KTN2222U_12 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTN2222U_12 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总5页 (文件大小：776K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTN2222U/AU
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
· Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
· Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
· Complementary to the KTN2907U/2907AU.
MAXIMUM RATING (Ta=25℃)
RATING
CHARACTERISTIC
SYMBOL
UNIT
KTN2222U KTN2222AU
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
30
5
75
40
6
V
V
V
Collector Current
600
100
mA
Collector Power Dissipation
(Ta=25℃)
PC
mW
Tj
Junction Temperature
150
℃
℃
Tstg
Storage Temperature Range
-55∼ 150
MARK SPEC
TYPE
MARK
KTN2222U
KTN2222AU
Z B
Z G
2008. 8. 29
Revision No : 3
1/5
KTN2222U/AU
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
ICEX
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCE=60V, VEB(OFF)=3V
VCB=50V, IE=0
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
KTN2222AU
KTN2222U
KTN2222AU
KTN2222AU
KTN2222U
-
-
-
-
-
-
-
-
10
0.01
0.01
10
nA
μA
nA
ICBO
IEBO
VCB=60V, IE=0
VEB=3V, IC=0
60
75
30
-
-
-
-
-
-
Collector-Base
V(BR)CBO
IC=10μA, IE=0
V
Breakdown Voltage
KTN2222AU
KTN2222U
Collector-Emitter
*
V(BR)CEO
IE=10mA, IB=0
V
V
Breakdown Voltage
KTN2222AU
40
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
KTN2222U
Emitter-Base
V(BR)EBO
IE=10μA, IC=0
Breakdown Voltage
KTN2222AU
6
-
hFE(1)
hFE(2)
hFE(3)
hFE(4)
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
35
50
75
100
30
40
-
-
-
KTN2222U
KTN2222AU
-
DC Current Gain
*
300
-
KTN2222U
KTN2222AU
KTN2222U
KTN2222AU
KTN2222U
KTN2222AU
KTN2222U
KTN2222AU
KTN2222U
KTN2222AU
KTN2222U
KTN2222AU
hFE(5)
IC=500mA, VCE=10V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
-
0.4
0.3
1.6
1
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
1
2
1
2
-
Collector-Emitter
Saturation Voltage
*
*
V
V
-
-
-
1.3
1.2
2.6
2.0
-
0.6
-
Base-Emitter
Saturation Voltage
-
250
300
-
VCE=20V, IC=20mA,
f=100MHz
fT
Transition Frequency
Collector Output Capacitance
Input Capacitance
MHz
pF
-
Cob
Cib
VCB=10V, IE=0, f=1.0MHz
8
KTN2222U
-
30
25
VEB=0.5V, IC=0, f=1.0MHz
pF
KTN2222AU
-
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
2008. 8. 29
Revision No : 3
2/5
KTN2222U/AU
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
hie
TEST CONDITION
MIN.
TYP. MAX. UNIT
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IE=20mA, VCB=20V, f=31.8MHz
2
0.25
-
-
-
-
-
-
-
-
-
-
8
1.25
8
Input Impedance
KTN2222AU
KTN2222AU
KTN2222AU
KTN2222AU
kΩ
Voltage Feedback Ratio
Small-Singal Current Gain
Collector Output Admittance
x10-4
hre
hfe
hoe
-
4
50
75
5
300
375
35
Ω
μ
25
-
200
150
Collector-Base Time Constant
Noise Figure
KTN2222AU
KTN2222AU
Cc· rbb'
pS
IC=100μA, VCE=10V,
Rg=1kΩ , f=1kHz
NF
-
-
4
dB
td
tr
Delay Time
Rise Time
-
-
-
-
-
-
-
-
10
25
VCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
Switching Time
nS
tstg
tf
Storage Time
Fall Time
225
60
VCC=30V, IC=150mA
IB1=-IB2=15mA
2008. 8. 29
Revision No : 3
3/5
KTN2222U/AU
2008. 8. 29
Revision No : 3
4/5
KTN2222U/AU
2008. 8. 29
Revision No : 3
5/5
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