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KQB3N40 [KEXIN]

400V N-Channel MOSFET; 400V N沟道MOSFET
KQB3N40
型号: KQB3N40
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

400V N-Channel MOSFET
400V N沟道MOSFET

文件: 总2页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

KQB4N50

500V N-Channel MOSFET

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17 KEXIN

KQB4N50

3.4A, 500 V. RDS(ON) = 2.7 VGS = 10 V Low gate charge (typical 10nC) Fast switching

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15 TYSEMI

KQB4P40

400V P-Channel MOSFET

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14 KEXIN

KQB5N20

200V N-Channel MOSFET

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3 KEXIN

KQB5N20

4.5A, 200 V. RDS(ON) = 1.2 VGS = 10 V Low gate charge (typical 6.0nC)

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14 TYSEMI

KQB5N60

600V N-Channel MOSFET

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9 KEXIN

KQB5N60

5.0A, 600 V. RDS(ON) = 2.0 VGS = 10 V Low gate charge (typical 16nC)

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11 TYSEMI

KQB630

200V N-Channel MOSFET

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9 KEXIN

KQB630

9A, 200 V. RDS(ON) = 0.4 VGS = 10 V Low gate charge (typical 19nC)

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7 TYSEMI

KQB6N25

250V N-Channel MOSFET

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9 KEXIN

KQB6N25

5.5A, 500 V. RDS(ON) = 1 VGS = 10 V Low gate charge (typical 6.6nC)

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15 TYSEMI

KQB6N70

700V N-Channel MOSFET

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8 KEXIN

KQB6N70

6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)

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10 TYSEMI

KQB9N50

500V N-Channel MOSFET

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13 KEXIN

KQB9N50

9A, 500 V. RDS(ON) = 0.73 VGS = 10 V Low gate charge (typical 28nC)

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8 TYSEMI

KQC0402T

high current inductor

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17 KOA

KQC0402TBK3N0C

General Purpose Inductor, 0.003uH, 6.667%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, ROHS COMPLIANT

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2 KOA

KQC0402TBK3N9C

General Purpose Inductor, 0.0039uH, 5.129%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, ROHS COMPLIANT

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0 KOA

KQC0402TBK4N3C

General Purpose Inductor, 0.0043uH, 4.652%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, ROHS COMPLIANT

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0 KOA

KQC0402TBK4N7C

General Purpose Inductor, 0.0047uH, 4.256%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, ROHS COMPLIANT

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2 KOA