BST52 [KEXIN]

NPN Darlington Transistors; NPN达林顿晶体管
BST52
型号: BST52
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

NPN Darlington Transistors
NPN达林顿晶体管

晶体 晶体管 达林顿晶体管 开关
文件: 总2页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Type  
Transistors  
NPN Darlington Transistors  
KST50; KST51; KST52  
(BST50; BST51; BST52)  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
Features  
+0.1  
1.80  
-0.1  
High current (max. 0.5 A)  
Low voltage (max. 80 V)  
Integrated diode and resistor.  
+0.1  
0.48  
-0.1  
+0.1  
0.53  
-0.1  
+0.1  
0.44  
-0.1  
1. Base  
+0.1  
3.00  
-0.1  
2. Collector  
3. Emiitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
Unit  
V
KST50  
KST51  
KST52  
KST50  
KST51  
KST52  
60  
Collector-base voltage  
Collector-emitter voltage  
80  
V
90  
V
45  
V
VCEO  
60  
V
80  
V
Emitter-base voltage  
Collector current (DC)  
Peak collector current  
base current  
VEBO  
IC  
5
0.5  
V
A
ICM  
1.5  
A
IB  
100  
mA  
W
K/W  
K/W  
PD  
1.3  
Power dissipation Tamb 25  
*
Thermal resistance from junction to ambient *  
Thermal resistance from junction to solder point  
Junction temperature  
Rth(j-a)  
Rth(j-s)  
Tj  
96  
16  
150  
Storage temperature  
Tstg  
-65 to +150  
* Device mounted on a printed-circuit board, single sided copper, tinplated,  
mounting pad for collector 6 cm2.  
1
www.kexin.com.cn  
SMD Type  
Transistors  
KST50; KST51; KST52  
(BST50; BST51; BST52)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICES  
Testconditons  
VBE=0;VCE=45V  
Min  
Typ  
Max  
50  
Unit  
nA  
nA  
nA  
nA  
KST50  
Collector cutoff current  
KST51  
KST52  
VBE=0;VCE=60V  
50  
VBE=0;VCE=80V  
50  
Emitter cutoff current  
DC current gain  
IEBO  
hFE  
VEB = 4V, IC = 0  
50  
IC = 150mA; VCE = 10 V  
IC =500 mA; VCE = 10V  
IC = 500 mA; IB = 0.5 mA  
IC = 500 mA; IB = 0.5mA;TJ=150  
1000  
2000  
1.3  
1.3  
1.9  
V
V
Collector-emitter saturation voltage  
VCE(sat)  
Base to emitte rsaturation voltage  
turn-on time  
VBE(sat) IC = 500 mA; IB=0.5mA  
V
ton  
toff  
fT  
ICon = 500 mA; IBon = 0.5 mA;  
IBoff = -0.5 mA  
400  
1500  
200  
ns  
ns  
MHz  
turn-off time  
Transition frequency  
IC = 500 mA; VCE = 5 V; f = 100 MHz  
Marking  
NO.  
KST50  
AS1  
KST51  
AS2  
KST52  
AS3  
Marking  
2
www.kexin.com.cn  

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