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元器件品牌
IRFBE30
[KERSEMI]
Dynamic dV/dt Rating Repetitive Avalanche Rated; 动态的dv / dt额定值额定重复性雪崩
元器件型号:
IRFBE30
生产厂家:
Kersemi Electronic Co., Ltd.
描述和应用:
Dynamic dV/dt Rating Repetitive Avalanche Rated
动态的dv / dt额定值额定重复性雪崩
PDF文件:
总7页 (文件大小:3845K)
下载文档:
下载PDF数据表文档文件
型号参数:IRFBE30参数
查看货源
IRFBE30L
Power MOSFET
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156
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31
VISHAY
IRFBE30L
HEXFET㈢ Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
63
IRF
IRFBE30LPBF
HEXFET Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
53
IRF
IRFBE30LPBF
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
28
VISHAY
IRFBE30PBF
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
152
VISHAY
IRFBE30PBF
Dynamic dV/dt Rating Repetitive Avalanche Rated
Warning
: Undefined variable $rtag in
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on line
156
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26
KERSEMI
IRFBE30S
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
27
VISHAY
IRFBE30S
HEXFET㈢ Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
65
IRF
IRFBE30SPBF
HEXFET Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
46
IRF
IRFBE30SPBF
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
17
VISHAY
IRFBE30STRLPBF
Power MOSFET
Warning
: Undefined variable $rtag in
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on line
156
-
24
VISHAY
IRFBE30STRR
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRFBE30STRRPBF
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Warning
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156
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0
VISHAY
IRFBE32
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.2A I(D) | TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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52
ETC
IRFBF20
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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148
IRF
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