BSS64 [KEXIN]
NPN General Purpose Amplifier; NPN通用放大器型号: | BSS64 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | NPN General Purpose Amplifier |
文件: | 总1页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN General Purpose Amplifier
BSS64
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
NPN general purpose amplifier
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-emitter voltage
Symbol
VCE0
VCBO
VEBO
IC
Rating
Unit
V
80
120
Collector-base voltage
Emitter-base voltage
Collector current
V
5
V
200
mA
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Total device dissipation
Derate above 25
mW
350
2.8
PD
mW/
Thermal resistance, junction to ambient
RèJA
357
/W
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Symbol
Testconditons
Min
80
Typ
Max
Unit
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO IC = 4.0 mA, IB = 0
V(BR)CBO IC = 100 ìA, IE = 0
V(BR)EBO IE = 100 ìA, IC = 0
120
5
V
V
VCB = 90 V, IE = 0
ICBO
0.1
50
ìA
ìA
nA
Collector-cutoff current
VCB = 90 V, IE = 0, TA = 150
Emitter-base cut-off current
DC current gain
IEBO
VEB = 5.0 V, IC = 0
200
hFE
IC = 10 mA, VCE = 1.0 V
IC = 4.0 mA, IB = 400ìA
IC = 50 mA, IB = 15 mA
IC = 4.0 mA, IB = 400 ìA
20
60
0.15
0.2
V
V
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
Current gain - bandwidth product
Output capacitance
VBE(sat)
fT
1.2
V
IC = 4.0 mA, VCE = 10,f = 35 MHz
VCB = 10 V, f = 1.0 MHz
MHz
pF
Cob
5
Marking
Marking
U3
1
www.kexin.com.cn
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