KDS8333C [KEXIN]

60V Complementary PowerTrench MOSFET; 60V互补的PowerTrench MOSFET


型号：	KDS8333C
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	60V Complementary PowerTrench MOSFET 60V互补的PowerTrench MOSFET
文件：	总3页 (文件大小：80K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

TransistIoCrs

60V Complementary PowerTrench MOSFET

KDS8333C

Features

N-Channel

4.1 A, 30 V R^DS(ON)= 80m @ VGS = 10 V

RDS(ON) = 130m @ VGS =4.5V

P-Channel

-3.4 A, 30 V R^DS(ON)= 130 m @ VGS =- 10 V

R^DS(ON)= 200 m @ VGS =-4.5V

Low gate charge

High performance trench technology for extremely low RDS(ON).

High power and handling capability in a widely used

surface mount package.

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

N-Channel

P- Channel

Unit

4.1

-60

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

-3.4

-20

I^D

Power Dissipation for Single Operation

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

P^D

1.6

P^D

0.9

(Note 1c)

-55 to 150

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

T^J, TSTG

Thermal Resistance Junction to Case

(Note 1)

www.kexin.com.cn

SMD Type

TransistIoCrs

KDS8333C

Electrical Characteristics Ta = 25

Testconditons

V^GS= 0 V, ID = 250

V^GS= 0 V, ID = -250

Parameter

Symbol

Min

Typ

Max

Unit

N-Ch

P-Ch

N-Ch

Drain-Source Breakdown Voltage

B^VDSS

-30

I^D= 250 A, Referenced to 25

Breakdown Voltage Temperature

Coefficient

mV/

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

-22

I^D= -250 A, Referenced to 25

VDS = 24V, VGS = 0 V

Zero Gate Voltage Drain Current

Gate-Body Leakage

IDSS

I^GSS

V^DS= -24 V, VGS = 0 V

V^GS= 16V, VDS = 0 V

V^GS= 20 V, VDS = 0 V

-1

100

1.7

-1.8

-4.2

V^DS= VGS, ID = 250

V^DS= VGS, ID = -250

Gate Threshold Voltage

V^GS(th)

-1

-3

I^D= 250 A, Referenced to 25

I^D= -250 A, Referenced to 25

Gate Threshold Voltage

Temperature Coefficient

mV/

P-Ch

3.7

V^GS= 10 V, ID =4.1A

Static Drain-Source On-Resistance

R^DS(on)

N-Ch

130

145

130

200

220

V^GS= 10 V, ID = 4.1 A,TJ = 125

V^GS= 4.5 V, ID =3.2 A

V^GS= -10 V, ID =-3.4A

V^GS= -10 V, ID =-3.4 A,TJ = 125

V^GS= -4.5 V, ID =-2.5A

V^GS= 10 V, VDS = 5V

103

105

167

147

R^DS(on)

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

-5

On-State Drain Current

Forward Transconductance

Input Capacitance

I^D(on)

V^GS= -10 V, VDS = -5V

V^DS= 5V, ID = 4.1A

g^FS

V^DS= -5V, ID = -3.4A

282

185

N-Channel

Ciss

V^DS= 10 V, VGS = 0 V,f = 1.0 MHz

Output Capacitance

Coss

Crss

P-Ch

N-Ch

P-Channel

VDS = -10 V, VGS = 0 V,f = 1.0 MHz

Reverse Transfer Capacitance

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

2.3

-9.6

4.5

V^GS= 15 mV, f=1.0MHz

V^GS=-15 mV, f=1.0MHz

Gate Resistance

R^G

t^d(on)

N-Channel

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 10 V, ID = 1 A,

V^GS= 4.5 V, RGEN = 6 (Note 2)

P-Channel

td(off)

t^f

V^DD= -10 V, ID = -1 A,

V^GS= -4.5 V, RGEN = 6 (Note 2)

1.5

4.7

4.1

0.9

0.8

0.6

0.4

6.6

5.7

N-Channel

Q^g

V^DS=10V,ID=4.1A,VGS=4.5V

R^GEN= 6 (Note 2)

P-Channel

Qgs

Q^gd

V^DS=-10V,ID=-3.4A,VGS=-4.5V(Note 2)

www.kexin.com.cn

SMD Type

TransistIoCrs

KDS8333C

Electrical Characteristics Ta = 25

Testconditons

Parameter

Symbol

V^SD

Min

Typ

0.8

Max

1.2

Unit

V^GS= 0 V, IS = 1.3A (Not 2)

V^GS= 0 V, IS = -1.3A (Not 2)

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

Drain-Source Diode Forward Voltage

0.8

-1.2

16.3

14.5

26.7

21.1

I^F= 4.1 A, diF/dt = 100 A/

I^F= -3.4 A, diF/dt = 100 A/

I^F= 4.1 A, diF/dt = 100 A/

I^F= -3.4 A, diF/dt = 100 A/

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

trr

Q^rr

www.kexin.com.cn

相关型号：