2SD1221-Y [KEXIN]
NPN Transistors;
| 型号： | 2SD1221-Y |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors 放大器 晶体管 |
| 文件： | 总3页 (文件大小：1335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1221
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
■ Features
5.30
-0.2
0.50
● Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (I
● High power dissipation: P
● Complementary to 2SB906
C
= 3 A, I
B = 0.3 A)
C
= 20 W (Tc = 25°C)
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
60
60
7
I
C
3
A
I
B
0.5
1
20
Collector Power Dissipation
Ta = 25℃
Tc = 25℃
P
C
W
℃
Junction Temperature
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 50 mA， I = 0
= 100μA， I = 0
CB= 60 V , I = 0
EB= 7V , I =0
Min
60
60
7
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
V
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitte voltage
V
CE(sat)
BE(sat)
I
I
C
=3 A, I
B
=300mA
=300mA
0.4
0.7
V
C=3 A, I
B
1.2
1
V
BE
V
V
V
CE= 5V, I
CE= 5V, I
CE= 5V, I
C= 500mA
C= 500mA
C= 3 A
h
FE(1)
FE(2)
60
20
300
DC current gain
h
Turn-on time
t
on
0.8
1.5
0.8
70
3
See specified Test Circuit
us
Storage time
t
stg
Fall time
t
f
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
E= 0,f=1MHz
pF
f
CE= 5V, I = 500mA
C
MHz
■ Classification of hfe(1)
Type
2SD1221-O
2SD1221-Y
100-200
2SD1221-G
150-300
Range
60-120
1
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SMD Type
Transistors
NPN Transistors
2SD1221
Switching Time Test Circuit
OUTPUT
20 μs
I
B1
INPUT
I
B2
I
B2
V
= 30 V
CC
I
= −I = 0.2 A, DUTY CYCLE ≤ 1%
B2
B1
■ Typical Characterisitics
I
– V
I – V
C BE
C
CE
3.0
2.0
1.0
0
90
80
70
Common emitter
Tc = 25°C
Common emitter
V = 5 V
CE
3.0
2.0
1.0
0
60
50
40
30
20
= 10 mA
I
B
Tc = 100°C
−25
25
0
0
2
4
6
8
0
0.4
0.8
1.2
1.6
Collector-emitter voltage
V
CE
(V)
Base-emitter voltage
V
BE
(V)
h
– I
V
– I
CE (sat) C
FE
C
1
500
300
Common emitter
= 5 V
Common emitter
I /I = 10
C
V
CE
B
0.5
0.3
Tc = 100°C
25
100
−25
Tc = 100°C
25
0.1
50
30
0.05
−25
0.02
10
0.03
0.1
0.3
1
3
0.03
0.1
0.3
1
3
Collector current
I
C
(A)
Collector current
I
C
(A)
2
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SMD Type
Transistors
NPN Transistors
2SD1221
■ Typical Characterisitics
Safe Operating Area
10
P
– Ta
C
I
max (pulsed)*
C
I
24
20
16
12
8
1 ms*
5
3
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 mm × 50 mm × 0.8 mm
(3) No heat sink
10 ms*
100 ms*
(1)
max (continuous)
C
DC operation
(Tc = 25°C)
1
0.5
0.3
*: Single nonrepetitive pulse
Tc = 25°C
4
Curves must be derated linearly with
increase in temperature.
(2)
(3)
V
max
CEO
30
0
0
0.1
1
25
50
75
100
125
150
175
3
10
100
Ambient temperature Ta (°C)
Collector-emitter voltage
V
CE
(V)
3
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