FMMTL718 [KEXIN]
Medium Power Transistor; 中功率晶体管
| 型号： | FMMTL718 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Medium Power Transistor |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
FMMTL718
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Very low equivalent on-resistance;RCE(sat)=210mÙ at 1.5A.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
-20
-20
-5
Unit
V
VCBO
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
-1
A
Peak pulse current
ICM
-2
A
Base current
IB
-200
-500
mA
mW
Power dissipation
Ptot
Operating and storage temperature range
Tj,Tstg
-55 to +150
1
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SMD Type
Transistors
FMMTL718
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-20
-20
-5
Typ
-65
-55
-8.8
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=-100ìA
IC=-10mA*
IE=-100ìA
VCB=-15V
VEB=-4V
V
V
-10
-10
-50
nA
nA
IEBO
-33
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
-130 -180
-230 -320
-315 -450
Collector-emitter saturation voltage
VCE(sat)
mV
IC=-1.5A,IB=-100mA
Base-emitter saturation voltage
Base-emitter ON voltage
VBE(sat)
VBE(on)
-950 -1100 mV
IC=-1.25A, IB=-100mA*
IC=-1.25A, VCE=-2V*
-850
-1000 mV
300
300
200
120
50
500
450
320
200
80
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-1A, VCE=-2V*
DC current gain
hFE
IC=-1.5A, VCE=-2V*
Current-gain-bandwidth product
Output capacitance
Turn-on time
fT
265
9
MHz
pF
IC=-50mA, VCE=-10V f=100MHz
VCB=-10V, f=1MHz
Cobo
t(on)
t(off)
12
108
121
ns
IC=-1A, VCC=-10V
Turn-off time
ns
IB1=IB2=-10mA
* Pulse test: tp
300 ìs; d
0.02.
Marking
Marking
L78
2
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