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IRFR5410 [KERSEMI]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRFR5410


元器件型号：	IRFR5410
生产厂家：	Kersemi Electronic Co., Ltd.
描述和应用：	HEXFET Power MOSFET HEXFET功率MOSFET
PDF文件：	总10页 (文件大小：2009K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR5410参数

IRFR5410HR

Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 IRF

IRFR5410PBF

HEXFET POWER MOSFET

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25 KERSEMI

IRFR5410PBF

HEXFET Power MOSFET

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115 IRF

IRFR5410TR

Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3

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0 IRF

IRFR5410TRL

AUTOMOTIVE GRADE

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20 KERSEMI

IRFR5410TRLPBF

Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3

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0 IRF

IRFR5410TRPBF

Ultra Low On-Resistance

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143 IRF

IRFR5410TRR

AUTOMOTIVE GRADE

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41 KERSEMI

IRFR5410TRRPBF

Ultra Low On-Resistance

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20 IRF

IRFR5505

Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

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620 IRF

IRFR5505

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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12 IRF

IRFR5505GPBF

Ultra Low On-Resistance

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51 IRF

IRFR5505GPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 INFINEON

IRFR5505GTRLPBF

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 INFINEON

IRFR5505GTRPBF

ultra low on-resistance

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18 IRF

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