KC808A-40 [KEXIN]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | KC808A-40 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon AF Transistors
KC808A(BC808A)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
For general AF applications.
High collector current.
High current gain.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
Low collector-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-30
Unit
V
-25
V
-5
V
-500
-1
mA
A
ICM
IB
-100
310
mA
mW
Total power dissipation
Storage temperature
Junction temperature
Ptot
Tstg
Tj
-65 to +150
150
Electrical Characteristics Ta = 25
Parameter
Symbol
VCBO
Testconditons
Min
Typ
Max
Unit
V
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
IC = -10 µA, IE = 0
IC = -10 mA, IB = 0
IE = -10 µA, IC = 0
VCB = -25 V, IE = 0
-30
-25
-5
VCEO
V
V
VEBO
ICBO
-100
-50
nA
A
Collector cutoff current
Emitter cutoff current
VCB = -25 V, IE = 0 , TA = 150
VEB = -4 V, IC = 0
IEBO
hFE
-100
250
400
630
-0.7
-1.2
nA
KC808A-16
100
160
250
160
250
350
DC current gain *
IC = -100 mA, VCE = -1 V
KC808A-25
KC808A-40
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
V
V
CCb
Ceb
fT
VCB = -10 V, f = 1 MHz
10
60
pF
VEB = -0.5 V, f = 1 MHz
pF
IC = -50 mA, VCE = -5 V, f = 100 MHz
200
MHz
* Pulsed: PW
350 ìs, duty cycle
2%
Marking
NO.
KC808A-16
5E
KC808A-25
5F
KC808A-40
5G
Marking
1
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