KTC2020D [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT); 外延平面NPN晶体管（通用DPAK FOR SVRFACE MOUNT ）
| 型号： | KTC2020D |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT) |
| 文件： | 总2页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC2020D/L
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DPAK FOR SVRFACE MOUNT APPLICATIONS.
A
C
I
J
FEATURES
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
Low Collector Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
Straight Lead (IPAK, "L" Suffix)
Complementary to KTA1040D/L.
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
_
2.00+0.20
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
J
H
K
L
M
O
P
P
F
L
F
1
2
3
Q
0.95 MAX
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1. BASE
2. COLLECTOR
3. EMITTER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
60
V
DPAK
7
3
V
A
A
C
I
IB
Base Current
0.5
A
J
1.0
Ta=25
Tc=25
Collector Power
Dissipation
PC
W
DIM MILLIMETERS
20
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
_
+
5.0 0.2
Tj
Junction Temperature
150
-55 150
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
P
H
G
_
+
_
+
_
+
Tstg
Storage Temperature Range
G
H
I
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
100
100
-
UNIT
VCB=60V, IE=0
-
-
-
A
A
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
VEB=7V, IC=0
Emitter Cut-off Current
-
60
100
-
IC=50mA, IB=0
Collector-Emitter Breakdown Voltage
DC Current Gain
-
V
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
-
300
1.0
1.0
-
-
V
Collector Emitter Saturation Voltage
Base-Emitter Voltage
0.5
0.7
30
35
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
-
V
fT
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
OUTPUT
ton
tstg
tf
Turn-on Time
-
-
-
0.65
1.3
-
-
-
20µsec
I
B1
I
B2
INPUT
B2
I
B1
I
15Ω
Storage Time
Fall Time
Switching Time
S
I
=-I =0.2A
B2
B1
0.65
V
CC
=30V
<
DUTY CYCLE 1%
=
Note : hFE Classification
Y:100~200, GR:150~300.
2003. 3. 27
Revision No : 5
1/2
KTC2020D/L
I C - VCE
Pc - Ta
3.0
2.5
2.0
1.5
1.0
0.5
0
32
28
24
20
16
90
80
70
60
50
40
30
20
I
=10mA
B
12
8
4
COMMON EMITTER
Tc=25 C
Ta=25 C
50
0
0
0
1
2
3
4
5
6
7
8
0
25
75 100 125 150 175 200
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
hFE - IC
300
100
10
I
I
MAX(PULSED)*
MAX
C
C
5
3
(CONTINUOUS)
50
30
1
0.5
0.3
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
COMMON EMITTER
=5V
V
CE
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
10
0.02 0.05 0.1
0.3
1
3
10
COLLECTOR CURRENT I (A)
C
0.1
1
3
5
10
30 50
100
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
VCE(sat) - IC
1
COMMON EMITTER
/I =10
I
C
B
0.5
0.3
0.1
Tc=25 C
Tc=-25 C
0.05
0.03
0.02 0.05 0.1
0.3
1
3
5
10
COLLECTOR CURRENT I (A)
C
2003. 3. 27
Revision No : 5
2/2
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