2SC3736 [KEXIN]

NPN Silicon Epitaxia; NPN硅Epitaxia
2SC3736
型号: 2SC3736
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

NPN Silicon Epitaxia
NPN硅Epitaxia

晶体 晶体管 开关
文件: 总1页 (文件大小:51K)
中文:  中文翻译
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SMD Type  
Transistors  
NPN Silicon Epitaxia  
2SC3736  
Features  
High speed,high voltage switching.  
Low collector saturation voltage.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
80  
45  
V
5
V
Collector current  
1
A
Collector current (Pulse)*  
Total power dissipation  
Junction temperature  
ICP  
2
A
PT  
2
W
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
* PW 10ms,duty cycle 50%.  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
Min  
60  
Typ  
Max  
0.5  
0.5  
200  
0.4  
1.2  
Unit  
nA  
ICBO  
IEBO  
hFE  
VCB = 45V, IE=0  
VEB = 4V, IC=0  
nA  
VCE = 10V , IC = 50mA  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = 500mA , IB = 50mA  
VBE(sat) IC = 500mA , IB = 50mA  
0.17  
0.9  
380  
6.7  
20  
V
V
fT  
Cob  
ton  
VCE = 10V , IE = -100mA  
300  
MHz  
pF  
ns  
VCB = 10V , IE = 0, f = 1.0MHz  
10  
40  
Turn-on time  
IC = 500mA , IB1 = IB2 = 50mA  
Storage time  
tstg  
toff  
55  
80  
ns  
Turn-off time  
72  
100  
ns  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
OL  
OK  
60 120  
100 200  
1
www.kexin.com.cn  

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