KDS9952A [TYSEMI]
N-Channel 3.7A, 30V, RDS(ON)=0.08W P-Channel -2.9A, -30V, RDS(ON)=0.13W; N通道3.7A ， 30V ， RDS （ ON） = 0.08W P沟道-2.9A ， -30V ， RDS （ ON ） = 0.13W
| 型号： | KDS9952A |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-Channel 3.7A, 30V, RDS(ON)=0.08W P-Channel -2.9A, -30V, RDS(ON)=0.13W |
| 文件： | 总3页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
KDS9952A
Features
N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
N-Channel
P-Channel
Unit
V
VDSS
VGS
30
20
3.7
15
-30
20
Gate to Source Voltage
V
Drain Current Continuous
Drain Current Pulsed
(Note 1a)
A
2.9
10
ID
A
2
Power Dissipation for Dual Operation
PD
1.6
1
Power Dissipation for Single Operation (Note 1a)
W
PD
(Note 1b)
(Note 1c)
0.9
-55 to 150
Operating and Storage Temperature
TJ, TSTG
40
78
Thermal Resistance Junction to Case
(Note 1)
R
R
JC
JA
/W
/W
Thermal Resistance Junction to Ambient (Note 1a)
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Product specification
KDS9952A
Electrical Characteristics Ta = 25
Parameter
Symbol
BVDSS
Testconditons
VGS = 0 V, ID = 250
Type
N-Ch
P-Ch
Min
30
Typ
Max
Unit
V
A
Drain–Source Breakdown Voltage
-30
VGS = 0 V, ID = -250
A
VDS = 24 V, VGS = 0 V
2
N-Ch
P-Ch
25
VDS = 24 V, VGS = 0 V,TJ = 55
VDS = -24 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
A
-2
-25
100
-100
2.8
2.2
-2.8
VDS = -24 V, VGS = 0 V,TJ = 55
VGS = 20 V, VDS = 0 V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
IGSSF
IGSSR
ALL
ALL
nA
nA
VGS = -20 V, VDS = 0 V
1
1.7
1.2
VDS = VGS, ID = 250
VDS = VGS, ID = 250 A,TJ = 125
VDS = VGS, ID = -250
A
N-Ch
P-Ch
0.7
-1
Gate Threshold Voltage
VGS(th)
V
-1.6
A
-0.85 -1.25 -2.5
0.06 0.08
0.08 0.13
0.08 0.11
0.11 0.18
0.11 0.13
0.15 0.21
VDS = VGS, ID = -250 A,TJ = 125
VGS = 10 V, ID = 1.0 A
VGS = 10 V, ID = 1.0 A,TJ = 125
VGS = 4.5 V, ID = 0.5 A
N-Ch
P-Ch
VGS = 4.5 V, ID = 0.5 A,TJ = 125
VGS =-10 V, ID =-1.0 A
Static Drain-Source On-Resistance
RDS(on)
VGS =-10 V, ID =-1.0 A,TJ = 125
VGS = -4.5 V, ID =- 0.5 A
VGS = -4.5 V, ID =- 0.5 A,TJ = 125
VGS = 10 V, VDS = 5 V
0.17
0.2
0.24 0.32
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
15
On–State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
A
VGS = -10 V, VDS = -5 V
-10
VDS = 15 V, ID = 3.7 A
6
gFS
S
VDS = -15 V, ID = -2.9 A
4
N-Channel
320
350
225
260
85
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
P-Channel
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
Reverse Transfer Capacitance
Turn-On Delay Time
100
N-Channel
10
9
15
40
20
40
50
90
50
VDD = 10 V, ID = 1 A
13
21
21
21
5
VGS = 10 V, RGEN = 6
(Note 2)
(Note 2)
Turn-On Rise Time
P-Channel
Turn-Off Delay Time
td(off)
VDD = -10 V, ID = -1 A
VGS = -10 V, RGEN = 6
Turn-Off Fall Time
tf
ns
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
8
50
27
25
N-Channel
9.5
10
Total Gate Charge
Qg
nC
nC
VDS = 10 V, ID = 3.7 A,VGS = 10 V
1.5
1.6
3.3
Gate–Source Charge
Qgs
P-Channel
VDS = -10 V, ID = -2.9 A,VGS = -10 V
Gate–Drain Charge
Qgd
nC
P-Ch
3.4
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Product specification
KDS9952A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
Typ
Max
1.2
Unit
A
Maximum Continuous Drain-Source
Diode Forward Current
IS
VSD
trr
-1.2
1.3
VGS = 0 V, IS = 1.25 A (Note 2)
VGS = 0 V, IS =-1.25 A (Note 2)
VGS=0 V, IF=1.25 A,dIF/dt=100A/
VGS=0 V, IF=-1.25 A,dIF/dt=100A/
0.8
Drain-Source Diode Forward
Voltage
V
-0.8
-1.3
75
s
Reverse Recovery Time
ns
100
s
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