FZT753 [KEXIN]
PNP Silicon Planar Medium Power Transistor; PNP硅平面中功率晶体管
| 型号： | FZT753 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Silicon Planar Medium Power Transistor |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon Planar Medium Power Transistor
FZT753
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
Low saturation voltage
Excellent hFE specified up to 2A
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Rating
Unit
V
-120
Collector-Emitter Voltage
-100
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
IC
-2
2
A
Ptot
W
Tj:Tstg
-55 to +150
1
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SMD Type
Transistors
FZT753
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Testconditons
Min Typ. Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=-100ìA
IC=-10mA*
IE=-100ìA
VCB=-100V
-120
-100
V
-5
V
-0.1
ìA
ìA
ìA
V
Collector Cut-Off Current
ICBO
IEBO
-10
VCB=-100V,Tamb=100
VEB=-4V
Emitter Cut-Off Current
-0.1
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
-0.17 -0.3
-0.30 -0.5
-0.9 -1.25
Collector-Emitter Saturation Voltage
VCE(sat)
V
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
V
-0.8
200
200
170
55
-1.0
V
IC=-50mA, VCE =-2V*
IC=-500mA, VCE =-2V*
IC=-1A, VCE =-2V*
IC=-2A, VCE =-2V*
IC=-100mA, VCE=-5V,f=100MHz
VCB =-10V f=1MHz
70
100
55
300
Static Forward Current Transfer Ratio
hFE
25
Transition Frequency
Output Capacitance
fT
Cobo
ton
100
140
MHz
pF
30
40
ns
Switching Times
IC=-500mA, VCC =-10V,IB1=IB2=-50mA
toff
600
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT753
2
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