KO3419 [KEXIN]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | KO3419 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
P-Channel Enhancement Mode
Field Effect Transistor
KO3419(AO3419)
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
Features
VDS (V) = -20V
ID = -3.5 A
+0.1
-0.1
3
RDS(ON)
RDS(ON)
RDS(ON)
75m (VGS = -10V)
1
2
95m (VGS = -4.5V)
145m (VGS = -2.5V)
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
-20
Unit
V
Gate-Source Voltage
VGS
V
12
-3.5
Continuous Drain TA=25
ID
A
-2.8
Current *1
TA=70
Pulsed Drain Current *2
IDM
PD
-15
1.4
Power Dissipation *1 TA=25
TA=70
W
0.9
Thermal Resistance.Junction-to-Ambient
Thermal Resistance.Junction-to-Case
Junction and Storage Temperature Range
R
R
JA
JC
125
/W
/W
60
TJ, TSTG
-55 to 150
*1The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
1
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SMD Type
MOSFET
KO3419(AO3419)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-20
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
VDSS
ID=250 A, VGS=0V
VDS=-16V, VGS=0V
-0.5
-2.5
1
Zero Gate Voltage Drain Current
IDSS
A
VDS=-16V, VGS=0V ,TJ=55
VDS=0V, VGS= 10V
Gate-Body leakage current
Gate Threshold Voltage
IGSS
A
V
VGS(th)
-0.7
-0.9
59
-1.4
75
VDS=VGS ID=-250
A
VGS=-10V, ID=-3.5A
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-3.5A
83
105
95
TJ=125
Static Drain-Source On-Resistance
RDS(ON)
m
76
111
145
On state drain current
ID(ON)
gFS
Ciss
Coss
Crss
Rg
-15
A
Forward Transconductance
Input Capacitance
6.8
512
77
S
620
pF
pF
pF
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
62
9.2
5.5
0.8
1.9
5
13
Total Gate Charge
Qg
6.6
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
VGS=-4.5V, VDS=- =-10V, ID=-3.5A
Gate Source Charge
Qgs
Qgd
tD(on)
tr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
6.7
28
VGS=-10V, VDS=-10V, RL=2.8 ,RGEN=3
Turn-0ff DelayTime
tD(off)
tf
Turn-Off Fall Time
13.5
9.8
2.7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
trr
IF=-3.5A, dI/dt=100A/µs
IF=-3.5A, dI/dt=100A/µs
12
-2
Qrr
IS
VSD
IS=-1A,VGS=0V
-0.65 -0.81 -0.95
V
2
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