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KSC5803 [KEC]

High Voltage Color Display Horizontal Deflection Output(No Damper Diode); 高压彩色显示器的水平偏转输出（无阻尼二极管）
KSC5803
型号： KSC5803
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

High Voltage Color Display Horizontal Deflection Output(No Damper Diode)
高压彩色显示器的水平偏转输出（无阻尼二极管）

晶体 显示器 二极管 晶体管 开关 高压 局域网
文件： 总5页 (文件大小：94K)
中文：  中文翻译
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KSC5803  
High Voltage Color Display Horizontal  
Deflection Output  
(No Damper Diode)  
•
•
•
•
High Breakdown Voltage : BV  
=1500V  
CBO  
High Speed Switching : t =0.1µs (Typ.)  
F
Wide S.O.A  
For C-Monitor(85KHz)  
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1500  
800  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
V
V
V
6
V
I
I
12  
A
C
24  
A
CP  
P
Collector Dissipation (T =25°C)  
70  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
1
Units  
I
I
I
V
V
V
= 1400V, V =0  
mA  
µA  
CES  
CBO  
EBO  
CE  
CE  
EB  
BE  
= 800V, I = 0  
10  
1
E
= 4V, I = 0  
mA  
C
h
h
V
V
= 5V, I = 1A  
15  
5.5  
40  
8.5  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 8A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Storage Time  
I
I
= 8A, I = 2A  
3
V
V
CE  
C
C
B
= 8A, I = 2A  
1.5  
4
BE  
B
t
t
V
= 200V, I = 7A  
µs  
µs  
STG  
F
CC  
C
I
= 1.4A, I = - 2.8A  
Fall Time  
B1  
B2  
0.3  
R = 28.6Ω  
L
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
100  
10  
1
12  
VCE=5V  
IB=2.0A  
IB=1.8A  
IB=1.6A  
IB=1.4A  
IB=1.2A  
IB=1.0A  
10  
8
℃
125  
75℃  
℃
℃
25  
-25  
IB=800mA  
6
IB=600mA  
IB=400mA  
4
IB=200mA  
2
0
0
1
2
3
4
5
6
7
8
9
10  
0.1  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
104  
103  
102  
101  
2
IC=3IB  
IC=3IB  
℃
125  
℃
℃
75  
1
25  
0.9  
℃
-25  
℃
℃
0.8 -25  
0.7  
25  
0.6  
75  
℃
0.5  
℃
125  
0.4  
0.1  
1
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Collector-Emitter Saturation Voltage 1  
104  
12  
IC=5IB  
VCE=5V  
10  
℃
125  
℃
75  
103  
102  
101  
8
6
4
2
0
℃
25  
℃
-25  
0.1  
1
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
IC[A], COLLECTOR CURRENT  
VBE[V], BASE EMITTER VOLTAGE  
Figure 5. Collector-Emitter Saturation Voltage 2  
Figure 6. Base-Emitter On Voltage  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics (Continued)  
10  
100  
10  
RESISTIVE  
Vcc=200V  
Ic=7A  
Ib1=1.4A  
tstg  
10µs  
100ms  
DC  
100µs  
1ms  
10ms  
1
1
tf  
0.1  
0.01  
SINGLE PULSE  
℃
Tc=25  
0.1  
0.1  
1
10  
1
10  
100  
1000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
-IB2[A], BASE CURRENT  
Figure 7. Switching Time  
Figure 8. Safe Operating Area  
100  
10  
1
80  
70  
60  
50  
40  
30  
20  
10  
Ib2=-1AConst  
(at Ic>5A)  
Ic=5Ib1=5Ib2  
L=500µH  
SINGLE PULSE  
0.1  
0
0
10  
100  
1000  
10000  
25  
50  
75  
100  
125  
150  
℃
TC[ ], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 9. Reverse Bias Safe Operating Area  
Figure 10. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-3PF  
5.50 ±0.20  
3.00 ±0.20  
15.50 ±0.20  
ø3.60 ±0.20  
(1.50)  
°
10  
0.85 ±0.03  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
2.00 ±0.20  
3.30 ±0.20  
4.00 ±0.20  
+0.20  
–0.10  
0.75  
5.45TYP  
[5.45 ±0.30  
5.45TYP  
[5.45 ±0.30]  
+0.20  
–0.10  
0.90  
]
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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