KTC3072L [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO); 外延平面NPN晶体管（高电流相机频闪）
| 型号： | KTC3072L |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO) |
| 文件： | 总3页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A
C
I
J
FEATURES
DIM MILLIMETERS
Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
_
2.00+0.20
J
H
K
L
M
O
P
P
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
F
L
F
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
1
2
3
Q
0.95 MAX
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
1. BASE
2. COLLECTOR
3. EMITTER
20
V
7
V
DC
5
8
Collector
Current
A
DPAK
ICP
Pulse (Note1)
PC
Collector Power Dissipation
Junction Temperature
1.0
W
A
C
I
Tj
150
J
Tstg
Storage Temperature Range
-55 150
Note 1: Pulse Width 100mS, Duty Cycle 30%
DIM MILLIMETERS
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
_
+
5.0 0.2
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
P
H
G
_
+
_
+
_
+
G
H
I
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
SYMBOL
V(BR)CBO
TEST CONDITION
IC=100 A, IE=0
MIN.
TYP.
MAX.
UNIT
V
40
20
7
-
-
-
V(BR)CEO
V(BR)EBO
ICBO
IC=1mA, IB=0
IE=10 A, IC=0
VCB=20V, IE=0
VEB=7V, IC=0
-
V
-
-
V
-
-
100
100
700
-
nA
nA
IEBO
Emitter Cutoff Current
-
-
hFE(1)(Note1) VCE=2V, IC=0.5A
120
100
-
-
DC Current Gain
hFE(2)
VCE(sat)
fT
VCE=2V, IC=2A
-
-
IC=3A, IB=60mA(Pulse)
VCE=6V, IC=50mA
Collector-Emitter Saturation Voltage
Transition Frequency
0.4
-
V
MHz
pF
20
-
100
-
Cob
VCB=20V, f=1MHz, IE=0
Collector Output Capacitance
50
Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700
2003. 3. 27
Revision No : 3
1/3
KTC3072D/L
Pc - Ta
IC - VCE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.4
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
Ta=25 C
7mA
6mA
5mA
4mA
3mA
2mA
I
=1mA
B
0
0
20
40
60
80
100 120 140 160
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
IC - VBE
IC - VCE(sat)
8
8
7
6
5
4
3
V
=10V
I
/I =30
B
C
CE
7
6
5
4
3
Ta=25 C
Ta=25 C
2
1
0
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
COLLECTOR-EMITTER SATURATION
BASE-EMITTER VOLTAGE V
(V)
BE
VOLTAGE V
(V)
CE(sat)
hFE - IC
f T
-
IE
400
300
200
100
0
800
700
600
500
400
300
200
100
0
V
=2V
V
=6V
CE
CE
Ta=25 C
Ta=25 C
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I
(A)
EMITTER CURRENT I (A)
E
C
2003. 3. 27
Revision No : 3
2/3
KTC3072D/L
Cob - VCB
SAFE OPERATION AREA
100
80
60
40
20
0
100
30
I
=0
E
f=1MHz
Ta=25 C
I
I
MAX.(PULSED)*
C
C
10
t=10ms
MAX.
3
*
1
0.3
0.1
0.03
0.01
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
1
3
5
10
30 50
100
0.1
0.3
1
3
10
30
100
COLLECTOR BASE VOLTAGE V
(V)
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CB
2003. 3. 27
Revision No : 3
3/3
相关型号：
KTC3192
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
MCC
KTC3192-BP
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明