KDS8928A [KEXIN]
Dual N & P-Channel Enhancement Mode Field Effect Transistor; 双N和P沟道增强型场效应晶体管
| 型号： | KDS8928A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Dual N & P-Channel Enhancement
Mode Field Effect Transistor
KDS8928A
Features
N-Channel
5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V
RDS(ON) = 0.038 @ VGS =2.5V
P-Channel
-4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V
RDS(ON) = 0.070 @ VGS =-2.5V
High density cell design for extremely low RDS(ON).
High power and handling capability in a widely
used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
N-Channel
P- Channel
Unit
V
VDSS
VGS
30
8
30
-8
Gate to Source Voltage
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
5.5
20
-4
A
ID
-20
A
2
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
PD
W
1.6
1
PD
W
0.9
(Note 1c)
-55 to 150
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
TJ, TSTG
78
40
R
R
JA
JC
/W
/W
Thermal Resistance Junction to Case
(Note 1)
1
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SMD Type
Transistors
KDS8928A
Electrical Characteristics Ta = 25
Testconditons
VGS = 0 V, ID = 250
VGS = 0 V, ID = -250
Parameter
Symbol
BVDSS
Min
30
Typ
Max Unit
V
N-Ch
P-Ch
N-Ch
A
Drain-Source Breakdown Voltage
-20
A
32
ID = 250 A, Referenced to 25
Breakdown Voltage Temperature
Coefficient
mV/
P-Ch
-23
ID = -250 A, Referenced to 25
VDS = 24V, VGS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
1
Zero Gate Voltage Drain Current
Gate-Body Leakage
IDSS
IGSS
A
VDS = -16 V, VGS = 0 V
VGS = 8V, VDS = 0 V
VGS = 8 V, VDS = 0 V
-1
100
nA
100
0.4
0.67
-0.6
-3
VDS = VGS, ID = 250
VDS = VGS, ID = -250
A
Gate Threshold Voltage
VGS(th)
V
-0.4
A
ID = 250 A, Referenced to 25
Gate Threshold Voltage Temperature
Coefficient
mV/
P-Ch
N-Ch
4
ID = -250 A, Referenced to 25
VGS = 4.5 V, ID =5.5A
VGS = 2.5 V, ID = 4.5A
VGS = -4.5 V, ID =-4 A
VGS = -2.5 V, ID =-3.4 A
VGS = 4.5 V, VDS = 5V
VGS = -4.5 V, VDS = -5V
VDS = 5V, ID = 5.5A
0.025 0.03
0.031 0.038
0.043 0.055
.059 0.072
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
RDS(on)
RDS(on)
ID(on)
gFS
m
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
20
A
-20
20
13
S
VDS = -5V, ID = -4A
900
1130
410
480
110
120
N-Channel
Ciss
pF
pF
pF
ns
ns
ns
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Coss
Crss
P-Channel
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
Reverse Transfer Capacitance
Turn-On Delay Time
6
8
12
16
N-Channel
td(on)
VDD = 6 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 (Note 2)
19
23
42
260
13
31
Turn-On Rise Time
tr
37
67
P-Channel
Turn-Off Delay Time
td(off)
VDD = -10 V, ID = -1 A,
360
24
VGS = -4.5 V, RGEN = 6 (Note 2)
Turn-Off Fall Time
tf
ns
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
90
19.8
20
125
28
N-Channel
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
nC
nC
nC
VDS =10V,ID=5.5A,VGS=4.5V(Note 2)
28
2
2.8
6.3
3.2
P-Channel
VDS=-5V,ID=-4A,VGS=-5V(Note 2)
2
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SMD Type
Transistors
KDS8928A
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
IS
Min
Typ
Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
1.3
A
-1.3
Maximum Continuous Drain-Source
Diode Forward Current
VGS = 0 V, IS = 1.3A (Not 2)
VGS = 0 V, IS = -1.3A (Not 2)
0.68
-0.7
1.2
V
-1.2
Drain-Source Diode Forward Voltage
VSD
3
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