KTB1124 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, ELECTRICAL EQUIPMENT); 外延平面PNP晶体管（电压调节继电器灯驱动器，电气设备）
| 型号： | KTB1124 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, ELECTRICAL EQUIPMENT) |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
A
H
C
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
G
DIM MILLIMETERS
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTD1624.
A
B
C
D
E
F
4.70 MAX
D
_
+
D
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
K
F
F
_
+
1.50 0.10
G
H
J
0.40 TYP
1.75 MAX
0.75 MIN
1
2
3
MAXIMUM RATING (Ta=25ᴱ)
K
0.5+0.10/-0.05
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
1. BASE
-60
2. COLLECTOR (HEAT SINK)
3. EMITTER
-50
V
-6
V
-3
-6
A
SOT-89
ICP
Collector Current(Pulse)
A
PC
500
mW
W
Collector Power Dissipation
PC*
1
Marking
Tj
Junction Temperature
150
ᴱ
ᴱ
h
Rank
Lot No.
FE
Tstg
Storage Temperature Range
-55ᴕ150
2
* : Package mounted on ceramic substrate(250mm ᴧ0.8t)
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT.
VCB=-40V, IE=0
-
-
-
-1
-1
ὧ
ὧ
IEBO
VEB=-4V, IC=0
-
100
35
-
hFE(1) (Note)
hFE (2)
VCE(sat)
VBE(sat)
fT
VCE=-2V, IC=-100Ὠ
VCE=-2V, IC=-3A
IC=-2A, IB=-100Ὠ
IC=-2A, IB=-100Ὠ
VCE=-10V, IC=-50Ὠ
VCB=-10V, f=1ὲ
-
400
-
DC Current Gain
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-0.35
-0.94
150
39
-0.7
-1.2
-
V
V
-
-
ὲ
ὸ
Cob
Collector Output Capacitance
-
-
I
PW=20µs
B1
<
DC 1%
=
ton
tstg
tf
R8
I
Turn-on Time
-
-
-
70
450
35
-
-
-
INPUT
B2
25
VR
Switching
Storage Time
Time
50
nS
100Ω
470Ω
5V
-10I 1=10I =I =1A
-25V
Fall Time
B
B2
C
Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
2001. 12. 6
Revision No : 3
1/3
KTB1124
I C - VBE
I C - VCE
-3.2
-2.8
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-200mA
-100mA
-50mA
V
CE
=-2V
-2.4
-2.0
-1.6
-1.2
-0.8
-20mA
-10mA
-5mA
-0.4
0
-0.5
0
I
=0
B
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
BASE EMITTER VOLTAGE V
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BE
I C - VCE
hFE - I C
-2.0
1k
-14mA
-12mA
-10mA
-8mA
V
=-2V
CE
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
-6mA
100
-4mA
-2mA
50
30
I
=0
B
10
0
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
COLLECTOR EMITTER VOLTAGE V (V)
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I (A)
C
CE
VCE(sat) - IC
VBE(sat) - I C
-1K
-10
I
/I =20
B
I /I =20
C B
C
-500
-300
-5
-3
Ta=25 C
Ta=-25 C
Ta=75 C
Ta=-25 C
Ta=75 C
-100
-1
-50
-30
-0.5
-0.3
Ta=25 C
-0.1
-0.01 -0.03
-10
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
C
2001. 12. 6
Revision No : 3
2/3
KTB1124
f T - I C
Cob - VCB
1k
100
f=1MHz
V
CE
=10V
500
300
50
30
100
10
50
30
5
3
10
1
-0.1
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
-0.3
-1
-3
-10
-30
(V)
-100
COLLECTOR CURRENT I (A)
C
COLLECTOR BASE VOLTAGE V
CB
SAFE OPERATING AREA
P C - Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
-10
1
MOUNTED ON CERAMIC
I
CP
1
2
SUBSTRATE
-5
-3
(250mm2x0.8t)
Ta=25 C
I
MAX.
C
2
-1
-0.5
-0.3
-0.1
-0.05
MOUNTED ON CERAMIC
BOARD (250mm2 x0.8t)
Ta=25 C ONE PULSE
0
20
40
60
80 100 120 140 160
-0.03
-0.02
AMBIENT TEMPERATURE Ta ( C)
-0.1
-0.3
-1
-3
-10
-30
CE
-100
(V)
COLLECTOR EMITTER VOLTAGE V
2001. 12. 6
Revision No : 3
3/3
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