KMBT2907 [KEXIN]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | KMBT2907 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP General Purpose Amplifier
KMBT2907
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
3
● Collector Current to Continuous :IC=-600mA
● Power Dissipation :PD=250mW
1
2
+0.1
+0.05
0.95-0.1
0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
V
Collector-Base Voltage
VCBO
-60
-40
-5
Collector-Emitter Voltage
VCEO
VEBO
IC
V
V
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
-600
mA
mW
℃/ W
℃
PD
250
500
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
RθJA
TJ, Tstg
-55 to +150
1
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SMD Type
Transistors
KMBT2907
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
-60
-40
-5
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Base Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IB
IC = -10 μA, IE = 0
IC = -10 mA, IB = 0
IE = -10μA, IC = 0
VEB = -0.5 V
V
V
-50
-50
-20
-20
nA
nA
nA
μA
Collector Cutoff Current
ICEX
VCE = -30 V
VCB = -50 V, IE = 0
Collector Cutoff Current
ICBO
VCB = -50 V, IE = 0, TA = 150℃
IC = -0.1 mA, VCE = -10 V
IC = -1.0 mA, VCE = -10 V
35
50
DC Current Gain
hFE
IC = -10 mA, VCE = -10 V
75
IC = -150 mA, VCE = -10 V
IC = -500 mA, VCE = -10 V
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -50 mA, VCE = -20 V,f = 100 MHz
VCB = -10 V, IE = 0,f = 100 kHz
VEB = -2.0 V, IC = 0,f = 100 kHz
100
30
300
-0.4
-1.6
-1.3
-2.6
V
V
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
V
V
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Turn-on Time
fT
Cobo
Cibo
ton
td
200
MHz
pF
pF
ns
ns
ns
ns
ns
ns
8.0
30
45
VCC = -30 V, IC = -150 mA,IB1 = -15 mA
Delay Time
10
Rise Time
tr
40
Turn-off Time
toff
ts
100
80
VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15
mA
Storage Time
Fall Time
tf
30
■ Marking
Marking
W2F
2
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SMD Type
Transistors
KMBT2907
Typical Electrical Characteristics
0.5
0.4
500
400
300
b=10
V
=5V
CE
125 C
25 C
0.3
0.2
25 C
200
100
0
125 C
0.1
0
-40 C
-40 C
0.1
0.3
1
3
10
30
100
300
1
10
100
500
IC COLLECTOR CURRENT(mA)
IC COLLECTOR CURRENT(mA)
FIG.2 Collector-Emitter Saturation
Voltage vs collector Current
FIG.1 Typical Pulsed Current Gain
vs Collector Current
1
1
0.8
0.6
-40 C
25 C
-40 C
0.8
25 C
0.6
0.4
0.2
0
125 C
125 C
0.4
0.2
0
b=10
V
=5V
CE
1
10
100
500
0.1
1
10
25
Ic-COLLECTOR CURRENT (mA)
Ic-COLLECTOR CURRENT (mA)
FIG.4 Base Emitter ON Voltage
vs Collector Current
FIG.3 Base-Emitter Saturation Voltage
vs Collector Current
100
10
20
V
=35V
CB
16
12
1
C
ib
8
4
0
0.1
C
ob
0.01
25
50
75
100
125
-0.1
-1
-10
-50
TA- AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
FIG.5 Collector-Cutoff Current
vs. Ambient Temperature
FIG.6 Input and Output Capacitance
vs Reverse Bias Voltage
3
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