KTA711T [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KTA711T |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA711T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
K
1
B
K
6
FEATURES
ᴌExcellent hFE Linearity
DIM MILLIMETERS
_
A
B
C
D
E
2.9+0.2
1.6+0.2/-0.1
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
ᴌComplementary to KTC811T.
_
0.70+0.05
2
5
_
+
0.4 0.1
2.8+0.2/-0.3
_
F
G
H
I
1.9+0.2
3
4
0.95
_
0.16+0.05
0.00-0.10
0.25+0.25/-0.15
0.60
J
MAXIMUM RATING (Ta=25ᴱ)
K
L
0.55
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
RATING
-35
UNIT
V
I
H
J
J
VCBO
VCEO
VEBO
IC
1. Q EMITTER
1
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-30
V
2. Q BASE
1
2
3. Q COLLECTOR
4. Q EMITTER
-5
V
2
2
5. Q BASE
-500
500
mA
mA
W
6. Q COLLECTOR
1
IE
Emitter Current
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
0.9
TS6
EQUIVALENT CIRCUIT (TOP VIEW)
150
ᴱ
Tstg
-55ᴕ150
ᴱ
6
5
4
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
Q1
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
ỌA
VCB=-35V, IE=0
-
-
-
-
-0.1
-0.1
240
-
IEBO
hFE(1) (Note)
hFE(2) (Note)
VCE(sat)
VBE
VEB=-5V, IC=0
Emitter Cut-off Current
ỌA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-400mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
70
25
-
-
DC Current Gain
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-0.1
-0.8
200
13
-0.25
-1.0
-
V
V
-
fT
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
Note : hFE(1) Classification
hFE(2) Classification
0:70ᴕ140, Y:120ᴕ240
0:25Min., Y:40Min.
Marking
6
5
2
4
Lot No.
h
Rank
FE
Type Name
S
1
3
2001. 6. 27
Revision No : 0
1/2
KTA711T
hFE - IC
IC - VCE
-600
-500
-400
-300
-200
1k
COMMON
EMITTER
Ta=25 C
COMMON EMITTER
-8 -7 -6
-5
500
300
-4
Ta=100 C
Ta=25 C
V
CE
=-6V
-3
-2
100
Ta=-25 C
V
CE
=-1V
50
30
I
=-1mA
B
-100
0
0
10
-0.3
-1
-3
-10
-30 -100
-300
-1k
0
-1
-2
-3
-4
-5
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
VCE(sat) - IC
IB - VBE
-3
-1
-3k
COMMON
EMITTER
=-6V
COMMON EMITTER
I
/I =10
B
-1k
-300
-100
-30
C
V
CE
-0.5
-0.3
-0.1
-10
Ta=100 C
-0.05
-0.03
-3
Ta=25 C
Ta=-25 C
-1
-0.01
-0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
-0.5 -1
-3
-10
-30 -100
-300
-1k
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V
BE
Pc - Ta
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm2 `0.8mm)
1.0
0.8
0.6
0.4
0.2
0
140 160
0
20
40
60
80 100 120
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 27
Revision No : 0
2/2
相关型号：
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, ELECTRICAL EQUIPMENT)
KEC
©2020 ICPDF网 联系我们和版权申明