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KTC3200_03 [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
KTC3200_03
型号： KTC3200_03
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

EPITAXIAL PLANAR NPN TRANSISTOR
外延平面NPN晶体管

晶体 晶体管 局域网
文件： 总2页 (文件大小：58K)
中文：  中文翻译
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SEMICONDUCTOR  
KTC3200  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
LOW NOISE AUDIO AMPLIFIER APPLICATION.  
B
C
FEATURES  
The KTC3200 is a transistor for low frequency and low noise applications.  
This device is designed to ower noise figure in the region of low signal  
source impedance, and to lower the pulse noise.  
This is recommended for the first stages of equalizer amplifiers.  
Low Noise  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
: NF=4dB(Typ.), Rg=100 , VCE=6V, IC=100 A, f=1kHz  
: NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz.  
Low Pulse Noise : Low 1/f Noise.  
1.00  
F
1.27  
G
H
J
0.85  
0.45  
_
14.00 +0.50  
H
High DC Current Gain : hFE=200 700.  
K
L
0.55 MAX  
2.30  
F
F
High Breakdown Voltage : VCEO=120V .  
M
0.45 MAX  
1.00  
Complementary to KTA1268.  
N
3
1
2
1. EMITTER  
2. COLLECTOR  
3. BASE  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
120  
UNIT  
V
TO-92  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
120  
V
5
V
100  
mA  
mA  
mW  
IE  
Emitter Current  
-100  
625  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Tj  
150  
Tstg  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
nA  
VCB=120V, IE=0  
-
-
100  
100  
-
IEBO  
VEB=5V, IC=0  
-
-
-
nA  
V(BR)CEO  
hFE(Note)  
VCE(sat)  
VBE  
IC=1mA, IB=0  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
120  
V
VCE=6V, IC=2mA  
IC=10mA, IB=1mA  
VCE=6V, IC=2mA  
VCE=6V, IC=1mA  
VCB=10V, IE=0, f=1MHz  
200  
-
700  
0.3  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
-
-
-
-
-
-
-
V
V
0.65  
100  
3.0  
-
fT  
Transition Frequency  
-
MHz  
pF  
Cob  
Collector Output Capacitance  
-
6.0  
2.0  
-
VCE=6V, IC=100 A, f=10Hz, Rg=10k  
VCE=6V, IC=100 A, f=1kHz, Rg=10k  
VCE=6V, IC=100 A f=1kHz, Rg=100  
-
Noise Figure  
NF  
dB  
4.0  
Note : hFE Classification GR:200 400, BL:350 700  
2003. 1. 15  
Revision No : 1  
1/2  
KTC3200  
h FE - IC  
NF - Rg , IC  
1k  
100k  
10k  
1k  
COMMON  
EMITTER  
12  
500  
300  
Ta=100 C  
V
CE  
=6V  
8
6
f=1kHz  
Ta=25 C  
Ta=-25 C  
4
2
NF=1dB  
100  
50  
30  
NF=1dB  
2
3
COMMON EMITTER  
=6V  
4
V
CE  
100  
10  
6
8
10  
10  
0.1  
0.3  
1
3
10  
30  
100  
300  
12  
COLLECTOR CURRENT I (mA)  
C
10  
100  
1k  
10k  
COLLECTOR CURRENT I (µA)  
C
Cob - VCB  
10  
f=1MHz  
I
=0  
E
Ta=25 C  
5
3
NF - Rg , I C  
100k  
10k  
COMMON EMITTER  
=6V  
V
CE  
f=10Hz  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
3
COLLECTOR-BASE VOLTAGE V  
(V)  
CB  
1k  
100  
10  
3
h PARAMETER - VCE  
10  
100  
1k  
10k  
300  
COLLECTOR CURRENT I (µA)  
h
C
fe  
100  
COMMON EMITTER  
=-1mA  
I
50  
30  
E
f=270Hz  
Ta=25 C  
10  
h
(xkΩ)  
(x10-5  
ie  
5
3
h
h
)
re  
Ω
(xµ  
)
oe  
1
0.5  
1
3
5
10  
30 50 100 200  
COLLECTOR-EMITTER VOLTAGE V  
CE  
(V)  
2003. 1. 15  
Revision No : 1  
2/2  

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