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KTA1807D [KEC]

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES); 三重扩散型PNP晶体管（高压开关电源的开关用于电话）
KTA1807D
型号： KTA1807D
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)
三重扩散型PNP晶体管（高压开关电源的开关用于电话）

晶体 开关 晶体管 高压 电话
文件： 总4页 (文件大小：406K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SEMICONDUCTOR  
KTA1807D/L  
TRIPLE DIFFUSED PNP TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE SWITCHING.  
POWER SUPPLY SWITCHING FOR TELEPHONES.  
A
C
I
FEATURES  
J
High Voltage : VCEO=-600V.  
High Speed Switching Time.  
: tf 1.0 s (IC=-0.5A)  
DIM MILLIMETERS  
_
A
B
C
D
E
F
H
I
6.60+0.2  
_
6.10+0.2  
_
5.0+0.2  
_
1.10+0.2  
Low Collector Emitter Saturation Voltage.  
: VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA)  
Wide Safe Operating Area (SOA).  
_
2.70+0.2  
_
2.30+0.1  
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
J
_
2.00+0.20  
H
K
P
_
0.50+0.10  
_
0.91+ 0.10  
L
M
O
P
F
L
F
_
0.90+0.1  
1
2
3
_
1.00+0.10  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
Q
0.95 MAX  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-600  
-600  
-7  
UNIT  
V
1. BASE  
2. COLLECTOR  
3. EMITTER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltag  
V
V
DPAK  
DC  
-1.0  
Collector Current  
A
ICP  
Pulse  
Collector Power Dissipation  
Junction Temperature  
*
-2.0  
PC  
1.0  
W
A
C
I
Tj  
150  
J
Tstg  
Storage Temperature Range  
* PW 10ms, Duty Cycle 50%.  
-55 150  
DIM MILLIMETERS  
_
A
B
C
D
E
F
6.60  
6.10  
+
0.2  
0.2  
_
+
_
+
5.0 0.2  
_
+
_
+
_
+
_
+
1.10  
9.50  
2.30  
0.76  
0.2  
0.6  
0.1  
0.1  
P
H
G
G
H
I
1.0 MAX  
_
+
2.30 0.2  
_
J
0.5  
2.0  
+
0.1  
0.2  
F
F
L
_
+
K
L
P
_
+
0.50 0.1  
_
1.0 0.1  
+
1
2
3
Q
0.90 MAX  
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
2003. 3. 27  
Revision No : 2  
1/4  
KTA1807D/L  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP.  
-
MAX.  
-10  
-10  
120  
-
UNIT  
A
VCB=-600V, IE=0  
VEB=-7.0V, IC=0  
-
-
-
A
hFE (1) (Note) VCE=-5.0V, IC=-0.1A  
30  
5
-
-
DC Current Gain  
hFE (2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=-5.0V, IC=-0.5A  
IC=-0.3A, IB=-60mA  
IC=-0.3A, IB=-60mA  
VCE=-10V, IE=50mA  
VCB=-10V, IE=0, f=1MHz  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
-0.28  
-0.85  
28  
-1.0  
-1.2  
-
V
V
-
-
MHz  
pF  
Cob  
Collector Output Capacitance  
Turn On Time  
Switching  
Storage Time  
Time  
-
42  
-
ton  
-
0.1  
3.5  
0.08  
0.5  
5.0  
0.5  
IC=-0.5A, RL=500  
,
tstg  
-
s
IB1=-IB2=-0.1A, VCC=-250V  
tf  
Fall Time  
-
Note : hFE Classification O:30~80, Y:60~120.  
2003. 3. 27  
Revision No : 2  
2/4  
KTA1807D/L  
REVERSE BIAS  
SAFE OPERATING AREA  
I C - VCE  
-100  
-80  
-60  
-40  
-20  
-1.0  
-1.8mA  
-1.6mA  
-0.8  
-0.6  
-1.4mA  
-1.2mA  
-1.0mA  
-0.8mA  
-0.4  
-0.2  
0
-0.6mA  
-0.4mA  
I
=-0.2mA  
B
0
0
-2  
-4  
-6  
-8  
-10  
0
-200  
-400  
-600  
-800  
-1K  
COLLECTOR-EMITTER VOLTAGE V  
(V)  
COLLECTOR-EMITTER VOLTAGE V  
(V)  
CE  
CE  
hFE - IC  
IC - VBE  
1K  
300  
100  
30  
-1.0  
-0.3  
V
=-5V  
V
=-5V  
CE  
CE  
-0.1  
-0.03  
10  
-0.01  
3
1
-0.003  
-0.002 -0.005-0.01 -0.02 -0.05 -0.1 -0.2  
-0.5 -1 -2  
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
BASE-EMITTER VOLTAGE V (V)  
COLLECTOR CURRENT I (A)  
C
BE  
t
- I C  
VCE(sat) , VBE(sat) - IC  
-3  
10  
3
I
/ I =5  
B
=-250V  
I
/ I =5  
B
C
C
V
I
CE  
=-I  
B1  
B2  
t
stg  
-1  
1
-0.3  
0.5  
0.3  
-0.1  
t
0.1  
f
-0.03  
0.05  
-0.1  
-0.3  
-0.5  
-1  
-0.005 -0.01  
-0.03 -0.05 -0.1  
-0.3 -0.5  
COLLECTOR CURRENT I (A)  
C
COLLECTOR CURRENT I (A)  
C
2003. 3. 27  
Revision No : 2  
3/4  
KTA1807D/L  
Cob - VCB  
f T - I C  
100  
200  
100  
V
=-5V  
CE  
I
=0  
E
50  
30  
50  
30  
10  
5
10  
5
-0.003 -0.005 -0.01  
-0.03 -0.05  
-0.1  
-0.2  
-3  
-10  
-30  
-100  
-300  
COLLECTOR CURRENT I (mA)  
C
COLLECTOR-BASE VOLTAGE V  
(V)  
CB  
PT - Ta  
rth - t w  
12  
10  
8
CURVES SHOULD BE APPLIED IN  
THERMAL LIMITED AREA.  
(SINGLE NONREPETITIVE PULSE)  
1 Tc=25 C  
WITH 7.5cm2`0.8mm  
CERAMIC SUBSTRATE  
1
2
1
2
INFINITE HEAT SINK  
WITHOUT HEAT SINK  
3 Ta=25 C  
300  
100  
2
1
6
4
10  
1
2
2
3
0
200  
0
50  
100  
150  
0.01  
0.1  
1
10  
(s)  
100  
PULSE WIDTH t  
AMBIENT TEMPERATURE Ta ( C)  
w
SAFE OPERATING AREA  
-3  
-1  
I
(Pulse) MAX. *  
C
I
MAX.  
C
Pw=1ms  
-0.5  
-0.3  
*
-0.1  
-0.03  
* SINGLE NONREPETITVE  
PULSE Tc=25 C  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE  
IN TEMPERATURE  
-0.01  
-0.005  
-1  
-3  
-10  
-30  
-100  
-300  
(V)  
-1K  
COLLECTOR-EMITTER VOLTAGE V  
CE  
2003. 3. 27  
Revision No : 2  
4/4  

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