KI5473DC [KEXIN]
P-Channel 12-V (D-S) MOSFET; P通道12 -V (D -S )的MOSFET型号: | KI5473DC |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | P-Channel 12-V (D-S) MOSFET |
文件: | 总2页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
IC
P-Channel 12-V (D-S) MOSFET
KI5473DC
Features
TrenchFET Power MOSFETS
Low rDS(on) and Excellent Power Handling In
Compact Footprint
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
5 secs
Steady State
-12
Unit
V
Gate-Source Voltage
8
VGS
-8.1
-5.9
-4.3
TA = 25
ID
Continuous Drain Current (TJ = 150 ) *
-5.9
TA = 85
A
Pulsed Drain Current
20
IDM
IS
Continuous Source Current *
-2.1
2.5
1.3
-1.1
1.3
0.7
TA = 25
TA = 85
Maximum Power Dissipation *
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
-55 to 150
260
TJ, Tstg
Symbol
RthJA
Typ
40
Max
50
Unit
/W
t
5 sec
Maximum Junction-to-Ambient*
Steady-State
Steady-State
80
95
Maximum Junction-to-Foot (Drain)
RthJF
15
20
* Surface Mounted on 1" X 1' FR4 Board.
1
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SMD Type
IC
KI5473DC
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Testconditons
VDS = VGS, ID = -250
Min
Typ
Max
-1.0
100
-1
Unit
V
-0.40
A
nA
A
VDS = 0 V, VGS = 8 V
VDS = -9.6V, VGS = 0 V
VDS = -9.6V, VGS = 0 V, TJ = 85
VDS - 5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -5.9A
VGS = -2.5 V, ID = -5.3A
VGS = -1.8 V, ID = -2.2A
VDS = -5V, ID = -5.9A
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
-5
A
ID(on)
-20
A
0.022
0.027
Drain-Source On-State Resistance*
rDS(on)
0.028 0.0335
0.036
20
0.045
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
IS = -1.1 A, VGS = 0 V
-0.8
21
-1.2
32
V
nC
nC
nC
ns
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = -6V, VGS = -4.5 V, ID = -5.9 A
3.1
6.0
25
Turn-On Delay Time
Rise Time
40
75
50
VDD = -6 V, RL = 6
Turn-Off Delay Time
Fall Time
td(off)
tf
145
90
220
135
105
ID = -1 A, VGEN = -4.5V, RG = 6
Source-Drain Reverse Recovery Time
trr
70
IF = -1.1 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2%.
2
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