
G
R1
B
1. Q EMITTER
1
Q1
2. Q BASE
1
3. Q COLLECTOR
2
Q2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
E
1
2
3
US6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL RATING
UNIT
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
SYMBOL RATING
UNIT
mW
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
5
V
V
PC
Tj
*
200
150
V
Tstg
Storage Temperature Range
* Total Rating.
-55 150
100
mA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
100
100
-
UNIT
nA
VCB=50V, IE=0
Collector Cut-off Current
-
-
-
IEBO
VEB=5V, IC=0
Emitter Cut-off Current
-
120
-
nA
hFE
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
DC Current Gain
-
VCE(sat)
fT *
Collector-Emitter Saturation Voltage
Transition Frequency
0.1
250
0.3
-
V
-
MHz
KRC860U
KRC861U
-
-
-
-
-
4.7
10
-
-
-
-
-
KRC862U
KRC863U
KRC864U
R1
100
22
Input Resistor
k
47
Note : * Characteristic of Transistor Only.
Type Name
Marking
6
5
4
MARK SPEC
TYPE
KRC860U
NK
KRC861U
NM
KRC862U
NN
KRC863U
NO
KRC864U
NP
MARK
1
2
3
2002. 7. 10
Revision No : 3
1/4
KRC860U~KRC864U
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
0.025
0.03
0.3
MAX.
UNIT
KRC860U
KRC861U
KRC862U
KRC863U
KRC864U
KRC860U
KRC861U
KRC862U
KRC863U
KRC864U
KRC860U
KRC861U
KRC862U
KRC863U
KRC864U
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tr
Rise Time
0.06
0.11
3.0
2.0
VO=5V
Switching
Time
tstg
VIN=5V
RL=1k
Storage Time
6.0
S
4.0
5.0
0.2
0.12
2.0
tf
Fall Time
0.9
1.4
2002. 7. 10
Revision No : 3
2/4
KRC860U~KRC864U
VCE(sat) - I C
hFE - I C
KRC860U
KRC860U
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
Ta=-25 C
V
=5V
30
CE
0.01
10
0.1
0.3
1
3
10
100
0.1
0.3
1
3
10
30
100
100
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
hFE - I C
VCE(sat) - IC
KRC861U
KRC861U
2
1
2k
1k
I
C
/I =20
B
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
0.05
0.03
50
30
Ta=25 C
Ta=-25 C
V
=5V
30
CE
10
0.01
0.1
0.3
1
3
10
100
0.1
0.3
1
3
10
30
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
h FE - I C
VCE(sat) - IC
KRC862U
KRC862U
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
Ta=-25 C
V
=5V
30
CE
10
0.01
0.1
0.1
0.3
1
3
10
100
0.3
1
3
10
30
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
2002. 7. 10
Revision No : 3
3/4
KRC860U~KRC864U
VCE(sat) - I C
h FE - IC
KRC863U
KRC863U
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
V
=5V
Ta=-25 C
CE
10
0.01
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
(mA)
100
COLLECTOR CURRENT I
COLLECTOR CURRENT I (mA)
C
C
hFE - I C
VCE(sat) - IC
KRC864U
KRC864U
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
0.05
0.03
50
30
Ta=25 C
Ta=-25 C
V
=5V
CE
0.01
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
2002. 7. 10
Revision No : 3
4/4
相关型号：
©2020 ICPDF网 联系我们和版权申明