BT169 [KEXIN]
SCR Thyristor;
| 型号： | BT169 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | SCR Thyristor |
| 文件： | 总4页 (文件大小：1849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Thyristor
SCR Thyristor
BT169 (KT169)
1.70 0.1
■ Features
● Repetitive peak off-state voltages :400V
● Average on-state current :0.5A
● RMS on-state current :0.8A
● Non-repetitive peak on-state current :8A
0.42 0.1
0.46 0.1
1:GATE
2:ANODE
3:CATHODE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
V
Peak Repetitive Forward and Reverse Blocking
Voltages
BT169-400
V
DRM
V
RRM
400
Average on-state Current
I
T(AV)
0.5
Forward Current RMS
I
T(RMS)
0.8
A
Non-Repetitive Peak on-state Current (t=10ms)
Non-Repetitive Peak on-state Current (t=8.3ms)
Circuit Fusing Considerations (t = 10ms)
8
I
TSM
9
I2t
A2s
A/us
A
0.32
Repetitive Rate of rise of on-state Current after Triggering
Peak Gate Current
dIT/d
t
50
I
GM
1
Peak Gate Voltage
V
GM
5
V
W
Peak Gate Voltage ─ Reverse
Peak Gate Power ─ Forward
V
GRM
5
2
PGM
GF(AV)
P
0.1
Average Gate Power ─ Forward
Thermal Resistance Junction to Ambient
R
thJA
150
K/W
℃
Thermal Resistance Junction to Case
Junction Temperature
RthJC
60
T
J
125
Storage Temperature Range
T
stg
-40 to 150
1
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SMD Type
Thyristor
SCR Thyristor
BT169 (KT169)
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Parameter
Symbol
Test Conditions
Min
400
Typ.
Max
Unit
V
Peak Repetitive Forward and Reverse
Blocking Voltages
V
DRM
V
RRM
I
DRM=IRRM50uA
Off-state Leakage Current
On-state Voltage
I
D
,I
R
0.1
1.5
0.8
mA
V
DRM=VRRM(max);T
j=125℃; RGK=1kΩ
V
TM
I
T
=1A
V
V
V
V
V
V
V
D
D
D
D
D
=12V, IT=10mA
= VDRM(max), I
=12V, I =10mA
Gate Trigger Voltage
V
GT
0.2
T
=10mA; Tj=125℃
Gate Trigger Current (Continuous dc)
Latching Current
I
GT
T
200
6
uA
I
L
=12V, IGT=0.5mA; RGK=1kΩ
=12V, IGT=0.5mA; RGK=1kΩ
mA
Holding Current
I
H
5
DM=67% VDRM(max); Tj=125 ℃
Critical Rate of rise of off-state Voltage
Gate Controlled turn-on time
dVD/dt
tgt
25
2
V/us
us
exponential waveform; RGK=1kΩ
I
TM=2A; V
D=VDRM(max),G=10mA;
dIG/d =0.1A/us
t
V
D
=67% VDRM(max); T
=1.6A; V =35V;
=30A/us,dVD/dt=2V/us; RGK=1kΩ
j=125℃,
Circuit Commutated turn-off time
tq
T
M
R
100
dITM/d
t
■ Classification of IGT (uA)
Type
Range
Marking
BT169-400
0-200
BT169-400A
10-30
BT169-400B
30-60
BT/C39
BT/C35
BT/C36
2
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SMD Type
Thyristor
SCR Thyristor
BT169 (KT169)
■ Typical Characterisitics
ITSM / A
。
P
tot / W
Tc(max) /
C
10
8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
77
83
a=1.57
I
T
I
TSM
conduction
angle
degrees
form
factor
a
1.9
30
60
90
120
180
4
T
89
2.2
2.8
2.2
1.9
1.57
time
•
2.8
6
4
95
•
Tj initial=25 C max
101
107
113
4
2
0
119
125
0
0.1
0.2
0.3
IF(AV) / A
0.4
0.5
0.6
0.7
1
10
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak on-state current
100
1000
FIG.1 Maximum on-state dissipation, Ptot, versus average
on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV)
I
TSM , versus number of cycles, for sinusoidal currents, f = 50Hz.
IT(RMS) / A
2.0
ITSM / A
1000
1.5
1.0
100
I
T
I
TSM
10
1
T
0.5
0
time
。
Tj initial=25 C max
10 s
100 s
1ms
10ms
µ
µ
0.01
0.1
surge duration / s
FIG.5 Maximum permissible repetitive rms on-state current I T(RMS)
1.0
10
T / s
,
FIG.2 Maximum permissible non-repetitive peak on-state current
。
versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83 C
I
TSM ,versus pulse width tp,for sinusoidal currents, t
IT(RMS) / A
p
<=10ms.
VGT(Tj)
1.0
0.8
0.6
0.4
。
VGT(25 C)
1.6
。
83 C
1.4
1.2
1.0
0.8
0.2
0
0.6
0.4
-50
0
50
Tlead / C
100
150
-50
0
50
Tj / C
100
150
。
FIG.3 Maximum permissible rms current I T(RMS) , versus
FIG.6 Normalised gate trigger voltage VGT(Tj) /VGT( 25 C),
lead temperature, Tlead
versus junction temperature Tj
3
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SMD Type
Thyristor
SCR Thyristor
BT169 (KT169)
■ Typical Characterisitics
IGT(Tj)
IT / A
。
VGT(25 C)
5
4
。
3.0
2.5
2.0
1.5
1.0
Tj=125 C - - -
Tj= 25
。
C
Vo=1.067V
Rs=0.187
typ
max
Ω
3
2
0.5
0
-50
1
0
0
50
Tj / C
100
150
0
0.5
1.0
1.5
2.0
VT / V
。
GT
GT
FIG.7 Normalised gate trigger current I (Tj)/I (25 C),
FIG.10 Typical and maximum on-state characteristic.
versus junction temperature Tj
Zth j-lead (K/W)
IL(Tj)
100
。
IL(25 C)
3.0
2.5
2.0
1.5
1.0
10
1
PD
tp
0.1
0.5
0
t
-50
0
50
Tj / C
100
150
0.01
10us 0.1ms 1ms
10ms
tp / s
1s
0.1s
10s
。
FIG.8 Normalised latching current I L(Tj) /I
L
(25 C),versus
FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp.
GK
Ω
junction temperature Tj, R = 1K
IH(Tj)
。
dVD/dt(V/us)
1000
IH(25 C)
3.0
2.5
2.0
1.5
1.0
100
RGK=1K
Ω
10
1
0.5
0
-50
0
50
100
150
0
0
50
150
Tj / C
Tj / C
FIG.12 Typical, critical rate of rise of off-state voltage,
dV /dt versus junction temperature Tj.
。
FIG.9 Normalised holding current I
H
(Tj)/I
H
(25 C),versus
Ω
junction temperature Tj, R GK=1K
D
4
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