MJE13007G-XS-TF1-T [UTC]
Power Field-Effect Transistor,;![MJE13007G-XS-TF1-T](http://pdffile.icpdf.com/pdf2/p00266/img/icpdf/MJE13007G-XS_1598808_icpdf.jpg)
型号: | MJE13007G-XS-TF1-T |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, |
文件: | 总3页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
UNISONIC TECHNOLOGIES CO., LTD
MJE13007-XS
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
1
TO-220
APPLICATIONS
1
TO-220F
DESCRIPTION
The UTC MJE13007-XS is designed for high-voltage,
high-speed power switching inductive circuits where fall time is
critical. It is particularly suited for 115V and 220V switch mode
applications.
1
TO-220F1
FEATURES
* VCEO(SUS) 400V
* 700V Blocking Capability
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
3
E
E
E
MJE13007L-XS-TA3-T
MJE13007L-XS-TF1-T
MJE13007L-XS-TF3-T
MJE13007G-XS-TA3-T
MJE13007G-XS-TF1-T
MJE13007G-XS-TF3-T
TO-220
TO-220F1
TO-220F
C
C
C
Tube
Tube
Tube
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MJE13007G-XS-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
MJE13007
L: Lead Free
G: Halogen Free
Date Code
Lot Code
1
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-028.D
MJE13007-XS
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCEO
VCBO
VCES
VEBO
IC
RATINGS
400
700
700
9.0
UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
V
V
Emitter-Base Voltage
V
Continuous
Peak (1)
TO-220
5
A
Collector Current
ICM
10
A
80
W
Power Dissipation (TC = 25°C)
PD
TO-220F
TO-220F1
36
W
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
θJA
Junction to Ambient
1.56
TO-220
θJC
Junction to Case
TO-220F
TO-220F1
3.28
°C/W
Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(SUS) IC=10mA, IB=0
400
V
VCES=700V
ICBO
0.1
1.0
100
40
mA
mA
μA
VCES=700V, TC=125°C
IEBO
hFE1
hFE2
VEB=9.0V, IC=0
IC=2.0A, VCE=5.0V
IC=5.0A, VCE=5.0V
8.0
5.0
DC Current Gain
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
RESISTIVE LOAD (TABLE 1)
Delay Time
VCE(SAT) IC=5.0A, IB=1.0A
VBE(SAT) IC=5.0A, IB=1.0A
2.0
1.6
V
V
COB
VCB=10V, IE=0, f=0.1MHz
57
pF
tD
tR
tS
tF
0.025 0.1
μs
μs
μs
μs
VCC=125V, IC=5.0A,
IB1=IB2=1.0A, tP=25μs,
Duty Cycle≤1.0%
Rise Time
0.5
1.8
1.5
3.0
0.7
Storage Time
Fall Time
0.23
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
QW-R223-028.D
www.unisonic.com.tw
MJE13007-XS
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
vs.
itter Saturation Voltage
lector
Gain vs. Col
Current
Base-Em
IC/IB=5
DC Current
Collector
Current
40
35
30
25
1.4
1.2
1
VCE=5V
TA=125°C
0.8
0.6
0.4
0.2
0
TA=25°C
75°C
25°C
20
15
10
5
75°C
125°C
0
0.01
0.1
1
10
0.001
0.01
0.1
10
1
rrent, I (A)
Collector Cu
rrent, I (A)
Collector Cu
C
C
Collector-Emitter Saturation Voltage vs.
Collector Current
6
5
4
IC/IB=5
3
2
1
0
TA=125°C
75°C
25°C
0.01
0.1
1
10
Collector Current, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
QW-R223-028.D
www.unisonic.com.tw
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00300/img/page/BD243CU_1815062_files/BD243CU_1815062_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00300/img/page/BD243CU_1815062_files/BD243CU_1815062_2.jpg)
MJE13007L
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明