2SC3736 [KEXIN]
NPN Silicon Epitaxia; NPN硅Epitaxia型号: | 2SC3736 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | NPN Silicon Epitaxia |
文件: | 总1页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Epitaxia
2SC3736
Features
High speed,high voltage switching.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
80
45
V
5
V
Collector current
1
A
Collector current (Pulse)*
Total power dissipation
Junction temperature
ICP
2
A
PT
2
W
Tj
150
Storage temperature
Tstg
-55 to +150
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Symbol
Testconditons
Min
60
Typ
Max
0.5
0.5
200
0.4
1.2
Unit
nA
ICBO
IEBO
hFE
VCB = 45V, IE=0
VEB = 4V, IC=0
nA
VCE = 10V , IC = 50mA
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
0.17
0.9
380
6.7
20
V
V
fT
Cob
ton
VCE = 10V , IE = -100mA
300
MHz
pF
ns
VCB = 10V , IE = 0, f = 1.0MHz
10
40
Turn-on time
IC = 500mA , IB1 = IB2 = 50mA
Storage time
tstg
toff
55
80
ns
Turn-off time
72
100
ns
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
OL
OK
60 120
100 200
1
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