KI5473DC [KEXIN]

P-Channel 12-V (D-S) MOSFET; P通道12 -V (D -S )的MOSFET
KI5473DC
型号: KI5473DC
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

P-Channel 12-V (D-S) MOSFET
P通道12 -V (D -S )的MOSFET

文件: 总2页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Type  
IC  
P-Channel 12-V (D-S) MOSFET  
KI5473DC  
Features  
TrenchFET Power MOSFETS  
Low rDS(on) and Excellent Power Handling In  
Compact Footprint  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 secs  
Steady State  
-12  
Unit  
V
Gate-Source Voltage  
8
VGS  
-8.1  
-5.9  
-4.3  
TA = 25  
ID  
Continuous Drain Current (TJ = 150 ) *  
-5.9  
TA = 85  
A
Pulsed Drain Current  
20  
IDM  
IS  
Continuous Source Current *  
-2.1  
2.5  
1.3  
-1.1  
1.3  
0.7  
TA = 25  
TA = 85  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Parameter  
-55 to 150  
260  
TJ, Tstg  
Symbol  
RthJA  
Typ  
40  
Max  
50  
Unit  
/W  
t
5 sec  
Maximum Junction-to-Ambient*  
Steady-State  
Steady-State  
80  
95  
Maximum Junction-to-Foot (Drain)  
RthJF  
15  
20  
* Surface Mounted on 1" X 1' FR4 Board.  
1
www.kexin.com.cn  
SMD Type  
IC  
KI5473DC  
Electrical Characteristics Ta = 25  
Parameter  
Gate Threshold Voltage  
Gate-Body Leakage  
Symbol  
VGS(th)  
IGSS  
Testconditons  
VDS = VGS, ID = -250  
Min  
Typ  
Max  
-1.0  
100  
-1  
Unit  
V
-0.40  
A
nA  
A
VDS = 0 V, VGS = 8 V  
VDS = -9.6V, VGS = 0 V  
VDS = -9.6V, VGS = 0 V, TJ = 85  
VDS - 5 V, VGS = -4.5 V  
VGS = -4.5 V, ID = -5.9A  
VGS = -2.5 V, ID = -5.3A  
VGS = -1.8 V, ID = -2.2A  
VDS = -5V, ID = -5.9A  
Zero Gate Voltage Drain Current  
On-State Drain Current*  
IDSS  
-5  
A
ID(on)  
-20  
A
0.022  
0.027  
Drain-Source On-State Resistance*  
rDS(on)  
0.028 0.0335  
0.036  
20  
0.045  
Forward Transconductance*  
Schottky Diode Forward Voltage*  
Total Gate Charge  
gfs  
VSD  
Qg  
S
IS = -1.1 A, VGS = 0 V  
-0.8  
21  
-1.2  
32  
V
nC  
nC  
nC  
ns  
ns  
ns  
ns  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
td(on)  
tr  
VDS = -6V, VGS = -4.5 V, ID = -5.9 A  
3.1  
6.0  
25  
Turn-On Delay Time  
Rise Time  
40  
75  
50  
VDD = -6 V, RL = 6  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
145  
90  
220  
135  
105  
ID = -1 A, VGEN = -4.5V, RG = 6  
Source-Drain Reverse Recovery Time  
trr  
70  
IF = -1.1 A, di/dt = 100 A/  
s
* Pulse test; pulse width  
300 s, duty cycle  
2%.  
2
www.kexin.com.cn  

相关型号:

KI5504DC

Complementary 30-V (D-S) MOSFET
KEXIN

KI5504DC

Drain-Source Voltage Vds 30 Gate-Source Voltage Vgs -20V
TYSEMI

KI5513DC

Complementary 20-V (D-S) MOSFET
KEXIN

KI5513DC

Drain-Source Voltage Vds 20 V Gate-Source Voltage Vgs -12V
TYSEMI

KI5515DC

Complementary 20-V (D-S) MOSFET
KEXIN

KI5515DC

TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint
TYSEMI

KI5902DC

Dual N-Channel 30-V (D-S) MOSFET
KEXIN

KI5902DC

Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
TYSEMI

KI5903DC

Dual P-Channel 2.5-V (G-S) MOSFET
KEXIN

KI5903DC

Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
TYSEMI

KI5904DC

Dual N-Channel 2.5-V (G-S) MOSFET
KEXIN

KI5904DC

Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
TYSEMI