MBRB20100CT-8W [KERSEMI]
Trench MOS Schottky technology; 沟槽MOS肖特基技术
| 型号： | MBRB20100CT-8W |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总4页 (文件大小：1678K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR(F,B)2090CT & MBR(F,B)20100CT
FEATURES
TMBS®
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
TO-220AB
ITO-220AB
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
3
peak of 245 °C (for TO-263AB package)
3
2
2
MBR2090CT
MBR20100CT
PIN 1
MBRF2090CT
MBRF20100CT
1
1
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
PIN 2
CASE
PIN 1
PIN 2
PIN 3
PIN 3
TO-263AB
K
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
2
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
1
MBRB2090CT
MBRB20100CT
PIN 1
K
MECHANICAL DATA
PIN 2
HEATSINK
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 10 A
90 V, 100 V
150 A
E3 suffix meets JESD 201 class 1A whisker test
VF
0.65 V
Polarity: As marked
TJ max.
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
90
90
90
100
100
100
V
V
V
total device
per diode
20
10
Maximum average forward rectified current at TC = 133 °C
IF(AV)
IFSM
EAS
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
150
130
0.5
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
mJ
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
1500
V
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1
MBR(F,B)2090CT & MBR(F,B)20100CT
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
IF = 10 A
TC = 25 °C
C = 125 °C
TC = 125 °C
0.80
0.65
0.75
Maximum instantaneous forward voltage per diode (1) IF = 10 A
IF = 20 A
T
VF
V
Maximum reverse current per diode at working peak
reverse voltage (2)
TJ = 25 °C
TJ = 100 °C
100
6.0
µA
mA
IR
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJA
RθJC
60
2.0
-
60
2.0
Typical thermal resistance per diode
°C/W
3.5
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBR20100CT-E3/4W
MBRF20100CT-E3/4W
MBRB20100CT-E3/4W
MBRB20100CT-E3/8W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
1.88
1.75
1.38
1.38
4W
4W
4W
8W
50/tube
50/tube
50/tube
800/reel
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
20
160
140
120
100
80
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
MBR &
MBRB
MBRF
16
12
8
4
60
40
1
0
50
Case Temperature (°C)
150
10
100
0
100
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
MBR(F,B)2090CT & MBR(F,B)20100CT
100
10
100
Junction to Case
TJ = 150 °C
10
TJ = 125 °C
1
1
0.1
0.01
TJ = 25 °C
MBR(B)
100
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
0.1
1
10
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
TJ = 150 °C
Junction to Case
10
1
0.1
TJ = 125 °C
1
0.1
0.01
0.01
TJ = 25 °C
MBRF
0.001
0.1
0.001
100
10
20
30
40
50
60
70
80
90 100
1
10
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10 000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
1
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
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3
MBR(F,B)2090CT & MBR(F,B)20100CT
PACKAGE OUTLINE DIMENSIONS
TO-220AB
ITO-220AB
0.404(10.26)
0.384(9.75)
0.415 (10.54) MAX.
0.190(4.83)
0.170(4.32)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.076 Ref.
(1.93) Ref.
0.110(2.79)
0.100(2.54)
0.148 (3.74)
0.076 Ref.
(1.93)
Ref.
7°Ref.
0.113 (2.87)
45°Ref.
0.103 (2.62)
0.140(3.56)DIA.
0.125(3.17)DIA.
0.135(3.43)DIA.
0.122(3.08)DIA.
0.671(17.04)
0.651(16.54)
0.145 (3.68)
0.600(15.24)
0.580(14.73)
0.135 (3.43)
PIN
7°Ref.
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.350(8.89)
0.330(8.38)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191(4.85)
0.171(4.35)
7°Ref.
0.560(14.22)
0.530(13.46)
0.110 (2.79)
0.100 (2.54)
0.057(1.45)
0.045(1.14)
0.057 (1.45)
0.045 (1.14)
0.110(2.79)
0.100(2.54)
0.057(1.45)
0.045(1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035(0.89)
0.025(0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025(0.64)
0.015(0.38)
0.105(2.67)
0.095(2.41)
0.104 (2.65)
0.096 (2.45)
0.028 (0.71)
0.020(0.51)
0.022 (0.56)
0.014 (0.36)
0.205(5.21)
0.195(4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.591 (15.00)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
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4
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