2SC2873 [KEXIN]
Silicon PNP Epitaxial Type; PNP硅外延型
| 型号： | 2SC2873 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Epitaxial Type |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Epitaxial Type
2SC2873
Features
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A).
High speed switching time: tstg = 1.0 s (typ.).
Small flat package.
PC = 1.0 to 2.0 W
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
IC
50
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
2
V
A
Base current
IB
0.4
A
PC
500
mW
mW
Collector power dissipation
PC *1
Tj
1000
150
Junction temperature
Storage temperature range
Tstg
-55 to +150
*1 Mounted on ceramic substrate (250 mm2 X 0.8 t)
1
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SMD Type
Transistors
2SC2873
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC = 10 mA, IB = 0
Min
50
Typ
Max
Unit
V
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
VCEO
ICBO
IEBO
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
0.1
0.1
240
A
A
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 2.0 A
70
20
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
VCE (sat) IC = 1 A, IB = 0.05 A
VBE (sat) IC = 1 A, IB = 0.05 A
0.5
1.2
V
V
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Turn-on time
Storage time
ton
0.1
s
s
tstg
1.0
Fall time
tf
0.1
s
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
hFE Classification
Marking
Rank
MO
O
MY
Y
hFE
70 140
120 240
2
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相关型号：
2SC2873-Y(TE12L,ZC
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
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